Results 91 to 100 of about 28,375 (268)
, 2004 with a single grain boundary (GB) present in the channel, is simu-lated using two–dimensional numerical simulation, which includes a model of deep trap states at GBs.
Mizuta, Hiroshi +9 more
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Characterization of Arsenic Implanted Epitaxially Aligned Polysilicon-on-Silicon Films
, 1987 Nonuniformities in the polysilicon-to-silicon interface and in the polysilicon structure are expected to produce a nonuniform diffusion front when arsenic is diffused from polysilicon during epitaxial alignment. Using transmission electron microscopy, we
R. F. W. Pease +3 more
core +1 more source
In Situ Plasma‐Grown Silicon‐Oxide for Polysilicon Passivating Contacts
Advanced Materials Interfaces, 2020 Large‐scale manufacturing of polysilicon‐based passivating contacts for high‐efficiency crystalline silicon (c‐Si) solar cells demands simple fabrication of thermally stable SiOx films with well controlled microstructure and nanoscale thickness to enable
Areej Alzahrani +6 more
doaj +1 more source
, 2013 This work aims at a deeper understanding of the energy loss phenomenon in polysilicon production reactors by the so-called Siemens process. Contributions to the energy consumption of the polysilicon deposition step are studied in this paper, focusing on ...
A. Ramos +4 more
semanticscholar +1 more source
A Low-Cost CMOS-MEMS Piezoresistive Accelerometer with Large Proof Mass
Sensors, 2011 This paper reports a low-cost, high-sensitivity CMOS-MEMS piezoresistive accelerometer with large proof mass. In the device fabricated using ON Semiconductor 0.5 μm CMOS technology, an inherent CMOS polysilicon thin film is utilized as the piezoresistive
Mohd Haris Md Khir, Hongwei Qu, Peng Qu
doaj +1 more source
Economics of polysilicon processes
, 1986 Techniques are being developed to provide lower cost polysilicon material for solar cells. Existing technology which normally provides semiconductor industry polysilicon material is undergoing changes and also being used to provide polysilicon material ...
Yaws, C. L., Chou, S. M., Li, K. Y.
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The world's polysilicon trade data
, 2018 The world's polysilicon trade data from 2006 to ...
Liu, J (via Mendeley Data)
core +1 more source
Thermal expansion of low-pressure chemical vapor deposition polysilicon films [PDF]
, 2020 Polysilicon films were deposited using low-pressure chemical vapor deposition (LPCVD) onto oxidized silicon substrates, after which substrate curvature as a function of temperature was measured.
H Kahn, R Ballarini, A H Heuer
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Tekhnologiya i Konstruirovanie v Elektronnoi Apparature, 2014 The paper presents the study results of electrical properties of polycrystalline silicon films in silicon-on-insulator structures and Si whiskers in the temperature range of 4.2 – 70 K obtained by impedance measurements in the frequency range from 10 Hz ...
A. A. Druzhinin +3 more
doaj +1 more source
AIP Conference Proceedings, 2009 Polysilicon fuses are micron sized components of silicon chips. Unlike conventional fuses, they are blown as an irreversible programming step. They are used to isolate circuitry, to tune performance or to specialise the device. A fuse must be blown by applying a precise voltage which currently can only be determined by lengthly experimentation.
William Lee +7 more
openaire +1 more source