Results 261 to 270 of about 92,867 (295)

Effect of RF discharge structure on etching rate in plasma-chemical reactor

2010 IEEE Region 8 International Conference on Computational Technologies in Electrical and Electronics Engineering (SIBIRCON), 2010
The effect of RF discharge structure on silicon etching process in CF 4 /O 2 mixture was studied. The calculations were carried out based on an advanced mathematical model of plasma-chemical reactor with taking into account a peculiarities of RF discharge plasma.
Yurii Grigoryev, Aleksey Gorobchuk
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Analysis of hydrogen plasma in a microwave plasma chemical vapor deposition reactor

Journal of Applied Physics, 2016
The aim of this work is to build a numerical model of hydrogen plasma inside a microwave plasma chemical vapor deposition system. This model will help in understanding and optimizing the conditions for the growth of carbon nanostructures. A 2D axisymmetric model of the system is implemented using the finite element high frequency Maxwell solver and the
G. Shivkumar, S. S. Tholeti, M. A. Alrefae, T. S. Fisher, A. A. Alexeenko   +4 more
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Plasma chemical reactor for precision etching of elements with submicron size

IEEE Conference Record - Abstracts. 1997 IEEE International Conference on Plasma Science, 2002
Summary form only given, as follows. We have created a plasma chemical reactor with the possibility of ion energy control from 50 W up to 500 W and more. In the main working regime the ion energy is regulated in the range 50-150 W. It is shown the etching velocity of Al films is /spl nu//sub et//spl les/0.5 /spl mu/m/min at the anisotropy coefficient q>
V.N. Pavlenko, V.G. Panchenko
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Synthesis of silicon carbide nanopowders in a two-jet plasma-chemical reactor

Thermophysics and Aeromechanics, 2017
Results of experimental studies on production of nanostructured silicon carbide powders in a plasma-chemical reactor based on a two-jet plasmatorch are presented. The conditions of SiC formation as a function of temperature and composition of the initial components are determined by thermodynamic calculations.
A. S. Anshakov, E. K. Urbakh, A. E. Urbakh, V. A. Faleev, V. S. Cherednichenko   +4 more
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Numerical modeling of two RF discharge structure in plasma-chemical etching reactor

2013 International Siberian Conference on Control and Communications (SIBCON), 2013
The plasma-chemical etching technology in RF discharge was simulated in hydrodynamical approach. The calculations based on the mathematical model of plasma-chemical reactor in which gas flow was described by the convective-diffusion equations of multicomponent physical-chemical hydrodynamics.
Yurii N. Grigoryev, Aleksey G. Gorobchuk
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Investigations of fullerenes and their derivatives synthesized in the plasma chemical reactor

AIP Conference Proceedings, 1998
The x-ray investigations of products of synthesis and the results of investigations of iron-containing compounds of fullerene obtained in a plasma chemical reactor (PCR), and medical-biological investigations of water-soluble fullerene-iron-acetylacetone complexes are presented.
S. G. Ovchinnikov, G. N. Churilov, L. A. Solovyov, E. A. Petrakovskaya, Ya. N. Churilova, O. V. Chupina, Ya. Koretz, N. V. Bulina, Ya. I. Pouhova, A. A. Savchenko, V. V. Fefelova   +10 more
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Effect of HF discharge structure on etch nonuniformity in plasma-chemical reactor

Russian Microelectronics, 2014
Numeric simulation is used to study the effect of the high-frequency (HF) discharge structure on the process of plasma-chemical etching of silicon in a mixture of CF4/O2. The calculations are carried out using a mathematical model of a nonisothermal reactor, in which the gas mixture motion was described with the help of equations of multicomponent ...
Yu. N. Grigor’ev, A. G. Gorobchuk
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On the feasibility of a plasma-chemical reactor for hydrogen production

Technical Physics, 2003
It is proposed that a high-frequency discharge in humid air be used as a model of a plasma-chemical reactor for hydrogen production.
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Optimization of the Length of the Active Zone of a Plasma Chemical Reactor

Theoretical Foundations of Chemical Engineering, 2003
The optimum length of the active zone of a plasma chemical reactor is calculated using a semiempirical approach in terms of a mathematical model of coupled physicochemical and thermophysical processes in the reactor.
V. K. Semenov, S. L. Troshin, D. V. Meshalkin   +2 more
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Behavior of downstream plasmas generated in a microwave plasma chemical-vapor deposition reactor

Journal of Applied Physics, 1988
The behavior of electron-cyclotron resonant (ECR) and non-ECR H2 plasmas generated in a microwave plasma chemical-vapor deposition reactor have been studied as a function of magnetic field strength and absorbed microwave power. Plasma diagnostics were performed with a planar electrostatic probe, microwave power measurements, and visual inspection.
P. K. Shufflebotham, D. J. Thomson, H. C. Card   +2 more
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