Results 221 to 230 of about 17,268 (255)

Plasma-chemical reactor with low ion energy for selective etching

2000 10th International Crimean Microwave Conference. "Microwave and Telecommunication Technology". Conference Proceedings (IEEE Cat. No.00EX415), 2000
The results of physical and technological tests of the modernized plasma-chemical reactor are presented. The chemically active ion's energy may be controlled by the magnetic field intensity in the range from 15 eV to 100 eV. (If it is necessary the ion energy may be increased up to 300 eV). The current density is /spl les/l5 mA/cm/sup -2/.
V.V. Ustalov, O.A. Fedorovich, A.A. Vdovenkov, S.K. Levitskaja   +3 more
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Analysis of a Pulsed‐Plasma Chemical Vapor Deposition Reactor with Recycle

Journal of The Electrochemical Society, 1990
A simplified model for a time‐dependent plasma‐assisted chemical vapor deposition reactor was developed based on transport and reaction principles. The model equations were solved by the method of lines using collocation on finite elements for the spatial discretization. Emphasis was placed on the deposition rate and uniformity as a function of reactor
Sang‐Kyu Park, Demetre J. Economou
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Plasma chemical reactor for precision etching of elements with submicron size

IEEE Conference Record - Abstracts. 1997 IEEE International Conference on Plasma Science, 2002
Summary form only given, as follows. We have created a plasma chemical reactor with the possibility of ion energy control from 50 W up to 500 W and more. In the main working regime the ion energy is regulated in the range 50-150 W. It is shown the etching velocity of Al films is /spl nu//sub et//spl les/0.5 /spl mu/m/min at the anisotropy coefficient q>
V.N. Pavlenko, V.G. Panchenko
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Heat exchange in a plasma chemical reactor with multijet mixing chamber

Journal of Engineering Physics, 1985
The article presents the results of the investigation of the heat exchange in a multijet plasma chemical reactor in dependence on the hydrodynamic conditions and design dimensions of the conical mixing chamber.
B. A. Belov, N. S. Sal'nikova, A. L. Suris   +2 more
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Characterization of a new reactor for remote plasma chemical vapor deposition

Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 1989
A remote plasma metalorganic chemical vapor deposition (CVD) system was designed, constructed, and characterized mathematically and experimentally. The system uses a new unique reactor geometry which is particularly well suited to remote plasma CVD. GaAs was grown in the system with and without a rf plasma and the results compared for various electrode
Alan D. Huelsman, R. Reif
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Effect of RF discharge structure on etching rate in plasma-chemical reactor

2010 IEEE Region 8 International Conference on Computational Technologies in Electrical and Electronics Engineering (SIBIRCON), 2010
The effect of RF discharge structure on silicon etching process in CF 4 /O 2 mixture was studied. The calculations were carried out based on an advanced mathematical model of plasma-chemical reactor with taking into account a peculiarities of RF discharge plasma.
Yurii Grigoryev, Aleksey Gorobchuk
openaire   +1 more source

The investigation of an electric arc in a plasma chemical reactor for hazardous waste treatment

Journal of Chemical Technology & Biotechnology, 2019
AbstractBACKGROUNDResearch was performed to reveal the main peculiarities of an operating electric arc in a plasma chemical reactor (PChR) for hazardous waste processing. The experimental study was performed in a model of PChR using thermal plasma as a heat source. Investigations described are conducted to study the voltage–current characteristics (VCC)
Valincius, Vitas, Kėželis, Romualdas, Gimžauskaitė, Dovilė, Grigaitienė, Viktorija, Valatkevičius, Pranas   +4 more
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The Interaction of the Supersonic Plasma‐Jet with the Substrate in the RF Plasma‐Chemical Reactor

Contributions to Plasma Physics, 1996
AbstractAlthough the plasma‐chemical processes and properties of the deposited thin film can strongly depend on the interaction of the supersonic plasma jet channel with the substrate, up to now the study of this phenomenon has not yet been done. We decided to study this interaction by means of CCD camera.
M. Šícha, Z. Hubička, M. Tichý, M. Novák, L. Soukup, L. Jastrabík, J. F. Behnke, V. Kapička, K. Kapoun, M. Šerý   +9 more
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Analysis of hydrogen plasma in a microwave plasma chemical vapor deposition reactor

Journal of Applied Physics, 2016
The aim of this work is to build a numerical model of hydrogen plasma inside a microwave plasma chemical vapor deposition system. This model will help in understanding and optimizing the conditions for the growth of carbon nanostructures. A 2D axisymmetric model of the system is implemented using the finite element high frequency Maxwell solver and the
G. Shivkumar, S. S. Tholeti, M. A. Alrefae, T. S. Fisher, A. A. Alexeenko   +4 more
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Experimental research of ICP reactor for plasma-chemical etching

2015
The results of systematic experimental researches of plasma-chemical etching reactor in the inductive mode are presented in this paper. Measurements of the integral discharge parameters (inductor voltage, gas pressure, input power) have been carried out as well as probe measurements of spatial distribution of local plasma parameters (plasma density ...
Dudin, S.V., Zykov, A.V., Dahov, A.N., Farenik, V.I.   +3 more
openaire   +1 more source