Results 201 to 210 of about 28,375 (268)

Wacker Opens Polysilicon Plant

Chemical & Engineering News Archive, 2012
Wacker Chemie is starting up a $2.5 billion plant in Charleston, Tenn., that will make polysilicon for the solar panel industry.
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Tensile testing of polysilicon

Experimental Mechanics, 1999
Tensile specimens of polysilicon are deposited on a silicon wafer; one end remains affixed to the wafer and the other end has a relatively large paddle that can be gripped by an electrostatic probe. The overall length of the specimen is less than 2 mm, but the smooth tensile portion can be as small as 1.5×2μm in cross section and 50μm long.
W. N. Sharpe, K. T. Turner, R. L. Edwards   +2 more
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Polysilicon micromachined switch

SPIE Proceedings, 2001
Abstract--LPCVD Si02 and polysilicon being used as sacrificial layer and cantilever respectively, a polysilicon micromachined RFswitch has been fabricated. In the process the stress of polysilicon is released to prevent polysilicon membrane from bending.
Zhengyuan Zhang, Zhiyu Wen, Shilu Xu, Kaicheng Li, Zhengfan Zhang, Shanglian Huang   +5 more
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Selective Growth of Polysilicon

Journal of The Electrochemical Society, 1986
A chemical vapor deposition (CVD) technique for selective growth of polysilicon has been developed. This technique makes it possible to grow polysilicon only on the exposed silicon without a Si nucleus on the or mask. Perfect selectivity over the whole wafer surface was obtained in a system in the temperature range of 900°–1000°C under a pressure of ...
Y. Furumura, F. Mieno, T. Nishizawa, M. Maeda   +3 more
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Effect of polysilicon-emitter shape on dopant diffusion in polysilicon-emitter transistors

IEEE Electron Device Letters, 1989
The shape of the polysilicon region of a polysilicon-emitter transistor fabricated with a single layer of polysilicon depends on the processing conditions and can vary considerably. When the boundary between the polysilicon and the adjacent oxide is not vertical, the anisotropic dopant diffusivity in polysilicon can limit the ability of the dopant to ...
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Plasma etching of polysilicon/nitride/polysilicon sandwich structure for sensor applications

Microelectronic Engineering, 1993
Abstract An in situ two step process has been developed for plasma etching of poly-Si/nitride/poly-Si sandwich structures for a surface micromachined tactile sensor. Compared with the one-step process, the two-step process provides the desired etch selectivity, better uniformity and easier control of the process.
Y.X. Li, M. Laros, P.M. Sarro, P.J. French, R.F. Wolffenbuttel   +4 more
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Electrical characterization of polysilicon surface roughness in double polysilicon EPROMS

Proceedings Ninth Biennial University/Government/Industry Microelectronics Symposium, 2002
Data retention in floating gate double-polysilicon erasable programmable read-only memories (EPROMs) strongly depends on the insulating properties of the interpolyoxide layer. The author describes a method for rapid evaluation of the interpolyoxide quality and the surface texture of the underlying polysilicon by simple electrical measurements.
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Arsenic segregation in polysilicon

Proceedings, annual meeting, Electron Microscopy Society of America, 1983
In this work As doped polysilicon was deposited onto (100) silicon wafers by APCVD at 660°C from a silane-arsine mixture, followed by a ten minute anneal at 1000°C, and in one case a further ten minute anneal at 700°C. Specimens for TEM and STEM analysis were prepared by chemical polishing.
P.E. Batson, C.R.M. Grovenor, D.A. Smith, C. Wong   +3 more
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Polysilicon emitter technology

Proceedings of the Bipolar Circuits and Technology Meeting, 2003
The current status of polysilicon emitter technology is reviewed. The advantages of polysilicon emitters in high speed VLSI processes, in particular their high gains and scalability, are highlighted. The physics and metallurgy of the polysilicon/silicon interface is described in detail, and a direct comparison is made with electrical results.
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A model for PolySilicon MOSFET's

IEEE Transactions on Electron Devices, 1987
A model is developed to describe the high value of threshold voltage and the low value of channel mobility observed in n-channel polysilicon (poly-Si) MOSFET's. The model takes into account charge-coupling between the gate and grain boundary traps. The charge-coupling appears as an image charge in Poisson's equation and the charge neutrality equation ...
A.F.M. Anwar, A.N. Khondker
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