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Hybrid plasma chemical reactors for bio-polymers processing

Journal of Physics D: Applied Physics, 2019
Abstract Design of a hybrid plasma-chemical reactor in which strongly non-equilibrium low-temperature plasma is generated by joint action of a continuous electron beam and RF-gas discharge on gaseous media at moderate pressures (0.1–10 Torr) is described.
Michael Vasiliev   +2 more
openaire   +1 more source

On the feasibility of a plasma-chemical reactor for hydrogen production

Technical Physics, 2003
It is proposed that a high-frequency discharge in humid air be used as a model of a plasma-chemical reactor for hydrogen production.
openaire   +1 more source

Multiphysics Multi-Model Simulation of Large-Area Plasma Chemical Reactors

Volume 2: 29th Computers and Information in Engineering Conference, Parts A and B, 2009
Facing an ever-growing demand for large-area solar cells and flat-panel displays, the industry strives to produce larger, cheaper and better performing thin films. Computer simulation has proved to be a reliable and cost-efficient way to optimize existing technologies, to develop and test new ideas.
Krzhizhanovskaya, V.   +3 more
openaire   +2 more sources

Plasma-chemical reactor with low ion energy for selective etching

2000 10th International Crimean Microwave Conference. "Microwave and Telecommunication Technology". Conference Proceedings (IEEE Cat. No.00EX415), 2000
The results of physical and technological tests of the modernized plasma-chemical reactor are presented. The chemically active ion's energy may be controlled by the magnetic field intensity in the range from 15 eV to 100 eV. (If it is necessary the ion energy may be increased up to 300 eV). The current density is /spl les/l5 mA/cm/sup -2/.
V.V. Ustalov   +3 more
openaire   +1 more source

Analysis of a Pulsed‐Plasma Chemical Vapor Deposition Reactor with Recycle

Journal of The Electrochemical Society, 1990
A simplified model for a time‐dependent plasma‐assisted chemical vapor deposition reactor was developed based on transport and reaction principles. The model equations were solved by the method of lines using collocation on finite elements for the spatial discretization. Emphasis was placed on the deposition rate and uniformity as a function of reactor
Sang‐Kyu Park, Demetre J. Economou
openaire   +1 more source

Plasma chemical reactor for precision etching of elements with submicron size

IEEE Conference Record - Abstracts. 1997 IEEE International Conference on Plasma Science, 2002
Summary form only given, as follows. We have created a plasma chemical reactor with the possibility of ion energy control from 50 W up to 500 W and more. In the main working regime the ion energy is regulated in the range 50-150 W. It is shown the etching velocity of Al films is /spl nu//sub et//spl les/0.5 /spl mu/m/min at the anisotropy coefficient q>
V.N. Pavlenko, V.G. Panchenko
openaire   +1 more source

Heat exchange in a plasma chemical reactor with multijet mixing chamber

Journal of Engineering Physics, 1985
The article presents the results of the investigation of the heat exchange in a multijet plasma chemical reactor in dependence on the hydrodynamic conditions and design dimensions of the conical mixing chamber.
B. A. Belov   +2 more
openaire   +1 more source

Characterization of a new reactor for remote plasma chemical vapor deposition

Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 1989
A remote plasma metalorganic chemical vapor deposition (CVD) system was designed, constructed, and characterized mathematically and experimentally. The system uses a new unique reactor geometry which is particularly well suited to remote plasma CVD. GaAs was grown in the system with and without a rf plasma and the results compared for various electrode
Alan D. Huelsman, R. Reif
openaire   +1 more source

Effect of RF discharge structure on etching rate in plasma-chemical reactor

2010 IEEE Region 8 International Conference on Computational Technologies in Electrical and Electronics Engineering (SIBIRCON), 2010
The effect of RF discharge structure on silicon etching process in CF 4 /O 2 mixture was studied. The calculations were carried out based on an advanced mathematical model of plasma-chemical reactor with taking into account a peculiarities of RF discharge plasma.
Yurii Grigoryev, Aleksey Gorobchuk
openaire   +1 more source

The investigation of an electric arc in a plasma chemical reactor for hazardous waste treatment

Journal of Chemical Technology & Biotechnology, 2019
AbstractBACKGROUNDResearch was performed to reveal the main peculiarities of an operating electric arc in a plasma chemical reactor (PChR) for hazardous waste processing. The experimental study was performed in a model of PChR using thermal plasma as a heat source. Investigations described are conducted to study the voltage–current characteristics (VCC)
Valincius, Vitas   +4 more
openaire   +1 more source

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