Results 271 to 280 of about 20,095 (311)

Losses in polycrystalline silicon waveguides

Applied Physics Letters, 1996
The losses of polycrystalline silicon (polySi) waveguides clad by SiO2 are measured by the cutback technique. We report losses of 34 dB/cm at a wavelength of 1.55 μm in waveguides fabricated from chemical mechanical polished polySi deposited at 625 °C.
J. S. Foresi, M. R. Black, A. M. Agarwal, L. C. Kimerling   +3 more
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lithium doping of polycrystalline silicon

Applied Physics Letters, 1980
Electrolytic lithium doping of high-purity polycrystalline silicon samples has been shown to increase not only the material conductivity but also the minority-carrier lifetime.
G. L. Miller, W. A. Orr
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Oxidation of polycrystalline silicon carbide

Ceramics International, 1986
Abstract The oxidation of densified silicon carbide has been studied by micrography and infrared reflection spectrometry, in addition to gravimetric techniques and X-ray diffraction. Of particular interest was the relative oxidation resistance of varieties of the material treated in various ways.
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Picosecond Photoresponse in Polycrystalline Silicon

Ultrafast Electronics and Optoelectronics, 1997
Polycrystalline silicon films, deposited on fused silica substrates, have been implemented as fast-response-time photoconductive switches. The switches were illuminated with 800-nm, 100-fs optical pulses from a Ti:sapphire mode-locked laser, and the photoresponse was observed using both a 34-GHz sampling oscilloscope and a subpicosecond electro-optic ...
K. Green, M. Lindgren, C.-C. Wang, L. Fuller, T. Y. Hsiang, W. Seka, R. Sobolewski   +6 more
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Boron Diffusion in Polycrystalline Silicon

MRS Proceedings, 1986
ABSTRACTThe diffusion of boron in ion implanted LPCVD polycrystalline silicon is shown to be dominated by grain boundary diffusion at low and moderate concentrations. The diffusion coefficient is 2 to 3 orders of magnitude larger than its value in crystalline silicon.
Moustafa Y. Ghannam, Robert W. Dutton, Steven W. Novak   +2 more
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Phosphorus diffusion in polycrystalline silicon

Journal of Applied Physics, 1984
The diffusion of phosphorus in crystallized amorphous Si layers was studied with secondary-ion mass spectroscopy. A two-dimensional diffusion model is used to find effective grain (Dg) and grain-boundary (Dgb) diffusion coefficients. This simplified model leads to Dgb ≤ 10Dg, which is significantly lower than what has been deduced from conventional ...
D. L. Losee, J. P. Lavine, E. A. Trabka, S.-T. Lee, C. M. Jarman   +4 more
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On the electrical properties of polycrystalline diamond films on silicon

Diamond and Related Materials, 1995
Abstract The electrical behaviour of metal/diamond/silicon structures was investigated by current-voltage measurements as a function of temperature in the range 20–270 °C. The results were related to the morphology and composition of the diamond film by a nonlinear electrical model, taking into account both a temperature-independent conductance ...
G. De Cesare, S. Salvatori, R. Vincenzoni, P. Ascarelli, E. Cappelli, F. Pinzari, F. Galluzzi   +6 more
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Polycrystalline Silicon as a Mechanical Material

MRS Proceedings, 1990
In 1982, Kurt Petersen published “Silicon as a Mechanical Material” in the Proceedings of the IEEE. This thorough review article heightened focus on the advantages of utilizing the mechanical as well as electrical properties of single-crystal silicon. Processes for shaping single-crystal silicon based upon selective etching were shown in the article to
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On the mobility dip in polycrystalline silicon

Journal of Physics D: Applied Physics, 1983
Measured Hall mobility in polycrystalline silicon layers shows a minimum at a certain doping concentration. This is interpreted in terms of the decrease in conductivity rather than a decrease in inherent mobility in the grain boundary space charge-region. The inherent mobility is suggested to be about the same as in the surrounding neutral region.
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Ion Implantation into Polycrystalline Silicon

1975
Some aspects of cencentration profiles and annealing behaviors of boron implanted in the polycrystalline silicon films have been studied in comparison with that implanted in single crystalline silicon.
T. Hirao, T. Ohzone, S. Takayanagi, H. Hozumi   +3 more
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