Near-Infrared Spectral MEMS Gas Sensor for Multi-Component Food Gas Detection. [PDF]
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A High-Density 4H-SiC MOSFET Based on a Buried Field Limiting Ring with Low Q<sub>gd</sub> and R<sub>on</sub>. [PDF]
Cui W, Guo J, Xu H, Zhang DW.
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Hole-Selective SiN x and AlO x Tunnel Nanolayers for Improved Polysilicon Passivating Contacts. [PDF]
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Review of Research Advances in Gyroscopes' Structural Forms and Processing Technologies Viewed from Performance Indices. [PDF]
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Theoretical and experimental investigations of the CMOS compatible Pirani gauges with a temperature compensation model. [PDF]
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Novel 4H-SiC Double-Trench MOSFETs with Integrated Schottky Barrier and MOS-Channel Diodes for Enhanced Breakdown Voltage and Switching Characteristics. [PDF]
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ABSTRACTThree-dimensional integration offers a dramatic reduction in chip area required per bit and has long been a research objective. Three-dimensional integration with thin film transistors (TFTs) requires detailed parametric analysis with techniques such as Capacitance-Voltage (CV) Characterization.
John R. Lindsey, T. S. Kalkur
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Polysilicon angular microvibromotors
Journal of Microelectromechanical Systems, 1992Two types of LPCVD polysilicon angular microvibromotors were designed, fabricated, and successfully operated in air and in vacuum. Each utilizes an electrostatically driven lateral resonant structure (the converter) to actuate a circular microrotor by means of oblique mechanical impact.
A.P. Lee, A.P. Pisano
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