Results 71 to 80 of about 11,162 (212)

Elements of solid state electronics based on soi-structures and si whiskers for cryogenic temperatures

Tekhnologiya i Konstruirovanie v Elektronnoi Apparature, 2014
The paper presents the study results of electrical properties of polycrystalline silicon films in silicon-on-insulator structures and Si whiskers in the temperature range of 4.2 – 70 K obtained by impedance measurements in the frequency range from 10 Hz ...
A. A. Druzhinin, I. P. Osrovskkii, Yu. M. Khoverko, R. N. Koretskyy   +3 more
doaj   +1 more source

Improved off-current and subthreshold slope in aggressively scaled poly-Si TFTs with a single grain boundary in the channel

, 2004
with a single grain boundary (GB) present in the channel, is simu-lated using two–dimensional numerical simulation, which includes a model of deep trap states at GBs.
Mizuta, Hiroshi, Furuta, Y., Uno, S., Yoshikazu Furuta, Philip M. Walker, Walker, P., Hasko, D., Hiroshi Mizuta, Shigeyasu Uno, David G. Hasko   +9 more
core  

A Polysilicon Tft Parameter Extractor

, 1998
The achievement of large size displays and the capability of high throughput low temperature laser re-crystallised polysilicon TFTs to provide complex circuitry has opened up new market opportunities, such as the “system on panel” architecture, where the
S.W.B. Tam, P. Migliorato, O.K.B. Lui
core   +1 more source

Through-wafer polysilicon interconnect fabrication with in-situ boron doping

, 2005
Bulk micromachining technology can be used to produce conducting through-wafer polysilicon interconnects, i.e., polysilicon via plugs. This paper presents the process fabrication steps of polysilicon via plugs with in-situ boron doped polysilicon ...
Henttinen, Kimmo, Luusua, Ismo, Hannu Luoto, Luoto, Hannu, Tapani Vehmas, Pekko, Panu, Vehmas, Tapani, Ismo Luusua, Kimmo Henttinen, Panu Pekko   +9 more
core   +1 more source

A robust polysilicon-assisted SCR in ESD protection application

, 2007
A novel polysilicon-assisted silicon-controlled rectifier (SCR) is presented and analyzed in this paper, which is fabricated in HHNEC\u27s 0.18 mu m EEPROM process. The polysilicon-assisted SCRs take advantage of polysilicon layer to help by pass electro-
Dong, Shu Rong, Liou, Juin Jie, Cui, Qiang, Han, Yan   +3 more
core   +2 more sources

Photoplastic NEMS with an Encapsulated Polysilicon Piezoresistor

, 2008
We demonstrate a photoplastic NEMS device that has an encapsulated polysilicon piezoresistor. The crucial temperature limitation of depositing a polysilicon film on a polymer was overcome by employing a novel Hotwire CVD process. In this paper, we report
Sudip Nag, Nitin S. Kale, NAG, S, Rao, V. R., KALE, NS, V. Ramgopal Rao, R. Pinto, RAMGOPAL RAO, V, Pinto, R., PINTO, RICHARD, Kale, N. S., Nag, S.   +11 more
core   +1 more source

Stress and resistivity controls on in situ boron doped LPCVD polysilicon films for high-Q MEMS applications

, 2009
The simultaneous control of residual stress and resistivity of polysilicon thin films by adjusting the deposition parameters and annealing conditions is studied. In situ boron doped polysilicon thin films deposited at 520 ℃ by low pressure chemical vapor
Xie Jing, Tang Longjuan, Liu Yunfei, Yang Fuhua, Yang Jinling   +4 more
core  

Dopant Diffusion‐Induced Dielectric Breakdown: Stacked Dielectric Reliability on Heavily Doped Polysilicon

Advanced Electronic Materials
This study identifies a novel failure mode in silicon dioxide/silicon nitride (SiO₂/Si₃N₄) capacitors caused by dopant diffusion in heavily doped polysilicon substrates.
Shuo Wang, Zebin Kong, Jie Zhao, Shukai Guan, Ranran Zhao, Anan Ju, Kunshu Wang, Pengfei Lian   +7 more
doaj   +1 more source

The world's polysilicon trade data

, 2018
The world's polysilicon trade data from 2006 to ...
Liu, J (via Mendeley Data)
core   +1 more source

The adsorptive-kinetic model of in-situ phosphorus doped film polysilicon deposition process [PDF]

Tekhnologiya i Konstruirovanie v Elektronnoi Apparature, 2009
The investigation of deposition kinetics of in-situ phosphorus doped polysilicon films has been performed. The adsorptive-kinetic model of in-situ phosphorus doped polysilicon deposition has been developed.
Nalivaiko O. Yu., Turtsevich A. S.
doaj   +2 more sources