Results 121 to 130 of about 20,095 (311)
LDMOS transistors on 150 mm silicon-on-polycrystalline-silicon carbide hybrid substrates
Silicon based RF and power devices need a substrate that conducts heat better than conventional SOI-substrates. Here, the silicon dioxide insulator and the silicon substrate as in a SOI-wafer, are replaced by silicon carbide (SiC) which has higher ...
Norström, Hans, +5 more
core
A low-temperature fabrication process of polycrystalline silicon-silicon p+-n junction diode
A new method has been developed to form a p+-n polycrystalline-crystalline junction at low temperature. The technique involves the use of an e-beam evaporated polycrystalline silicon-aluminum-polycrystalline silicon multilayer structure to obtain an Al ...
Wu, CMM +3 more
core +1 more source
Junction Physics and Architectural Paradigms in Optoelectronic Semiconductor Fibers
Optoelectronic fibers are emerging as a key platform for distributed sensing, energy harvesting, and optical communication in deformable systems. Their performance is fundamentally governed by junction formation under confined, dynamic processing conditions.
Hailiang Wang +4 more
wiley +1 more source
A physical model of the process of structure formation of a polycrystalline superhard material is presented with a bimodal structure based on diamond micro- and nanopowders after their preliminary modification by carbide-forming elements. Proposed model
Victor I. Zhornik +2 more
doaj
Includes abstract.Includes bibliographical references (leaves 94-109).Doped silicon nanoparticles with clean surfaces and which are suitable forelectronic applications, have successfully been produced.
Scriba, Manfred R
core
Grain Boundary Structures and Properties in Polycrystalline Silicon
The method of preparation of polycrystalline silicon can have a strong influence on the types and distributions of grain boundaries, and thereby influence the electrical properties of devices made from such materials.
T. Surek, Y.S. Tsuo, J.B. Milstein
core +1 more source
Multiferroic order parameters – polarization, magnetization, and ferroelastic strain – are positioned as dynamic design variables for batteries. Their mechanistic roles, practical tuning through fabrication and external fields, and ferroic‐resolved characterization routes are unified into a closed‐loop framework, revealing how coupled ferroic responses
Jiaqi Su +13 more
wiley +1 more source
This review examines perovskite‐based X‐ray detectors from a materials‐to‐medical‐images perspective. Recent progress in perovskite‐based X‐ray detectors is discussed with emphasis on their relevance to clinical imaging. The key barriers to clinical implementation are analyzed.
Sibin Wang +8 more
wiley +1 more source
Process Research On Polycrystalline Silicon Material (PROPSM)
Performance limiting mechanisms in polycrystalline silicon are investigated by fabricating a matrix of solar cells of various thicknesses from polycrystalline silicon wafers of several bulk resistivities. The analysis of the results for the entire matrix
Culik, J. S., Wohlgemuth, J. H.
core
Robust and Compatible Ferroelectric Memories with Polycrystalline TiO2 Channel for 3D Integration
Robust and monolithic 3D compatible ferroelectric memories are realized using the polycrystalline TiO2 channel‐based FeFET. The review covers physical mechanisms of the TiO2 channel FeFET, quantitative benchmarking, and advanced planar/vertical architectures for monolithic 3D integration based on HfO2‐TiO2 gate stack, offering a roadmap for reliable ...
Xujin Song +10 more
wiley +1 more source

