Results 201 to 210 of about 78,217 (266)

Picosecond time-resolved infra-red spectroscopic study of a water-soluble cationic copper-porphyrin with nucleic acids.

Phys Chem Chem Phys
Keane PM, Graczyk D, Sazanovich IV, Towrie M, Quinn SJ, Kelly JM.   +5 more
europepmc   +1 more source

Heterocoagulation of Inorganic Pigments for Solvent-Based Recycling of Polystyrene. [PDF]

ChemSusChem
Carrieri E, Ügdüler S, Lampaert O, Hoogenboom R, De Meester S.   +4 more
europepmc   +1 more source

Regenerative bone-targeted nanoparticles modulate osteoclast function.

Nanoscale Horiz
Rangasami VK, Moore CJ, Xiao B, Benoit DSW.   +3 more
europepmc   +1 more source

Some of the next articles are maybe not open access.

Related searches:

Modeling of a-Si/poly-Si and a-Si/poly-Si/poly-Si stacked solar cells

Solar Energy Materials and Solar Cells, 2003
Abstract A computer model for the poly-Si thin film-related solar cells is established, with which the solar cells with the structure of single junction poly-Si cell, a-Si/poly-Si tandem cell and a-Si/poly-Si/poly-Si triple cell are simulated. The results indicate that the practical structure for poly-Si-related solar cell is a-Si/poly-Si/poly-Si ...
X.H. Geng, J.M. Xue, H.C. Ge, H.B. Li, Z.P. Wang, Q.Z. Wang, H.Z. Ren   +6 more
openaire   +1 more source

A Low Temperature Poly‐Si TFT with a SMC Poly‐Si Crystallized at 420 °C

SID Symposium Digest of Technical Papers, 1999
Abstract Amorphous silicon (a‐Si) was crystallized by silicide mediated crystallization (SMC) using a very thin metal layer on a‐Si. Such structure can be crystallized by annealing for 30 min at 420 °C in the presence of an electric field of 100 V/cm.
Y. J. Choi, W. K. Kwak, S. J. Park, S. Y. Yoon, C. O. Kim, J. Jang   +5 more
openaire   +1 more source

Performance and reliability improvements in poly-Si TFT's by fluorine implantation into gate poly-Si

IEEE Transactions on Electron Devices, 1995
High-performance and high-reliability TFT's have been obtained using a fluorine ion implantation technique. The fluorine implantation into the gate poly-Si of TFT caused a positive Vth shift, increased the ON current, and decreased the leakage current significantly.
S. Maegawa, T. Ipposhi, S. Maeda, H. Nishimura, T. Ichiki, M. Ashida, O. Tanina, Y. Inoue, T. Nishimura, N. Tsubouchi   +9 more
openaire   +1 more source

Photocurrents in poly-Si TFTs

IEE Proceedings - Circuits, Devices and Systems, 1994
Steady-state photocurrents have been measured in poly-Si TFTs fabricated from columnar poly-Si as well as from material crystallised from amorphous LPCVD and PECVD precursors. With top face white light illumination, through the poly-Si gate, the photocurrents from all three technologies were comparable and showed similar trends of increasing ...
J.R. Ayres, S.D. Brotherton, I.R. Clarence, P.J. Dobson   +3 more
openaire   +1 more source

The optimization of poly-Si cells

Proceedings of 5th International Conference on Properties and Applications of Dielectric Materials, 2002
We investigated the optimization of poly-Si solar cell characteristics for various factors. The influencing factors were investigated in terms of emitter thickness, thermal treatment, surface treatment, grid design, and contact metal. First, we carried out solar cell simulation using a PC1D software package. Then poly-Si solar cells were fabricated and
S.S. Kim, D.G. Lim, H.W. Kim, J. Yi
openaire   +1 more source

Poly-Si-Based Physical Unclonable Functions

IEEE Transactions on Very Large Scale Integration (VLSI) Systems, 2017
Physically unclonable functions (PUFs) were introduced over a decade ago for a variety of security applications. Silicon PUFs exploit uncontrollable random variations from manufacturing to generate unique and random signatures/responses. However, such sources of randomness may become limited during standard CMOS manufacturing as processes continue to ...
Hao-Ting Shen, Fahim Rahman, Bicky Shakya, Xiaolin Xu 0001, Mark Tehranipoor, Domenic Forte   +5 more
openaire   +1 more source