Results 131 to 140 of about 20,095 (311)

People Counting and Positioning Using Low‐Resolution Infrared Images for FeFET‐Based In‐Memory Computing

open access: yesAdvanced Electronic Materials, EarlyView.
In this work, low‐resolution infrared imaging is combined with a 28 nm FeFET IMC architecture to enable compact, energy‐efficient edge inference. MLC FeFET devices are experimentally characterized, and controlled multi‐level current accumulation is validated at crossbar array level.
Alptekin Vardar   +9 more
wiley   +1 more source

Silicon electro-optic modulator

open access: yes, 2012
Electronic redacted version excludes material for which permission has not been granted by the rights holderIn recent years, as on-chip data transmission has increased dramatically, much time and effort has been devoted to the development of compact ...
Dong, Fengqiao
core  

Mono- and Polycrystalline Silicon for Terahertz Intracenter Lasers

open access: yes, 2008
The performance of optically pumped terahertz silicon lasers with active media made from mono- and polycrystalline silicon doped by phosphorus has been investigated.
Hübers, Heinz-Wilhelm   +3 more
core   +1 more source

A Dual‐Memory Ferroelectric Transistor Emulating Synaptic Metaplasticity for High‐Speed Reservoir Computing

open access: yesAdvanced Electronic Materials, EarlyView.
A CMOS‐compatible ferroelectric transistor harnesses the interplay between stable gate polarization memory and volatile non‐quasi‐static channel charge dynamics to emulate how biological synapses regulate their own plasticity. This brain‐inspired dual‐memory mechanism, realized in a single device, enables a physical reservoir computer that solves ...
Yifan Wang   +8 more
wiley   +1 more source

Bridged-grain polycrystalline silicon thin-film transistors

open access: yes, 2013
We introduce a new structure for low-temperature polycrystalline silicon thin-film transistors (TFTs). This bridged-grain structure can reduce the threshold voltage and the subthreshold swing, increase the on-off ratio, and suppress leakage current and ...
Meng, Zhiguo   +5 more
core   +1 more source

Physics‐Based Compact Modeling of Advanced 3D Nanoscale Vertical NAND Flash Memory

open access: yesAdvanced Electronic Materials, EarlyView.
For advanced 3D NAND flash memory, a unified compact model for SPICE is proposed that spans from the intrinsic unit cell to the full string and captures the electrostatic coupling with adjacent inhibit strings. It can successfully predict read behavior, program/erase dynamics, and interactions between neighboring cells, reflecting array‐level behavior ...
Ilho Myeong, Seonho Shin, Ickhyun Song
wiley   +1 more source

Preparation of Polycrystalline Silicon by Metal-Induced Crystallization of Silicon–Carbon Powder

open access: yesCeramics
In this study, we successfully obtained crystalline silicon from silica powder using a metal-induced crystallization method. For this purpose, powders were first prepared from organosilicon compounds and finely dispersed aluminum particles, then their ...
Natalia Igorevna Cherkashina   +3 more
doaj   +1 more source

Thin film silicon nanowire photovoltaic devices produced with gold and tin catalysts

open access: yes, 2011
Silicon nanowires produced using pulsed plasma-enhanced chemical vapor deposition have been used as part of a thin film photovoltaic device. Nanowires of differing morphologies were produced by using both gold and tin thin films as a catalyst for growth.
Jennings, P., Parlevliet, D.
core  

Exploiting Temperature Effects for Robust Control and Reference Circuits Using Thin‐Film Contact‐Controlled Transistors

open access: yesAdvanced Electronic Materials, EarlyView.
Compact circuits based on contact‐controlled transistors are well‐suited to unsupervised thermal management, sensitive temperature measurement, or temperature‐stable current references. Demonstrated on flexible microcrystalline silicon and supported by simulation, the approach does not require supply voltage regulation, remains manufacturable across ...
Eva Bestelink   +6 more
wiley   +1 more source

Intrinsic Mechanical Parameters and their Characterization in Solid‐State Lithium Batteries

open access: yesAdvanced Energy Materials, Volume 15, Issue 11, March 18, 2025.
This review focuses on the intrinsic mechanical parameters and their associated characterization in solid‐state batteries. The physical significance of mechanics parameters is introduced with exhaustive classifications by elastic, plastic deformations and fracture in bulk, adhesion, friction at interfaces, and mechanical fatigue in cells ...
Shuai Hao   +5 more
wiley   +1 more source

Home - About - Disclaimer - Privacy