Results 111 to 120 of about 28,375 (268)

Polysilicon Emitter Fabrication and Modeling

, 1986
The research proposed for 1986 was to develop the technology for fabricating, measuring, and computer modeling the polysilicon emitter bipolar transistor.
Neudeck, G. W., Klaasen, W., Pak, J., Bagri, R., Gray, J. L., Egley, J.   +5 more
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Electrical properties of polysilicon nanowires for devices applications

, 2010
4 pagesInternational audiencePolysilicon nanowires are synthesized using the well known and low cost technique commonly used in microelectronic industry: the sidewall spacer formation technique.
Rogel, Régis, L. Pichon, Salaün, Anne-Claire, F. Demami, A.‐C. Salaün, Demami, Fouad, R. Rogel, Pichon, Laurent   +7 more
core   +1 more source

Low temperature hot-wire polysilicon waveguides

We fabricated and measured low loss polysilicon waveguides deposited using Hot-Wire Chemical Vapor Deposition (HWCVD) at 240 °C.
Tarazona, A., Chen, Xia, Chong, Harold M.H., Ben Masaud, Taha M., Reed, Graham T.   +4 more
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Deposition and Characteristics of Polysilicon Films for Integrated-Circuit Applications

, 1987
The deposition conditions used to form polysilicon layers are determined to a large extent by the geometry of the reactor used to deposit the films. The structure of the films and the electrical behavior of devices incorporating the polysilicon layers ...
Ted Kamins
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Dual Entropy Source Physical Unclonable Functions of Reconfigurable Feedback Field‐Effect Transistors with Polycrystalline Silicon Channels

Advanced Intelligent Systems
Physically unclonable functions (PUFs) have emerged as candidates for compact hardware security. In this study, PUFs of reconfigurable feedback field‐effect transistors (R‐FBFETs) with polycrystalline silicon channels are designed for dual entropy ...
Taeho Park, Yunwoo Shin, Hyojoo Heo, Kyoungah Cho, Sangsig Kim   +4 more
doaj   +1 more source

Characterization of Thermal Oxides of Laser Annealed Polysilicon

, 1981
We report an investigation of the effects of laser processing on the thermal oxides of polysilicon. LPCVD polysilicon, 500 nm thick, deposited on 500 nm thermal oxide of single crystal silicon was laser processed at various stages in the process sequence
D. Lloyd Crosthwait, Rajiv R. Shah, Robert Mays   +2 more
core   +1 more source

Selective Etching of Doped Polysilicon Layers

The implementation of p-type passivating contacts is a promising approach to reduce overall recombination in tunnel oxide passivating contact (TOPCon) or back-contact solar cells. Due to the high absorption coefficient in highly doped silicon layers, the
Kamphues, Joshua, Wolf, Andreas, Meßmer, Marius, Geml, Fabian, Neuber, Viola, Clochard, Laurent, Terheiden, Barbara, Mack, Sebastian   +7 more
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Oxygen and Nitrogen Incorporation During Cw Laser Recrystallization of Polysilicon

, 1982
The incorporation of nitrogen and oxygen in polysilicon has been examined by SIMS. The analysis, combined with C-V measurements and ion implantation, has been used to correlate the incorporation of the two species with the fixedcharge density at the back
C.I. Drowley, T.I. Kamins
core   +1 more source

Leakage Current Mechanisms in SiGe HBTs Fabricated Using Selective and Nonselective Epitaxy

, 2001
SiGe heterojunction bipolar transistors (HTBs) have been fabricated using selective epitaxy for the Si collector, followed in the same growth step by nonselective epitaxy for the p+ SiGe base and n-Si emitter cap.
Ashburn, Peter, Lamb, Andrew C., Bonar, J.M., Cristiano, Fuccio, Bonar, J. M., Hemment, P. L. F., Schiz, J. F. W., Hemment, Peter L. F., Hall, Stephen, Schiz, J.F.W.   +9 more
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Fracture strain of LPCVD polysilicon [PDF]

, 1988
A polysilicon bridge-slider structure in which one end of the bridge is fixed and the other is connected to a plate sliding in two flanged guideways, is designed and fabricated to study the strain at fracture of LPCVD polysilicon.
Muller, R. S., Tai, Y. C.
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