Results 61 to 70 of about 28,375 (268)

Polysilicon Thin Film Transistors

, 1990
Polysilicon thin film transistors are now in mass production. Key factors of the success are thinner polysilicon film and thermal oxidation. Practical applications of polysilicon thin film transistors have been limited, however, because of high ...
Ichio Yudasaka, Hiroyuki Ohshima
core   +1 more source

Low-thermal-budget electrically active thick polysilicon for CMOS-First MEMS-last integration

Microsystems & Nanoengineering
Low-thermal-budget, electrically active, and thick polysilicon films are necessary for building a microelectromechanical system (MEMS) on top of a complementary metal oxide semiconductor (CMOS).
Aron Michael, Ian Yao-Hsiang Chuang, Chee Yee Kwok, Kazuo Omaki   +3 more
doaj   +1 more source

The Path to Future‐Proof Photovoltaics in Europe: Current Status and Impact of Technological Innovation on Reliable and Bankable Photovoltaics

Advanced Energy and Sustainability Research, Volume 7, Issue 6, June 2026.
This article provides an overview of the current state of the art and future improvements in PV technology and explains how changes in the technology and design of individual PV components—at the module level, the balance‐of‐system (BOS) level, or the PV plant level—can affect the reliability, durability, and energy output of a PV system.
Ulrike Jahn, Paula Sánchez‐Friera, David Moser, Marcello Pereira Passaro, Delfina Munoz, Sandra Gallmetzer, Stefano Nicola Granata, Sascha Lindig, Ioannis Tsanakas, Ismail Kaaya, Ivan Gordon   +10 more
wiley   +1 more source

Tailoring of Waste‐Derived CO2 Adsorbents From the Perspective of Apparent and Intrinsic Property Regulation

cScience, Volume 2, Issue 2, June 2026.
ABSTRACT The conversion of waste materials into solid CO2 adsorbents is a promising strategy for carbon capture and waste management. In this review, we discuss recent advances in the preparation and modification of waste‐derived CO2 adsorbents, including carbon‐based materials, zeolites, metal–organic frameworks, layered double hydroxides, CaO, and ...
Han Zhang, Ziyan Yang, Lina Liu, Zhikun Zhang   +3 more
wiley   +1 more source

Deposited inter-polysilicon dielectrics for nonvolatile memories [PDF]

, 1999
Deposited instead of thermally grown oxides were studied to form very high-quality inter-polysilicon dielectric layers for embedded nonvolatile memory application.
Wallinga, Hans, Klootwijk, J.H., Klootwijk, Johan H, Kranenburg, Herma van, Woerlee, PH Pierre, Woerlee, P.H., van Kranenburg, H.   +6 more
core   +1 more source

The Effects of Structure Thickness, Air Gap Thickness and Silicon Type on the Performance of a Horizontal Electrothermal MEMS Microgripper

Actuators, 2018
The ongoing development of microelectromechanical systems (MEMS) over the past decades has made possible the achievement of high-precision micromanipulation within the micromanufacturing, microassembly and biomedical fields. This paper presents different
Marija Cauchi, Ivan Grech, Bertram Mallia, Pierluigi Mollicone, Nicholas Sammut   +4 more
doaj   +1 more source

Analysis of a Lateral Grain Boundary for Reducing Performance Variations in Poly-Si 1T-DRAM

Micromachines, 2020
A capacitorless one-transistor dynamic random-access memory device that uses a poly-silicon body (poly-Si 1T-DRAM) has been suggested to overcome the scaling limit of conventional one-transistor one-capacitor dynamic random-access memory (1T-1C DRAM).
Songyi Yoo, Wookyung Sun, Hyungsoon Shin
doaj   +1 more source

Atomic Layer Deposition in Transistors and Monolithic 3D Integration

Advanced Functional Materials, Volume 36, Issue 41, 21 May 2026.
Transistors are fundamental building blocks of modern electronics. This review summarizes recent progress in atomic layer deposition (ALD) for the synthesis of two‐dimensional (2D) metal oxides and transition‐metal dichalcogenides (TMDCs), with particular emphasis on their enabling role in monolithic three‐dimensional (M3D) integration for next ...
Yue Liu, Taoyu Zou, Cheng‐Yan Xu, Liang Zhen, Yang Li, Yong‐Young Noh   +5 more
wiley   +1 more source

Oxide Ceramics Large‐Scale Integration Devices to Mitigate Global Extreme Weather Due to Computers in the AI Era

International Journal of Ceramic Engineering &Science, Volume 8, Issue 3, May 2026.
Crystal IO FETs feature (1) extremely low off current and (2) high on current. For ultralow‐power consumption, we are aiming at replacing conventional memories by crystal IO‐based memories and ultralow‐power ALUs using AiMC FETs in the subthreshold regime. This report will introduce the trend of these technologies.
Shunpei Yamazaki, Tatsuya Onuki, Satoru Saito, Kazuki Tsuda, Hiromichi Godo, Takanori Matsuzaki, Koji Kusunoki, Yuto Yakubo, Hidekazu Miyairi, Ryota Hodo, Yasuhiro Jinbo, Fumito Isaka, Yuji Egi, Yoshinori Ando, Motomu Kurata, Tsutomu Murakawa, Takashi Shingu, Ryosuke Motoyoshi, Yosuke Tsukamoto, Yukinori Shima, Masami Jincho, Yasutaka Nakazawa, Masahiro Watanabe, Kayo Kumakura, Masataka Nakada, Ami Sato, Nobuharu Ohsawa, Kenichi Okazaki   +27 more
wiley   +1 more source

Bibliometric Analysis of Technological Innovation in Renewable Energy in the Transport and Logistics Sector

Corporate Social Responsibility and Environmental Management, Volume 33, Issue 3, Page 3712-3724, May 2026.
ABSTRACT This study conducts a comprehensive bibliometric analysis of technological innovation in renewable energy for the transport and logistics sector from 1996 to 2024. Using the Web of Science database, we identify three main research phases and map key collaboration networks and technological trends.
Yui‐yip Lau, Qiong Chen, Leila Kamalian, Mark Ching‐Pong Poo, Yang Andrew Wu   +4 more
wiley   +1 more source