Results 71 to 80 of about 20,095 (311)

Annealing effect on grain boundary width of polycrystalline silicon for photovoltaic application

Revue des Énergies Renouvelables, 2018
Nowadays, LPCVD (Low Pressure Chemical Vapor Deposition) and highly doped polycrystalline silicon films have numerous applications in microelectronic component manufacturing technologies, integrated circuits and solar cells.
B. Zaidi, B. Hadjoudja, S. Belghit, B. Chouial, M. Mekhalfa   +4 more
doaj  

Characterization of Phosphoric Acid Doped N-type Silicon Thin Films Printed on ITO Coated PET Substrate

International Journal of Electrochemical Science, 2013
In this paper n-type polycrystalline silicon thin films deposited on ITO coated polyethylene terephthalate (PET) substrate by screen printing technique have been studied.
M.K.M. Ali, K. Ibrahim, E.M. Mkawi, A. Salhin   +3 more
doaj   +1 more source

THE OXIDATION-KINETICS OF THIN POLYCRYSTALLINE SILICON FILMS

, 1991
The oxidation dynamics and morphology of undoped and heavily phosphorus-doped polycrystalline silicon films oxidized at a wide temperature and time range in dry and wet O2 atmosphere have been investigated.
WANG YY BEIJING UNIVINST MICROELECTRBEIJINGPEOPLES R CHINA, WANG YY, JIANG T, FENG SQ, SHEN T, ZHANG AZ, SUN TJ   +6 more
core  

A Unified Polymer Hydrogel Electrolyte Integrating Robust Adhesion, Self‐Healing, and Oxygen Permeability in Flexible Neutral Zn‐Air Batteries

Advanced Materials, EarlyView.
Flexible neutral Zn‐air batteries achieving a remarkable 3000‐cycle lifespan and withstanding 1000 bending cycles are reported. This performance is realized by employing a 3D physically cross‐linked neutral hydrogel electrolyte that integrates high adhesion, self‐healing, O2 permeability, and CO2 tolerance to resolve critical stability challenges ...
Zhenyu Sun, Kaiming Liao, Wei Zhou, Zongping Shao   +3 more
wiley   +1 more source

Thermal behavior of parasitic resistances of polycrystalline silicon solar cells

Revue des Énergies Renouvelables, 2013
In this work, we investigate the influence of temperature on the series and shunt resistances of polycrystalline silicon solar cells and then to determine the specific expressions of both parasitic resistances as function of temperature.
S. Bensalem, M. Chegaar
doaj  

TFT Backplanes Doped by BF2 Ion for Improved Stability and AMOLED Display Quality

Advanced Electronic Materials
This study investigates the effects of various ion implantation processes on the electrical performance of flexible low‐temperature polycrystalline silicon (LTPS) thin‐film transistor (TFT) backplanes.
Ying Shen, Fa‐Hsyang Chen, Dongliang Yu, Xue Liu, Yinghai Ma, Xuyang Zhang, Feiyue Cheng, Xiujian Zhu, Xuecheng Zou   +8 more
doaj   +1 more source

Engineering electronic and plasmonic materials for novel photonic devices

, 2010
In the last decade well known materials such as metals and silicon have emerged as new materials for photonic applications leading to the growth of two important fields: plasmonics and silicon photonics.
Lagonigro, Laura
core  

Ferroelectric Dynamic‐Field‐Driven Nucleation and Growth Model for Predictive Materials‐To‐Circuit Co‐Design

Advanced Materials, EarlyView.
This study presents a compact dynamic‐field‐driven nucleation and growth (DFNG) model that captures ferroelectric switching behavior under arbitrary voltage waveforms. It enables extraction of time‐dependent domain wall velocity and growth dimensionality, which can then be extended to device‐level modeling.
Yi Liang, Soohyeon Kim, Tony Chiang, Megan K. Lenox, Ian Mercer, John J. Plombon, Jon‐Paul Maria, Jon F. Ihlefeld, Wenhao Sun, Wei Lu, John T. Heron   +10 more
wiley   +1 more source

Energy Band Alignment and Electro‐Optical Behavior of Nearly Unstrained Monolayer MoS2 Heterostructures With GaN

Advanced Materials Interfaces, EarlyView.
Large size (∼100 µm) monolayer MoS2 grown by LPI‐CVD on n‐GaN exhibit a high n‐type doping, very low strain, and a type‐I band alignment at MoS2/GaN interface. Photocurrent measurements under illumination with photon energies from ∼2 to ∼5 eV show superior electro‐optical performances of these MoS2/n‐GaN heterojunctions as compared to Ni/n‐GaN devices ...
Salvatore Ethan Panasci, Emanuela Schilirò, Giuseppe Greco, Patrick Fiorenza, Fabrizio Roccaforte, Fiorenza Esposito, Igor Píš, Federica Bondino, Antonino Madonia, Marco Cannas, Simonpietro Agnello, Luca Seravalli, Filippo Giannazzo   +12 more
wiley   +1 more source

TECHNOLOGIES FOR HETEROSTRUCTURES FORMATION OF TRANSDUCER

Известия высших учебных заведений. Поволжский регион:Технические науки, 2020
Background. The relevance of the work is due to the high heterogeneity of the elements and structures of modern microelectronic converters of physical quantities, designed to operate in a wide range of temperatures and radiation.
P. G. Mikhaylov, V. V. Smogunov, M. I. Vol'nikov   +2 more
doaj   +1 more source