Results 261 to 270 of about 20,095 (311)

Bioactive polycrystalline silicon

Advanced Materials, 1996
The bioactivity of a range of microstructured silicon materials should be assessed since it has been demonstrated that low porosity microporous silicon is “bioactive”. Work reported here shows that certain types of polycrystalline silicon are also bioactive, being corroded and exhibiting surface deposits of calcium phosphate (see Figure) when kept in ...
Leigh T. Canham, Chris L. Reeves, David O. King, Paul J. Branfield, Jim G. Crabb, Michael C. L. Ward   +5 more
openaire   +1 more source

Fracture of polycrystalline silicon

Materials Science and Engineering: A, 2003
Abstract The present work investigates the fracture behavior of polycrystalline silicon grown by chemical vapor deposition. The critical stress intensity factor, KIc, was measured using disk-shaped compact tension specimens with non-zero crack tip radii.
R.C Brodie, D.F Bahr
openaire   +1 more source

Downscaling Issues in Polycrystalline Silicon TFTs

ECS Meeting Abstracts, 2010
Abstract not Available.
Fortunato G, Cuscunà M, Gaucci P, Maiolo L, Mariucci L, Pecora A, Valletta A   +6 more
openaire   +4 more sources

Scratch Fracture of Polycrystalline Silicon Wafers

Journal of the American Ceramic Society, 2015
Fracture of silicon wafers is responsible for lower than desirable manufacturing yields in the photovoltaic industry. This study investigates the fracture response of polycrystalline silicon wafers under sliding contacts at different length scales, by means of macro and microscratch tests which simulate cutting processes.
Borrero-Lõpez, O., Vodenitcharova, T., Quadir, Md Zakaria, Hoffman, M.   +3 more
openaire   +4 more sources

Dissolution of polycrystalline silicon carbide in liquid silicon

Soviet Powder Metallurgy and Metal Ceramics, 1972
1. A study was made of the dissolution kinetics of polycrystalline silicon carbide in liquid silicon, and the rate constants of the dissolution process were determined. 2. The dissolution rate of silicon carbide in liquid silicon is mainly determined by the diffusion rate of carbon in the latter. 3. The diffusion coefficients
V. N. Eremenko, G. G. Gnesin, M. M. Churakov   +2 more
openaire   +1 more source

Hall mobility of polycrystalline silicon

Applied Physics Letters, 1980
Hall mobility of polycrystalline silicon was measured in the dark and under illuminated conditions. Grain boundary potential barriers present in the dark can be eliminated with light. When the barriers are removed, the mobility between 200 and 400 K is found to vary as T−2, which is the dependence observed in single crystals for the same order of ...
H. Paul Maruska, Amal K. Ghosh, Albert Rose, Tom Feng   +3 more
openaire   +1 more source

Triple junctions and elastic stability of polycrystalline silicon

Physical Review B, 2000
We studied the atomic structure of a multiple-twin triple junction in silicon, formed by the convergence of two (111) and one (221) symmetric-tilt grain boundaries. Molecular-dynamics simulations with the Stillinger-Weber potential and constant-traction border conditions were performed on several triple junction configurations, obtained by different ...
COSTANTINI S., ALIPPI P., COLOMBO, LUCIANO, CLERI F.   +3 more
openaire   +2 more sources

Polycrystalline silicon oxidation method improving surface roughness at the oxide/polycrystalline silicon interface

Applied Physics Letters, 1995
A polycrystalline silicon oxidation method, which considerably improves the surface roughness at the oxide/polycrystalline silicon interface, is presented. The surface roughness at the interface is observed by transmission electron microscopy and is also evaluated by atomic force microscopy after the oxide layer is removed using buffered HF acid.
Myung-Chul Jun, Yong-Sang Kim, Min-Koo Han, Jin-Won Kim, Ki-Bum Kim   +4 more
openaire   +1 more source

Suppression of boron transport out of p+ polycrystalline silicon at polycrystalline silicon dielectric interfaces

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, 1999
The transport of B atoms out of p+ polycrystalline silicon (poly-Si) gate electrodes through SiO2 gate oxides to the Si–SiO2 interface during dopant activation anneals degrades performance and reliability of hole-conducting (p-channel) field effect transistors.
Y. Wu, H. Niimi, H. Yang, G. Lucovsky, R. B. Fair   +4 more
openaire   +1 more source

Diffusion of Impurities in Polycrystalline Silicon

Journal of Applied Physics, 1972
The diffusion of electrically active impurities into polycrystalline silicon deposited by the thermal decomposition of silane has been studied. Both boron and phosphorus have been found to diffuse more rapidly into polycrystalline silicon than into single-crystal silicon.
T. I. Kamins, J. Manoliu, R. N. Tucker
openaire   +1 more source