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Journal of the Korean Physical Society, 2016
Polysilicon layers acting as an absorption layer in a metal-semiconductor-metal (MSM) photodetector were post-annealed with various annealing processes to find the relationship between the morphology of polysilicon and the photo-response of the MSM photodetector.
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Polysilicon layers acting as an absorption layer in a metal-semiconductor-metal (MSM) photodetector were post-annealed with various annealing processes to find the relationship between the morphology of polysilicon and the photo-response of the MSM photodetector.
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The Polysilicon-Silicon Interface
MRS Proceedings, 1987ABSTRACTPolycrystalline silicon is frequently deposited on single crystal silicon as a part of devices. The poly is used as both a dopant source and a low resistance contact in a modern method of fabricating high gain bipolar transistors. The randomness of polysilicon and its interface with the single crystal is an inherent source of differences among ...
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Amorphous and polysilicon devices
1994Polysilicon is made up of silicon grains, each grain being a crystal in which the silicon atoms are arranged in a periodic structure. The distance between 0 two silicon atoms in the crystal is 2 – 3 A, and the typical size of a grain in polysilicon is 1, 000 – 10, 000 A. Thus each grain contains many millions of atoms.
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Thermoelectric properties of nanostructured porous-polysilicon thin films
Nano Energy, 2021Katir Ziouche, Zahia Bougrioua
exaly
The status of polysilicon feedstock
AIP Conference Proceedings, 1999Growth in world-wide demand for silicon (Si) photovoltaics (PV) and a short-fall in the traditional supplies of Si into the PV industry call for renewed interest in determining the quantities of Si required per megawatt, the specifications for solar grade Si feedstock, and the technologies for producing such material. An ample, dedicated and consistent
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Metallisation of Boron‐Doped Polysilicon Layers by Screen Printed Silver Pastes
, 2017S. Mack +5 more
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