Results 191 to 200 of about 28,375 (268)

Effect of polysilicon interface on stress in multistacked polysilicon films

SPIE Proceedings, 1999
In this paper, we present a detailed study of the effect of the interface in multi-stacked polysilicon film. In order to investigate microstructural stress characteristics, we fabricated laminated type 2 micrometers thickness of polysilicon test structures such as bridges and rotating beam pairs.
Chang-Auck Choi, Chang S. Lee, Won-Ick Jang, Jong-Hyun Lee, Byung-Ki Shon   +4 more
openaire   +1 more source

Polysilicon Passivating Contacts for Silicon Solar Cells: Interface Passivation and Carrier Transport Mechanism

ACS Applied Energy Materials, 2019
Polysilicon passivating contacts, consisting of a stack of tunnel-oxide and doped polysilicon layers, can simultaneously provide excellent surface passivation and low contact resistivity for silico...
Wenzhu Liu, Xinbo Yang, Jingxuan Kang, Shuai Li, Lujia Xu, Song Zhang, Hang Xu, Jun Peng, Fengxian Xie, Jui‐Han Fu, Kai Wang, Jiang Liu, Areej Alzahrani, S. Wolf   +13 more
semanticscholar   +1 more source

Effective impurity gettering by phosphorus- and boron-diffused polysilicon passivating contacts for silicon solar cells

Solar Energy Materials and Solar Cells, 2017
This paper presents direct experimental evidence for the strong impurity gettering effects associated with the formation of both phosphorus and boron doped polysilicon/oxide passivating contacts for silicon solar cells, doped via thermal diffusion from ...
A. Liu, D. Yan, S. Phang, A. Cuevas, D. Macdonald   +4 more
semanticscholar   +1 more source

Improvement of polysilicon oxide by growing on polished polysilicon film

IEEE Electron Device Letters, 1997
This letter first reports the characteristics of polyoxide that was thermally grown on polished polysilicon film. Compared to conventional polyoxide, polyoxide grown on polished polysilicon film exhibits lower leakage current, higher dielectric breakdown field, larger effective barrier height, and higher charge-to-breakdown.
null Tan Fu Lei, null Juing-Yi Cheng, null Shyh Yin Shiau, null Tien Sheng Chao, null Chao Sung Lai   +4 more
openaire   +1 more source

Radiative energy loss in a polysilicon CVD reactor

Solar Energy Materials and Solar Cells, 2011
CARLOS Del cañizo, A Luque
exaly   +2 more sources

Degradation in polysilicon thin film transistors related to the quality of the polysilicon material

Microelectronics Reliability, 2003
International ...
Toutah, H., Tala-Ighil, B., Llibre, Jean-François, Boudard, B., Mohammed-Brahim, Tayeb, Bonnaud, Olivier   +5 more
openaire   +5 more sources

Polysilicon angular microvibromotors

Journal of Microelectromechanical Systems, 1992
Two types of LPCVD polysilicon angular microvibromotors were designed, fabricated, and successfully operated in air and in vacuum. Each utilizes an electrostatically driven lateral resonant structure (the converter) to actuate a circular microrotor by means of oblique mechanical impact.
A.P. Lee, A.P. Pisano
openaire   +2 more sources

Characterization of polysilicon oxides thermally grown and deposited on the polished polysilicon films

IEEE Transactions on Electron Devices, 1998
This work examines the characteristics of polyoxides thermally grown and deposited on polished polysilicon films. A well-controlled chemical mechanical polishing (CMP) process is also presented to achieve a planar surface morphology for polysilicon films.
null Tan Fu Lei, null Juing-Yi Cheng, null Shyh Yin Shiau, null Tien Sheng Chao, null Chao Sung Lai   +4 more
openaire   +1 more source

Polysilicon with everything

Physics Bulletin, 1984
There is much interest at present in polysilicon in combination with a wide variety of other materials. The physical behaviour, structure and fabrication of polysilicon as well as its applications to a range of novel device structures were discussed at a recent meeting of the Electronics Group of The Institute of Physics.
openaire   +1 more source

Novel self-aligned polysilicon-gate MOSFETs with polysilicon source and drain

Solid-State Electronics, 1987
Abstract A novel self-aligned technique is described for self-aligning a polysilicon gate in devices with polysilicon source and drain regions. The technique is demonstrated for two types of polysilicon source and drain devices. In one type of device, the polysilicon serves as the source of dopant for diffused source and drain junctions.
M.K. Moravvej-Farshi, M.A. Green
openaire   +1 more source