Results 101 to 110 of about 28,375 (268)

Stress and resistivity controls on in situ boron doped LPCVD polysilicon films for high-Q MEMS applications

, 2009
The simultaneous control of residual stress and resistivity of polysilicon thin films by adjusting the deposition parameters and annealing conditions is studied. In situ boron doped polysilicon thin films deposited at 520 ℃ by low pressure chemical vapor
Xie Jing, Tang Longjuan, Liu Yunfei, Yang Fuhua, Yang Jinling   +4 more
core  

Direct bonding of thick film polysilicon to glass substrates

, 2006
In the fabrication of microelectromechanical system (MEMS) devices the encapsulation of sensors and actuators is often required. Moreover, polysilicon has proven to be an indispensable material in various applications in MEMS area. In this study, we have
Henttinen, Kimmo, Kulawski, Martin, Luoto, Hannu, Suni, Tommi   +3 more
core   +1 more source

Dopant Diffusion‐Induced Dielectric Breakdown: Stacked Dielectric Reliability on Heavily Doped Polysilicon

Advanced Electronic Materials
This study identifies a novel failure mode in silicon dioxide/silicon nitride (SiO₂/Si₃N₄) capacitors caused by dopant diffusion in heavily doped polysilicon substrates.
Shuo Wang, Zebin Kong, Jie Zhao, Shukai Guan, Ranran Zhao, Anan Ju, Kunshu Wang, Pengfei Lian   +7 more
doaj   +1 more source

A day-ahead and intraday scheduling method for polysilicon industrial parks with wind power integration based on flexible hydrogen production coupling

Energy Informatics
The increasing penetration of renewable energy introduces significant uncertainty to the operation of energy-intensive industries. To address this challenge, we propose a multi-timescale scheduling model for wind power integration in polysilicon ...
Yulong Yang, Chunye Qu, Songnan Wang, Jianwu Cai, Yaodong Gong   +4 more
doaj   +1 more source

The adsorptive-kinetic model of in-situ phosphorus doped film polysilicon deposition process [PDF]

Tekhnologiya i Konstruirovanie v Elektronnoi Apparature, 2009
The investigation of deposition kinetics of in-situ phosphorus doped polysilicon films has been performed. The adsorptive-kinetic model of in-situ phosphorus doped polysilicon deposition has been developed.
Nalivaiko O. Yu., Turtsevich A. S.
doaj   +2 more sources

Mechanical characterization of polysilicon cantilevers using a thermo-mechanical test chip fabricated with a combined bulk/surface micromachining technique

Results in Physics, 2014
In this work a simplified low-frequency resonant method for the measurement of Young’s modulus of polysilicon cantilevers is described. We used a test chip, specially designed for characterizing thermal and mechanical properties, and fabricated using a ...
F.J. Quiñones-N, F.J. De la Hidalga-W, M. Moreno, J. Molina, C. Zúñiga, W. Calleja   +5 more
doaj   +1 more source

In-situ Boron-doped Low-stress LPCVD Polysilicon for Micromechanical Disk Resonator

, 2008
Polycrystalline silicon (polysilicon) has been used as an important structural material for microelectro-mechnical systems (MEMS) because of its compatibility with standard integrated circuit (IC) processes.
Liu, YF, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China., Liu, YF, Xie, J, Tang, LJ, Yang, JL, Yang, FH   +5 more
core  

Applications of Polysilicon Films in Microsensors and Microactuators

, 1987
This paper reviews the applications of polysilicon in microsensor technology and in the emerging field of microfabricated actuators. Polysilicon is an attractive material for thin-film strain gauges, and is also used to fabricate micromechanical ...
Roger T. Howe
core   +1 more source

Microstructure for Thermal Impedance Spectroscopy for Biofuel Composition Measurement

Proceedings, 2017
Thermal impedance spectroscopy has been investigated as a non-destructive technique to determine the composition of ternary mixtures of biofuels.
Bo Jiang, Mohammadamir Ghaderi, Andre Bossche, Jaco H. Visser, Reinoud F. Wolffenbuttel   +4 more
doaj   +1 more source

Nanosecond Thermal Processing of Polysilicon thin Films

, 1990
Significant improvement in properties of polysilicon thin films for VLSI applications was achieved using nanosecond thermal processing causing laser-induced melting followed byrecrystallization. Sheet resistance was reduced by as much as a factor of five
K. H. Weiner, Tom. W. Sigmon, A. M. McCarthy   +2 more
core   +1 more source