Results 81 to 90 of about 28,375 (268)
Electrical Characterization of Polysilicon-to-Silicon Interfaces
, 1987 The structural properties of the polysilicon-to-silicon interface affect the electrical characteristics of devices with polysilicon contacts. The current characteristics of advanced bipolar transistors with polysilicon base and emitter contacts are very ...
R. F. W. Pease +3 more
core +1 more source
, 2014 This work addresses heat losses in a CVD reactor for polysilicon production. Contributions to the energy consumption of the so-called Siemens process are evaluated, and a comprehensive model for heat loss is presented.
A. Ramos +5 more
semanticscholar +1 more source
Journal of the Society for Information Display, Volume 34, Issue 5, Page 343-350, May 2026.In this study, we developed a technique to supply hydrogen to InOx from the underlying PECVD‐SiON film. Our new technique improved crystallinity of H2‐gas free SP‐InOx to be comparable to that of SP‐IO:H and enabled successful fabrication of an FET exhibiting normally‐off characteristics with a short L of 3 µm and a high field‐effect mobility over 75 ...
Yukinori Shima +11 more
wiley +1 more source
A Polysilicon Tft Parameter Extractor
, 1998 The achievement of large size displays and the capability of high throughput low temperature laser re-crystallised polysilicon TFTs to provide complex circuitry has opened up new market opportunities, such as the “system on panel” architecture, where the
S.W.B. Tam, P. Migliorato, O.K.B. Lui
core +1 more source
Selective formation of tungsten nanowires
Nanoscale Research Letters, 2011 We report on a process for fabricating self-aligned tungsten (W) nanowires with polycrystalline silicon core. Tungsten nanowires as thin as 10 nm were formed by utilizing polysilicon sidewall transfer technology followed by selective deposition of ...
Bien Daniel +3 more
doaj
Low-loss polysilicon waveguides fabricated in an emulated high-volume electronics process.
Optics Express, 2012 We measure end-of-line polysilicon waveguide propagation losses of ~6-15 dB/cm across the telecommunication O-, E-, S-, C- and L-bands in a process representative of high-volume product integration.
J. Orcutt +6 more
semanticscholar +1 more source
High‐Frame‐Rate Display Using Short‐Channel‐Length Crystal IO FET on Backplane
Journal of the Society for Information Display, Volume 34, Issue 5, Page 327-334, May 2026.Even with a channel length of 1.5 μm, a transistor using crystal indium oxide (IO) in the active layer exhibited normally off characteristics and a mobility of 72.4 cm²/Vs. In a display using crystal IO FETs, the scan driver achieved 120 Hz driving (8K4K) with low power consumption.
Koji Kusunoki +13 more
wiley +1 more source
Experimental Study Of The Boron Redistribution In Two Series Of Bilayer Films Silicon-Based
Electrica, 2019 The present work focuses on the study two sets of films bilayers obtained by Low Pressure Chemical Vapor Deposition (LPCVD), for use as material to MOS gate structures (transistors, chemical sensor ISFET, etc.).
Ramdane MAHAMDI +3 more
doaj +2 more sources
Advanced Electronic Materials, Volume 12, Issue 7, 6 April 2026.Metal halide perovskite field‐effect transistors (PeFETs) offer great promise for flexible, low‐cost, and high‐performance due to their excellent charge carrier properties. However, challenges like ion migration, hysteresis, and instability limit their performance.
Georgios Chatzigiannakis +13 more
wiley +1 more source
Through-wafer polysilicon interconnect fabrication with in-situ boron doping
, 2005 Bulk micromachining technology can be used to produce conducting through-wafer polysilicon interconnects, i.e., polysilicon via plugs. This paper presents the process fabrication steps of polysilicon via plugs with in-situ boron doped polysilicon ...
Henttinen, Kimmo +9 more
core +1 more source