Results 111 to 120 of about 20,095 (311)

Impact Mechanism of Spectral Differentiation on PV Performance and Optimization of PV Systems in Shaded Forest Environments

open access: yesSensors
The global low-carbon transition is driving the use of renewable energy for ecological monitoring. Traditional power supply for forest monitoring sensor equipment is constrained by high wired costs, frequent battery replacement, and the limitations of ...
Dongxiao Yang   +5 more
doaj   +1 more source

Hydrogen passivation of grain boundaries in silicon sheet material

open access: yes, 2022
The impact of hydrogen passivation by means of ion implantation has been studied. The surface recombination velocity dramatically increases due to the passivation and connot be restored.
Schindler, Roland, Pirzer, M.
core  

Grain Boundary‐Driven Lattice Dynamics in a Solid‐State Li‐Ion Conductor

open access: yesAdvanced Science, EarlyView.
Grain boundaries in Li3OCl${\rm Li}_3{\rm OCl}$ are shown to significantly alter its lattice dynamics and induce Li‐ion vibrational hardening and anion softening. These changes hinder ion transport while promoting electronic conductivity and instability.
Jack M. Hemingway   +3 more
wiley   +1 more source

Aluminum induced crystallization of strongly (111) oriented polycrystalline silicon thin film and nucleation analysis

open access: yes, 2010
A polycrystalline silicon thin film was fabricated on glass substrate by means of aluminum induced crystallization (AIC). Al and alpha-Si layers were deposited by magnetron sputtering respectively and annealed at 480A degrees C for 1 h to realize layer ...
Chen NF (Chen NuoFu)   +10 more
core  

Shear‐Induced Emergence of Aromatic Superlow‐Friction Interfaces in Amorphous Carbon: Triggering Chemical Impurities and Atomic‐Scale Mechanisms

open access: yesAdvanced Science, EarlyView.
High‐throughput quantum‐mechanical simulations reveal that amorphous carbon undergoes shear‐driven structural transformation into aromatic, graphene‐like interfaces. This mechanochemical process is governed by dopant chemistry: dopants with valency less than four promote the emergence of superlow‐friction amorphous graphene, whereas tetra‐valent ...
Takuya Kuwahara   +4 more
wiley   +1 more source

Structural properties of polycrystalline silicon films formed by pulsed rapid thermal processing

open access: yes, 2002
A novel pulsed rapid thermal processing (PRTP) method has been used for realizing solid-phese crystallization of amorphous silicon films prepared by plasma-enhanced chemical vapour deposit ion.
Diao HW   +8 more
core  

Flexoelectricity in Photoconversion: Fundamentals, Materials, and Outlooks

open access: yesAdvanced Science, EarlyView.
Mechanical bending of a flexible cantilever induces a strain gradient in the photoactive material. The resulting flexoelectric field couples with photovoltaic and photoconductive effects, modulating charge generation, separation, and collection. A comparative analysis of oxide perovskites, halide perovskites, and two‐dimensional materials is presented,
Xiang Huang, Feng Li, Rongkun Zheng
wiley   +1 more source

Europium-substituted cerium iron garnet thin films for silicon-integrated nonreciprocal photonic device applications

open access: yesAPL Materials
Optical nonreciprocal devices are key components in photonic integrated circuits. Cerium-doped yttrium iron garnet (Ce:YIG) has been widely studied for nonreciprocal photonic devices in the telecommunication wavelength range.
Yucong Yang   +11 more
doaj   +1 more source

Luminescent porous polycrystalline silicon film

open access: yes, 1995
This paper will present new growth mechanisms, nanostructures and photoluminescence results on porous polycrystalline silicon films. The possible explanations and models will also be proposed and discussed.
Han, P. G.   +5 more
core   +1 more source

Large‐Scale Growth of Self‐Poled Ferroelectric Rashba Semiconductor α‐GeTe(111) Thin Films: A Crucial Step Towards Future CMOS‐Compatible Ferroelectric Spintronic Devices

open access: yesAdvanced Science, EarlyView.
Ferroelectric Rashba semiconductors promise ultralow‐power devices but lack industry‐quality films. This work demonstrates CMOS‐compatible fabrication of high‐quality α‐GeTe(111) films via magnetron sputtering, enabled by a 5 nm Sb2Te3 seed layer. Structural and ferroelectric analyses show robust, switchable polarization comparable to MBE films, paving
Jules Lagrave   +14 more
wiley   +1 more source

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