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Thermal Conductivity of CdCr₂Se₄ Ferromagnet at Low Temperatures: Role of Grain Boundaries and Porosity. [PDF]

Langmuir
Hejtmánek J, Ahn KH, Jirák Z, Levinský P, Navrátil J, Al Bacha S, Guilmeau E, Knížek K.   +7 more
europepmc   +1 more source

A transparent multiband solar patch array antenna

, 2012
Yurduseven, Okan, Forbes, Ian, Johnston, David, Smith, Dave, Pearsall, Nicola   +4 more
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On the resistivity of polycrystalline silicon

Physica Status Solidi (a), 1983
Theoretical investigations of the influence of grain size (D) and doping density (NA), on the carrier concentration (p*) and effective resistivity (ϱ*) of polycrystalline silicon are made, considering the finite thickness (2t) of the grain boundary region and the dynamics of capture and release of carriers at the grain boundary trap-states. It is found
B. P. Tyagi, K. Sen
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Bioactivity of Polycrystalline Silicon Layers

Journal of Nanoscience and Nanotechnology, 2008
After oxygen, silicon is the second most abundant element in the environment and is present as an impurity in most materials. The widespread occurrence of siliceous biominerals as structural elements in lower plants and animals suggests that Si plays a role in the production and maintenance of connective tissue in higher organisms.
Pramatarova, L., Pecheva, E., Montgomery, P., Dimova-Malinovska, D., Petrov, T., Toth, A.L., Dimitrova, M.   +6 more
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Hydrogen migration in polycrystalline silicon

Physical Review B, 1996
Hydrogen migration in solid-state crystallized and low-pressure chemical-vapor-deposited (LPCVD) polycrystalline silicon (poly-Si) was investigated by deuterium diffusion experiments. The concentration profiles of deuterium, introduced into the poly-Si samples either from a remote D plasma or from a deuterated amorphous-silicon layer, were measured as ...
, Nickel, , Jackson, , Walker
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Xrd and Xtem Investigation of Polycrystalline Silicon Carbide on Polycrystalline Silicon

MRS Proceedings, 1996
AbstractAtmospheric pressure chemical vapor deposition (APCVD) was used to grow silicon carbide (SiC) on as-deposited and annealed polycrystalline silicon (polysilicon) films which were deposited on oxidized Si wafers. X-ray diffraction (XRD) reveals that SiC films grown on asdeposited polysilicon have a (110) orientation. XRD performed on as-deposited
S. Roy, C. A. Zorman, C. H. Wu, A. J. Fleischman, M. Mehregany   +4 more
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Texturing of polycrystalline silicon

Solar Energy Materials and Solar Cells, 1996
Abstract A wet isotropic etching technique (“tubs”) has been developed for texturing polycrystalline silicon solar cells. Reflection losses are reduced by using total internal reflection from a glass encapsulant layer. The texture developed shows excellent reflection results, equivalent to microgrooves or inverted pyramids on encapsulated single ...
M.J. Stocks, A.J. Carr, A.W. Blakers
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Recrystallization of polycrystalline silicon

Materials Science and Engineering, 1981
Optical metallography is used to investigate the recrystallization properties of polycrystalline semiconductor-grade silicon. It is found that polycrystalline silicon recrystallizes at 1380 C in relatively short times, provided that the prior deformation is greater than 30%.
C. Lall, S.B. Kulkarni, C.D. Graham, D.P. Pope   +3 more
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