Results 61 to 70 of about 11,162 (212)

Atomic Layer Deposition in Transistors and Monolithic 3D Integration

Advanced Functional Materials, Volume 36, Issue 41, 21 May 2026.
Transistors are fundamental building blocks of modern electronics. This review summarizes recent progress in atomic layer deposition (ALD) for the synthesis of two‐dimensional (2D) metal oxides and transition‐metal dichalcogenides (TMDCs), with particular emphasis on their enabling role in monolithic three‐dimensional (M3D) integration for next ...
Yue Liu, Taoyu Zou, Cheng‐Yan Xu, Liang Zhen, Yang Li, Yong‐Young Noh   +5 more
wiley   +1 more source

Oxide Ceramics Large‐Scale Integration Devices to Mitigate Global Extreme Weather Due to Computers in the AI Era

International Journal of Ceramic Engineering &Science, Volume 8, Issue 3, May 2026.
Crystal IO FETs feature (1) extremely low off current and (2) high on current. For ultralow‐power consumption, we are aiming at replacing conventional memories by crystal IO‐based memories and ultralow‐power ALUs using AiMC FETs in the subthreshold regime. This report will introduce the trend of these technologies.
Shunpei Yamazaki, Tatsuya Onuki, Satoru Saito, Kazuki Tsuda, Hiromichi Godo, Takanori Matsuzaki, Koji Kusunoki, Yuto Yakubo, Hidekazu Miyairi, Ryota Hodo, Yasuhiro Jinbo, Fumito Isaka, Yuji Egi, Yoshinori Ando, Motomu Kurata, Tsutomu Murakawa, Takashi Shingu, Ryosuke Motoyoshi, Yosuke Tsukamoto, Yukinori Shima, Masami Jincho, Yasutaka Nakazawa, Masahiro Watanabe, Kayo Kumakura, Masataka Nakada, Ami Sato, Nobuharu Ohsawa, Kenichi Okazaki   +27 more
wiley   +1 more source

High Temperature Behavior of Polysilicon

, 2002
The polysilicon elements of thermal actuators can reach temperatures high enough to cause permanent deformation. A fundamental understanding of the constitutive behavior is necessary for intelligent design and life prediction, but mechanical testing at ...
William N. Sharpe, George Coles, Chung-Seog Oh   +2 more
core   +1 more source

Overcoming the Thermal‐Budget Barrier: Single‐Crystalline Silicon for Monolithic 3D Integration

Rare Metals, Volume 45, Issue 8, August 2026.
Dan Li, Yanbin Zhao, Paul K. Chu
wiley   +1 more source

Phosphorus-diffused polysilicon contacts for solar cells

, 2016
This paper describes the optimization of a technique to make polysilicon/SiO x contacts for silicon solar cells based on doping PECVD intrinsic polysilicon by means of a thermal POCl3 diffusion process.
Samundsett, Christian, Cuevas, Andres, Wan, Yimao, Bullock, James, Yan, Di   +4 more
core   +1 more source

Low temperature hot-wire polysilicon waveguides

We fabricated and measured low loss polysilicon waveguides deposited using Hot-Wire Chemical Vapor Deposition (HWCVD) at 240 °C.
Tarazona, A., Chen, Xia, Chong, Harold M.H., Ben Masaud, Taha M., Reed, Graham T.   +4 more
core   +1 more source

A Low-Cost CMOS-MEMS Piezoresistive Accelerometer with Large Proof Mass

Sensors, 2011
This paper reports a low-cost, high-sensitivity CMOS-MEMS piezoresistive accelerometer with large proof mass. In the device fabricated using ON Semiconductor 0.5 μm CMOS technology, an inherent CMOS polysilicon thin film is utilized as the piezoresistive
Mohd Haris Md Khir, Hongwei Qu, Peng Qu
doaj   +1 more source

In Situ Plasma‐Grown Silicon‐Oxide for Polysilicon Passivating Contacts

Advanced Materials Interfaces, 2020
Large‐scale manufacturing of polysilicon‐based passivating contacts for high‐efficiency crystalline silicon (c‐Si) solar cells demands simple fabrication of thermally stable SiOx films with well controlled microstructure and nanoscale thickness to enable
Areej Alzahrani, Thomas G. Allen, Michele De Bastiani, Emmanuel Van Kerschaver, George T. Harrison, Wenzhu Liu, Stefaan De Wolf   +6 more
doaj   +1 more source

Electrical Characterization of Polysilicon-to-Silicon Interfaces

, 1987
The structural properties of the polysilicon-to-silicon interface affect the electrical characteristics of devices with polysilicon contacts. The current characteristics of advanced bipolar transistors with polysilicon base and emitter contacts are very ...
R. F. W. Pease, J. F. Gibbons, E. F. Crabbé, J. L. Hoyt   +3 more
core   +1 more source

Fabrication and Electrical Characterization of Low-Temperature Polysilicon Films for Sensor Applications

Micromachines
The development of low-temperature piezoresistive materials provides compatibility with standard silicon-based MEMS fabrication processes. Additionally, it enables the use of such material in flexible substrates, thereby expanding the potential for ...
Filipa C. Mota, Inês S. Garcia, Aritz Retolaza, Dimitri E. Santos, Patrícia C. Sousa, Diogo E. Aguiam, Rosana A. Dias, Carlos Calaza, Alexandre F. Silva, Filipe S. Alves   +9 more
doaj   +1 more source