Results 31 to 40 of about 28,375 (268)

Analysis of High-Temperature Data Retention in 3D Floating-Gate nand Flash Memory Arrays

open access: yesIEEE Journal of the Electron Devices Society, 2023
In this paper, we present a detailed experimental investigation of high-temperature data retention in 3D floating-gate NAND Flash memory arrays. Data reveal that charge detrapping from the cell tunnel oxide and depassivation of traps in the string ...
Gerardo Malavena   +4 more
doaj   +1 more source

Hot-Carrier Stressing of NPN Polysilicon Emitter Bipolar Transistors Incorporating Fluorine

open access: yes, 2003
The effects of fluorine on the hot-carrier induced degradation in low-thermal-budget polysilicon emitter NPN bipolar transistors have been examined. Forward Gummel plots, base emitter (BE) diode characteristics, and stress currents were measured during ...
Ashburn, P.   +11 more
core   +1 more source

Fabrication and Characterization of Nanonet-Channel LTPS TFTs Using a Nanosphere-Assisted Patterning Technique

open access: yesMicromachines, 2021
We present the fabrication and electrical characteristics of nanonet-channel (NET) low-temperature polysilicon channel (LTPS) thin-film transistors (TFTs) using a nanosphere-assisted patterning (NAP) technique.
Gilsang Yoon   +4 more
doaj   +1 more source

Mechanical Characterization of Polysilicon MEMS: A Hybrid TMCMC/POD-Kriging Approach

open access: yesItalian National Conference on Sensors, 2018
Microscale uncertainties related to the geometry and morphology of polycrystalline silicon films, constituting the movable structures of micro electro-mechanical systems (MEMS), were investigated through a joint numerical/experimental approach.
Ramin Mirzazadeh, S. E. Azam, S. Mariani
semanticscholar   +1 more source

Deposition kinetics of in-situ oxygen doped polysilicon film [PDF]

open access: yesTekhnologiya i Konstruirovanie v Elektronnoi Apparature, 2012
The influence of deposition conditions on composition of in-situ oxygen doped polysilicon films has been investigated. A kinetic model of adsorption-deposition process using concentrated silane and nitrous oxide has been developed.
Nalivaiko O. Yu., Turtsevich A. S.
doaj   +2 more sources

Prediction of China’s Polysilicon Prices: A Combination Model Based on Variational Mode Decomposition, Sparrow Search Algorithm and Long Short-Term Memory

open access: yesMathematics
Given the non-stationarity, nonlinearity, and high complexity of polysilicon prices in the photovoltaic (PV) industry chain, this paper introduces upstream and downstream material prices of the PV industry chain and macroeconomic indicators as ...
Jining Wang, Lin Jiang, Lei Wang
doaj   +1 more source

Design and Modeling of Polysilicon Electrothermal Actuators for a MEMS Mirror with Low Power Consumption

open access: yesMicromachines, 2017
Endoscopic optical-coherence tomography (OCT) systems require low cost mirrors with small footprint size, out-of-plane deflections and low bias voltage.
Miguel Lara-Castro   +6 more
doaj   +1 more source

Polysilicon-Channel Synaptic Transistors for Implementation of Short- and Long-Term Memory Characteristics

open access: yesBiomimetics, 2023
The rapid progress of artificial neural networks (ANN) is largely attributed to the development of the rectified linear unit (ReLU) activation function.
Myung-Hyun Baek, Hyungjin Kim
doaj   +1 more source

Ultrapurification of Silicon for Photovoltaic Applications

open access: yes, 2010
The recent explosive growth of Photovoltaics and the relative avidity for silicon of the predominant solar cell technology have resulted in a dramatic change of the polysilicon industry structure. While in the past the polysilicon was manufactured almost
Carlos del Cañizo   +5 more
core   +1 more source

Investigation of the stability of polysilicon layers in SOI-structures under irradiation by electrons and hard magnetic field influence [PDF]

open access: yesTekhnologiya i Konstruirovanie v Elektronnoi Apparature, 2010
The properties of recrystallized polysilicon on insulator layers of p-type conductive SOI-structures with different carrier concentration irradiated with high-energy electrons flow about 1017 сm–2 in temperature range 4,2—300 К and high magnetic fields ...
Khoverko Yu. N.
doaj   +2 more sources

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