Results 91 to 100 of about 721 (167)

Comprehensive Parametric Analysis of Silicon Solar Cell Performance Through Computational Modelling: A Comparative Study of Monocrystalline and Polycrystalline Devices Using MATLAB and Python

ITEGAM-JETIA
Accurate characterization of the diode ideality factor (n ) is fundamental to understanding recombination mechanisms and performance limitations in crystalline silicon solar cells.
Ravshanbek Rakhmatulaev, Maxfuza Alinazarova, Rayimjon Aliev, Murod Nosirov, Nosirbek Abdurazakov   +4 more
doaj   +1 more source

A Dual‐Programmable 2M NOR Flash Architecture for Energy‐Efficient In‐Memory Computing

Advanced Science, EarlyView.
In conventional NOR Flash, the access transistor occupies area but stores no information. Here, it is repurposed as a programmable second memory device that plays two functional roles: an analog memory element that lowers the minimum read current from 72.7 nA to 4.22 pA, and a current‐path gating element enabling true‐off pruning and current‐range ...
Suhan Kim, Donghyun Ryu, Hyoseob Kim, Sangwoo Jung, Min‐Hwi Kim   +4 more
wiley   +1 more source

Enhancing Quasi‐Two‐Dimensional Electronic Structure in Bi2O2Se via Chlorine Substitution

Advanced Science, EarlyView.
We demonstrate chlorine substitution as an effective strategy to transform Bi2O2Se into an exfoliatable van der Waals superlattice. Key electronic band feature, including indirect bandgap, effective mass is well preserved, while the 2D character of the system is sufficiently enhanced.
Yong‐Zhen Jiang, Qi‐Xun Wen, Xiang Xu, Su‐Tao Sun, Feng‐Fan Ren, Zi‐Xuan Zhou, Xing‐Yuan You, Yu‐Cheng Kan, Zheng Zhang, Jie‐Yi Liu, Yu‐Zhou Zhao, Zheng‐Tai Liu, Mao Ye, Shu‐Hua Yao, Jian Zhou, Yan‐Bin Chen, Zhong‐Kai Liu, Yu‐Lin Chen, Yang‐Yang Lv, Cheng Chen   +19 more
wiley   +1 more source

Robust and Compatible Ferroelectric Memories with Polycrystalline TiO2 Channel for 3D Integration

Advanced Electronic Materials, EarlyView.
Robust and monolithic 3D compatible ferroelectric memories are realized using the polycrystalline TiO2 channel‐based FeFET. The review covers physical mechanisms of the TiO2 channel FeFET, quantitative benchmarking, and advanced planar/vertical architectures for monolithic 3D integration based on HfO2‐TiO2 gate stack, offering a roadmap for reliable ...
Xujin Song, Chenxi Yu, Shangze Li, Dijiang Sun, Jiajia Zhang, Haotong Zhu, Xiaomin Xiao, Xionghao Qin, Xiaoyan Liu, Xing Zhang, Jinfeng Kang   +10 more
wiley   +1 more source

People Counting and Positioning Using Low‐Resolution Infrared Images for FeFET‐Based In‐Memory Computing

Advanced Electronic Materials, EarlyView.
In this work, low‐resolution infrared imaging is combined with a 28 nm FeFET IMC architecture to enable compact, energy‐efficient edge inference. MLC FeFET devices are experimentally characterized, and controlled multi‐level current accumulation is validated at crossbar array level.
Alptekin Vardar, Li Zhang, Alexander Rehmer, Marc Lupp, Subhashree Baskaran, Osama Abdelaal, Franz Müller, Nandakishor Yadav, Bing Li, Thomas Kämpfe   +9 more
wiley   +1 more source

Exploiting Temperature Effects for Robust Control and Reference Circuits Using Thin‐Film Contact‐Controlled Transistors

Advanced Electronic Materials, EarlyView.
Compact circuits based on contact‐controlled transistors are well‐suited to unsupervised thermal management, sensitive temperature measurement, or temperature‐stable current references. Demonstrated on flexible microcrystalline silicon and supported by simulation, the approach does not require supply voltage regulation, remains manufacturable across ...
Eva Bestelink, Jean‐Charles Fustec, Olivier de Sagazan, Rogier Fransen, George Bairaktatis, Emmanuel Jacques, Radu A. Sporea   +6 more
wiley   +1 more source

Integration of Redox‐Active Polyoxovanadate Clusters into PMMA: Structure, Nanoscale Organization and Multilevel Redox Switching

Advanced Electronic Materials, EarlyView.
Solvent‐processable polyoxovanadate–PMMA nanocomposites exhibit concentration‐dependent 2D and 3D organization on gold surfaces, while retaining multilevel redox switching at room temperature. These hybrids bridge nanoscale functionality and macroscopic measurement, establishing a versatile platform for hybrid molecular–polymer memory materials ...
Jonas Lorenz, Marco Moors, Tom Scherzer, Olesya Daikos, Jens Bauer, Andrea Prager, Jan Griebel, Yeji Lee, Vineeth Kumar Bandari, Thomas Blaudeck, Oliver G. Schmidt, Kirill Monakhov   +11 more
wiley   +1 more source

Indirect laser heating of polycrystalline silicon to obtain active elements of integrated circuits

Технологія та конструювання в електронній апаратурі, 2002
The paper shows that laser recrystallization of polycrystalline silicon films makes it possible to obtain high-quality single-crystal layers, which allows manufacturing functional integrated circuit elements, in particular Hall sensors, within them.
Z. A. Iskender-zade, F. D. Kasimov, S. A. Ismayilova   +2 more
doaj  

AI‐Assisted Ultrasensitive Biosensing using Metal‐Electrolyte‐Metal‐Insulator‐Silicon Structure Based on Oxygen‐Tunable Iridium Oxide Nanonets for Lysyl‐Oxidase‐Like‐2 Breast Cancer Detection

Advanced Electronic Materials, EarlyView.
An oxygen‐controlled iridium‐oxide (IrOx) nano‐net structure is developed to enhance the sensitivity of metal‐electrolyte‐metal‐insulator‐silicon (MEMIS) biosensors. Integrated with a deep learning model, this platform achieves a high accuracy of 94.8% for detecting the breast cancer biomarker LOXL2.
Chiao‐Fan Chiu, Pankaj Kumar, Long Nguyen Minh Le, Ping‐Hsuan Wu, Punnatorn Boonyoung, Shen Tingyang, Abhijit Aich, Yi‐Pin Chen, Shih‐Yin Huang, Siddheswar Maikap   +9 more
wiley   +1 more source

Impact of Rapid Thermal Annealing on the Structural and Piezoelectric Properties of AlN Thin Films

Advanced Electronic Materials, EarlyView.
Aluminum nitride (AlN) is a biocompatible piezoelectric material suitable for energy harvesting in MEMS resonators. Through rapid thermal annealing, a threshold for CMOS‐compatible processes is established. AlN improved its crystallinity and enhanced the piezoelectric coefficient by ∼160%. Devices show an improvement in the electromechanical properties
Laura Mazón‐Maldonado, Lucía Nieto Sierra, M. Pilar Villar Castro, Fernando Lloret‐Vieira, Isidoro Ruíz‐García, Des Gibson, Hadi Heidari, Carlos García Núñez   +7 more
wiley   +1 more source