Results 81 to 90 of about 11,162 (212)

Selective formation of tungsten nanowires

open access: yesNanoscale Research Letters, 2011
We report on a process for fabricating self-aligned tungsten (W) nanowires with polycrystalline silicon core. Tungsten nanowires as thin as 10 nm were formed by utilizing polysilicon sidewall transfer technology followed by selective deposition of ...
Bien Daniel   +3 more
doaj  

Mechanical characterization of polysilicon cantilevers using a thermo-mechanical test chip fabricated with a combined bulk/surface micromachining technique

open access: yesResults in Physics, 2014
In this work a simplified low-frequency resonant method for the measurement of Young’s modulus of polysilicon cantilevers is described. We used a test chip, specially designed for characterizing thermal and mechanical properties, and fabricated using a ...
F.J. Quiñones-N   +5 more
doaj   +1 more source

Characterization of Arsenic Implanted Epitaxially Aligned Polysilicon-on-Silicon Films

open access: yes, 1987
Nonuniformities in the polysilicon-to-silicon interface and in the polysilicon structure are expected to produce a nonuniform diffusion front when arsenic is diffused from polysilicon during epitaxial alignment. Using transmission electron microscopy, we
R. F. W. Pease   +3 more
core   +1 more source

Microstructure for Thermal Impedance Spectroscopy for Biofuel Composition Measurement

open access: yesProceedings, 2017
Thermal impedance spectroscopy has been investigated as a non-destructive technique to determine the composition of ternary mixtures of biofuels.
Bo Jiang   +4 more
doaj   +1 more source

Dual Entropy Source Physical Unclonable Functions of Reconfigurable Feedback Field‐Effect Transistors with Polycrystalline Silicon Channels

open access: yesAdvanced Intelligent Systems
Physically unclonable functions (PUFs) have emerged as candidates for compact hardware security. In this study, PUFs of reconfigurable feedback field‐effect transistors (R‐FBFETs) with polycrystalline silicon channels are designed for dual entropy ...
Taeho Park   +4 more
doaj   +1 more source

Leakage Current Mechanisms in SiGe HBTs Fabricated Using Selective and Nonselective Epitaxy

open access: yes, 2001
SiGe heterojunction bipolar transistors (HTBs) have been fabricated using selective epitaxy for the Si collector, followed in the same growth step by nonselective epitaxy for the p+ SiGe base and n-Si emitter cap.
Ashburn, Peter   +6 more
core   +1 more source

A day-ahead and intraday scheduling method for polysilicon industrial parks with wind power integration based on flexible hydrogen production coupling

open access: yesEnergy Informatics
The increasing penetration of renewable energy introduces significant uncertainty to the operation of energy-intensive industries. To address this challenge, we propose a multi-timescale scheduling model for wind power integration in polysilicon ...
Yulong Yang   +4 more
doaj   +1 more source

In-situ Boron-doped Low-stress LPCVD Polysilicon for Micromechanical Disk Resonator

open access: yes, 2008
Polycrystalline silicon (polysilicon) has been used as an important structural material for microelectro-mechnical systems (MEMS) because of its compatibility with standard integrated circuit (IC) processes.
Liu, YF, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.   +5 more
core  

Direct bonding of thick film polysilicon to glass substrates

open access: yes, 2006
In the fabrication of microelectromechanical system (MEMS) devices the encapsulation of sensors and actuators is often required. Moreover, polysilicon has proven to be an indispensable material in various applications in MEMS area. In this study, we have
Henttinen, Kimmo   +3 more
core   +1 more source

LPCVD polysilicon passivating contacts

open access: yes, 2016
-This paper presents progress by ECN and Tempress in developing and integrating processing of polysilicon passivating contacts aimed at use for low-cost industrial cell production.
Anker, J.   +10 more
core  

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