Results 231 to 240 of about 78,217 (266)

Novel poly-Si/Al/sub 2/O/sub 3//poly-Si capacitor for high density DRAMs

1998 Symposium on VLSI Technology Digest of Technical Papers (Cat. No.98CH36216), 2002
A poly-Si/Al/sub 23//poly-Si capacitor is developed for the simple integration of 256 Mb DRAM and beyond. The oxide equivalent thickness (T/sub oxeq/) was achieved as small as 28 /spl Aring/, which corresponds to the capacitance of 26.8 fF/cell in 256 Mb DRAM with 0.26 /spl mu/m feature size. One of the distinguished characteristics of Al/sub 2/O/sub 3/
null Yeong Kwan Kim, null Sang Min Lee, null In Seen Park, null Chang Soo Park, null Sang In Lee, null Moon Yong Lee   +5 more
openaire   +1 more source

Superior Potential of Flash-Lamp-Crystallized Poly-Si Films for Application to Thin-Film Poly-Si Solar Cells

2009
24th European Photovoltaic Solar Energy Conference, 21-25 September 2009, Hamburg, Germany; 2510 ...
Ohdaira, K., Takemoto, H., Shiba, K., Nishikawa, T., Koyama, K., Matsumura, H.   +5 more
openaire   +1 more source

Effect of Copper on the Breakthrough Voltage of Poly-Si - Poly-Si Capacitors

Solid State Phenomena, 2001
M. Boehringer, J.E. Pillion, V. Erdmann, M. Rygula, K. Winz, P. Brauchle, D. Aquino, H. Zhang, Joseph Zahka, G. Zielonka, J. Hauber   +10 more
openaire   +1 more source

Improvement of Poly-Si TFT Characteristics by Hydrogenation at SiO2/Poly-Si Interfaces, Characterized by TDS Measurement of Deuterium Terminated Poly-Si

Extended Abstracts of the 1994 International Conference on Solid State Devices and Materials, 1994
K. Hamada, S. Saito, K. Sera, F. Okumura, F. Uesugi, I. Nishiyama   +5 more
openaire   +1 more source

Poly-Si TFT Technology and Architecture

2013
This chapter discusses the fabrication of high quality poly-Si films, by the industry standard technique of excimer laser crystallisation of a-Si:H precursor films. Alternative crystallisation procedures are also reviewed, including metal-induced solid phase crystallisation, as well as advanced procedures for achieving large grain and high mobility ...
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Study of forming a p+ poly-Si gate by inductively coupled nitrogen plasma nitridation of the stacked poly-Si layers

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, 2000
Formation of a p+ poly-Si gate by using the stacked poly-Si layers that are nitridized by using inductively coupled nitrogen plasma (ICNP) has been studied. The stacked poly-Si gate structure consists of three poly-Si layers with thickness of 50, 50, and 100 nm, respectively.
openaire   +1 more source

Roles of mRNA poly(A) tails in regulation of eukaryotic gene expression

Nature Reviews Molecular Cell Biology, 2021
Lori A Passmore, Jeff Coller, Passmore Lori A   +2 more
exaly  

The Reduction of Poly‐Si Dissolution and Contact Resistance at Al/n‐Poly‐Si Interfaces in Integrated Circuits

Journal of The Electrochemical Society, 1978
H. M. Naguib, L. H. Hobbs
openaire   +1 more source

Poly-Si TFT Drivers

2004
Byong-Deok Choi, Inhwan Lee, Oh-Kyong Kwon   +2 more
openaire   +1 more source

Monolithic Integration of Ni-SPC Poly-Si TFTs and Lateral Large-grained Poly-Si TFTs

Extended Abstracts of the 2010 International Conference on Solid State Devices and Materials, 2010
A. Hara, K. Kondo, T. Sato
openaire   +1 more source