Results 171 to 180 of about 28,375 (268)

A Detection Method for Seeding Temperature in Czochralski Silicon Crystal Growth Based on Multi-Sensor Data Fusion. [PDF]

Sensors (Basel)
Jiang L, Chang T, Liu D.
europepmc   +1 more source

MEMS Micromirror Actuation Techniques: A Comprehensive Review of Trends, Innovations, and Future Prospects. [PDF]

Micromachines (Basel)
Ahmad M, Bahri M, Sawan M.
europepmc   +1 more source

Design and Static Analysis of MEMS-Actuated Silicon Nitride Waveguide Optical Switch. [PDF]

Micromachines (Basel)
Xu Y, Lin TA, Yan P.
europepmc   +1 more source

Near-Infrared Spectral MEMS Gas Sensor for Multi-Component Food Gas Detection. [PDF]

Micromachines (Basel)
Yan X, Tan Y, Wang Y, Chen G, Xia W, Zhou G, Luo H, Liu H, Gong T, Zhang X.   +9 more
europepmc   +1 more source

Hole-Selective SiN _x and AlO _x Tunnel Nanolayers for Improved Polysilicon Passivating Contacts. [PDF]

ACS Appl Energy Mater
McNab S, Morisset A, Libraro S, Genç E, Niu X, Swallow JEN, Wilshaw P, Weatherup RS, Wright M, Haug FJ, Bonilla RS.   +10 more
europepmc   +1 more source

A High-Density 4H-SiC MOSFET Based on a Buried Field Limiting Ring with Low Q_gd and R_on. [PDF]

Micromachines (Basel)
Cui W, Guo J, Xu H, Zhang DW.
europepmc   +1 more source

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Influence of Polysilicon Thickness on Properties of Screen‐Printed Silver Paste Metallized Silicon Oxide/Polysilicon Passivated Contacts

Physica Status Solidi (A) Applications and Materials Science, 2021
This work investigates how the thickness of the polysilicon layer and temperatures during contact sintering influence the properties of SiOx/polysilicon passivated contacts.
Aditya Chaudhary, Jan Lossen, Frank Huster   +2 more
exaly   +2 more sources

Capacitance Voltage Characteristics of Polysilicon–Polysilicon Oxide–Polysilicon Structures for Three-Dimensional Memory

MRS Proceedings, 2000
ABSTRACTThree-dimensional integration offers a dramatic reduction in chip area required per bit and has long been a research objective. Three-dimensional integration with thin film transistors (TFTs) requires detailed parametric analysis with techniques such as Capacitance-Voltage (CV) Characterization.
John R. Lindsey, T. S. Kalkur
openaire   +2 more sources

Microstructures of Polysilicon

MRS Proceedings, 1987
ABSTRACTSome typical microstructural studies of polycrystalline silicon using transmission electron microscopy (TEM) are described, including the application of this material for assisting TEM investigations themselves. Examples include oxidation and realignment of polysilicon thin films, the structure of polysilicon in EEPROM devices, polysilicon in ...
R. Sinclair, A. H. Carim, J. Morgiel, J. C. Bravman   +3 more
openaire   +2 more sources