Results 41 to 50 of about 11,162 (212)
A coupled Saber–TCAD–thermo‐mechanical simulation framework is proposed to evaluate microscopic stresses in SiC MOSFETs under overcurrent operation. Ultrahigh gate‐voltage driving reduces thermal and mechanical stress but increases gate oxide electric‐field stress, revealing a reliability tradeoff for DC solid‐state circuit breakers.
Bin Yu +3 more
wiley +1 more source
Large area crystalline silicon solar cells fabricated on ultra‐thin (80 μm) Si wafer featuring polysilicon‐based passivating contacts on both sides can further increase the energy output per unit weight. In this work, the large area, screen‐printed solar cells with high temperature fire‐through contacts, yielded an exceptional efficiency‐to‐thickness ...
Yuchi Lan +5 more
wiley +1 more source
A tandem neural network directly solves the multivalued inverse problem of extracting semiconductor parameters from transistor measurements. Trained on only 1000 simulations, the network infers six material parameters (e.g., defect states, carrier concentration, mobility) in under 1 ms, demonstrating a broadly applicable framework for semiconductor ...
Masatoshi Kimura +8 more
wiley +1 more source
The ORCA‐TWIN qCMOS Experiment I. Science Case and Commissioning at Calar Alto Observatory
ABSTRACT We describe a pilot study to explore a new generation of fast and low noise CMOS image sensors for time domain astronomy, using two remote telescopes with a baseline of 1635 km. The experiment involves direct imaging with novel qCMOS image sensor technology that combines fast readout with sub‐electron readout noise.
Martin M. Roth +20 more
wiley +1 more source
Polysilicon Emitter Fabrication and Modeling [PDF]
The research proposed for 1986 was to develop the technology for fabricating, measuring, and computer modeling the polysilicon emitter bipolar transistor.
Neudeck, G. W. +5 more
core +1 more source
Low-thermal-budget electrically active thick polysilicon for CMOS-First MEMS-last integration
Low-thermal-budget, electrically active, and thick polysilicon films are necessary for building a microelectromechanical system (MEMS) on top of a complementary metal oxide semiconductor (CMOS).
Aron Michael +3 more
doaj +1 more source
Varieties of Local Implementation for Net Zero in China: Evidence From Three Cities
ABSTRACT Since China updated its nationally determined contributions in 2021, achieving carbon peaking before 2030 and carbon neutrality before 2060—the so‐called “dual carbon” goals—has become the new guiding principle of China's climate governance. However, few studies have examined the implementation of China's dual carbon goals, particularly the ...
Ting Guan, Ziwei Gou, Yixian Sun
wiley +1 more source
The ongoing development of microelectromechanical systems (MEMS) over the past decades has made possible the achievement of high-precision micromanipulation within the micromanufacturing, microassembly and biomedical fields. This paper presents different
Marija Cauchi +4 more
doaj +1 more source
Economics of polysilicon processes [PDF]
Techniques are being developed to provide lower cost polysilicon material for solar cells. Existing technology which normally provides semiconductor industry polysilicon material is undergoing changes and also being used to provide polysilicon material ...
Yaws, C. L., Chou, S. M., Li, K. Y.
core
Fabrication and characterisation of polysilicon-based clamped-clamped filter
The rapid growth of micromaching technology makes the miniaturized or integrated MEMS resonator or filter become possible. This paper reports on the fabrication and characterization of the polysilicon-based RF MEMS filter, comprised of the two clamped ...
Yong Mei Zhao +8 more
core +1 more source

