Pinched Hysteresis Loop with Nonlinear Electronic Components: From Memristor to Hysteristor Concepts
Journal of Electrical and Computer EngineeringA memristor is an electrical two-terminal passive device that exhibits a pinched hysteresis loop that always passes through the origin in the voltage-current plane.
Leonardo Barboni
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Pinched hysteresis behavior in a PID-controlled resistor
Engineering Science and Technology, an International Journal, 2018 A current-controlled grounded resistor that exhibits a frequency-dependent pinched hysteresis loop is described. A mathematical model describing this behavior is derived and validated numerically, which has the form of a Proportional Integral-Derivative (
M.A. Carrasco-Aguilar +2 more
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Pinched hysteresis loop in defect-free ferroelectric materials
Physical Review B, 2016 In addition to the single polarization-versus-electric field hysteresis loop that is characteristic of ferroelectrics and the double hysteresis loop that is known to occur in antiferroelectrics, a third kind of polarization-versus-electric field function has been reported in several systems.
Bin Xu +2 more
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Heat Transport Hysteresis Generated Through Frequency Switching of a Time-Dependent Temperature Gradient [PDF]
EntropyA stochastic energetics framework is applied to examine how periodically shifting the frequency of a time-dependent oscillating temperature gradient affects heat transport in a nanoscale molecular model. We specifically examine the effects that frequency
Renai Chen, Galen T. Craven
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Analytical Computation of the Area of Pinched Hysteresis Loops of Ideal Mem-Elements
Radioengineering, 2013 The memory elements, memristor being the best known of them, driven by a periodical waveform exhibit the well-known pinched hysteresis loops. The hysteresis is caused by a memory effect which results in a nonzero area closed within the loop.
Z. Biolek, D. Biolek, V. Biolkova
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Scaling behavior of different shapes of hysteresis loops and recoverable energy storage density in Na0.5Bi0.5TiO3, K0.5Bi0.5TiO3, and Na0.25K0.25Bi0.5TiO3 ferroelectrics [PDF]
Journal of Materiomics, 2022 In this work, the dependency of the polarization (P) - electric field (E) loop area A of lead free ferroelectrics Na0.5Bi0.5TiO3 (NBT), K0.5Bi0.5TiO3 (KBT), and Na0.25K0.25Bi0.5TiO3 (NKBT) on the amplitude (E0) of the electric field is studied.
Krishnarjun Banerjee, Saket Asthana
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Modelling Hysteresis with Memristors [PDF]
AnalectaIn the realm of electronics, the foundational passive components—resistors, inductors, and capacitors—are well-established. However, in 1971, Leon Chua introduced a theoretical fourth element, the memristor, identified by its
Sándor Csikós +2 more
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PLoS ONE, 2019 In non-linear measurements, the applied stimulus itself affects the electrical properties of the underlying tissue. If corresponding voltage-current plots exhibit pinched hysteresis loops with pinched point in the origin of coordinates, the tissue can be
Oliver Pabst, Ørjan Grøttem Martinsen
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Extended Higher-Order Elements with Frequency-Doubled Parameters: The Hysteresis Loops Are Always of Type II [PDF]
Sensors, 2023 Current MEMS (Micro Electro Mechanical Systems) can be modeled by state-dependent elements that exhibit hysteretic behavior. Examples include capacitors and inductors whose capacitances and inductances are dependent on the instantaneous state of the ...
Zdeněk Biolek +3 more
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Piecewise Linear and Nonlinear Window Functions for Modelling of Nanostructured Memristor Device [PDF]
Журнал нано- та електронної фізики, 2015 The present paper reports two new window functions viz. piecewise linear window function and nonlinear window function for modelling of the nanostructured memristor device.
T.D. Dongale +7 more
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