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Effect of polysilicon-emitter shape on dopant diffusion in polysilicon-emitter transistors
IEEE Electron Device Letters, 1989The shape of the polysilicon region of a polysilicon-emitter transistor fabricated with a single layer of polysilicon depends on the processing conditions and can vary considerably. When the boundary between the polysilicon and the adjacent oxide is not vertical, the anisotropic dopant diffusivity in polysilicon can limit the ability of the dopant to ...
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Polysilicon emitter technology
Proceedings of the Bipolar Circuits and Technology Meeting, 2003The current status of polysilicon emitter technology is reviewed. The advantages of polysilicon emitters in high speed VLSI processes, in particular their high gains and scalability, are highlighted. The physics and metallurgy of the polysilicon/silicon interface is described in detail, and a direct comparison is made with electrical results.
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Thermoelectric properties of nanostructured porous-polysilicon thin films
Nano Energy, 2021Katir Ziouche
exaly
Amorphous and polysilicon devices
1994Polysilicon is made up of silicon grains, each grain being a crystal in which the silicon atoms are arranged in a periodic structure. The distance between 0 two silicon atoms in the crystal is 2 – 3 A, and the typical size of a grain in polysilicon is 1, 000 – 10, 000 A. Thus each grain contains many millions of atoms.
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Phosphorus-diffused polysilicon contacts for solar cells
Solar Energy Materials and Solar Cells, 2015James Bullock, Di Yan, Yimao Wan
exaly