Results 31 to 40 of about 11,162 (212)
IEEE AccessIn a polysilicon-based photodetector structure, a polysilicon film is important because it acts as both a light-absorption layer and a conductive path.
Jae-Sung Lee
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Advanced Electronic Materials, EarlyView.Selector integration enables scalable memristor crossbar arrays by suppressing sneak‐path currents and improving array selectivity. This review summarizes integration strategies, device requirements, challenges, and opportunities for high‐density memory, compute‐in‐memory, and neuromorphic computing systems.
Zohreh Hajiabadi +3 more
wiley +1 more source
Analysis of the Sensing Margin of Silicon and Poly-Si 1T-DRAM
Micromachines, 2020 Recently, one-transistor dynamic random-access memory (1T-DRAM) cells having a polysilicon body (poly-Si 1T-DRAM) have attracted attention as candidates to replace conventional one-transistor one-capacitor dynamic random-access memory (1T-1C DRAM).
Hyeonjeong Kim +5 more
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ENERGY &ENVIRONMENTAL MATERIALS, EarlyView.Perovskite/silicon tandem solar cells offer efficiencies beyond 30%, yet conventional architectures face trade‐offs between optical performance and current matching. Three‐terminal tandems employing silicon back‐contact bottom cells eliminate the current‐matching constraint while minimizing optical losses, offering superior energy yield under real ...
Yunhao Fan +4 more
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EPJ PhotovoltaicsIBC solar cells have gained tremendous interest in the PV industry as next-generation technology. ISFH has developed a lean manufacturing process sequence for POLO IBC solar cells applying p-type Cz wafers, an Al-BSF base contact and local PECVD ...
Dullweber Thorsten +16 more
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TECHNOLOGIES FOR HETEROSTRUCTURES FORMATION OF TRANSDUCER
Известия высших учебных заведений. Поволжский регион:Технические науки, 2020 Background. The relevance of the work is due to the high heterogeneity of the elements and structures of modern microelectronic converters of physical quantities, designed to operate in a wide range of temperatures and radiation.
P. G. Mikhaylov +2 more
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FlexMat, EarlyView.This review explores recent progress in printing strategies such as inkjet, screen, liquid metal, and roll to roll (R2R) methods and their roles in fabricating flexible TFTs. Device architectures are examined with emphasis on printed components and their influence on performance and stability.
Xia Zhao +6 more
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Room‐temperature macroscopic observation of single‐electron quantum states
InfoMat, EarlyView.Abstract Single‐electron quantum states are confined to cryogenic observation, since miniaturization amplifies fringing capacitance that masks charge quantization. Liu et al. address this with a 2D coplanar architecture suppressing fringing capacitance, achieving a non‐volatile ~0.5 V threshold shift per electron at room temperature, an order of ...
YanRong Li
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Two-Scale Simulation of Drop-Induced Failure of Polysilicon MEMS Sensors
Sensors, 2011 In this paper, an industrially-oriented two-scale approach is provided to model the drop-induced brittle failure of polysilicon MEMS sensors. The two length-scales here investigated are the package (macroscopic) and the sensor (mesoscopic) ones.
Barbara Simoni +4 more
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Piezoresistance in polysilicon
Electronics Letters, 1984 A theoretical model for piezoresistance in polysilicon is described. Grain size, orientation and doping dependence effects are included. Predictions of gauge factor using the model give reasonable agreement with experimental results and enable optimum processing parameters to be chosen for a given grain size.
French, PJ, Evans, A G R
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