Results 151 to 160 of about 11,162 (212)
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Effect of polysilicon interface on stress in multistacked polysilicon films
SPIE Proceedings, 1999In this paper, we present a detailed study of the effect of the interface in multi-stacked polysilicon film. In order to investigate microstructural stress characteristics, we fabricated laminated type 2 micrometers thickness of polysilicon test structures such as bridges and rotating beam pairs.
Chang-Auck Choi +4 more
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Improvement of polysilicon oxide by growing on polished polysilicon film
IEEE Electron Device Letters, 1997This letter first reports the characteristics of polyoxide that was thermally grown on polished polysilicon film. Compared to conventional polyoxide, polyoxide grown on polished polysilicon film exhibits lower leakage current, higher dielectric breakdown field, larger effective barrier height, and higher charge-to-breakdown.
null Tan Fu Lei +4 more
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Physics Bulletin, 1984
There is much interest at present in polysilicon in combination with a wide variety of other materials. The physical behaviour, structure and fabrication of polysilicon as well as its applications to a range of novel device structures were discussed at a recent meeting of the Electronics Group of The Institute of Physics.
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There is much interest at present in polysilicon in combination with a wide variety of other materials. The physical behaviour, structure and fabrication of polysilicon as well as its applications to a range of novel device structures were discussed at a recent meeting of the Electronics Group of The Institute of Physics.
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Degradation in polysilicon thin film transistors related to the quality of the polysilicon material
Microelectronics Reliability, 2003International ...
Toutah, H. +5 more
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IEEE Transactions on Electron Devices, 1998
This work examines the characteristics of polyoxides thermally grown and deposited on polished polysilicon films. A well-controlled chemical mechanical polishing (CMP) process is also presented to achieve a planar surface morphology for polysilicon films.
null Tan Fu Lei +4 more
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This work examines the characteristics of polyoxides thermally grown and deposited on polished polysilicon films. A well-controlled chemical mechanical polishing (CMP) process is also presented to achieve a planar surface morphology for polysilicon films.
null Tan Fu Lei +4 more
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Novel self-aligned polysilicon-gate MOSFETs with polysilicon source and drain
Solid-State Electronics, 1987Abstract A novel self-aligned technique is described for self-aligning a polysilicon gate in devices with polysilicon source and drain regions. The technique is demonstrated for two types of polysilicon source and drain devices. In one type of device, the polysilicon serves as the source of dopant for diffused source and drain junctions.
M.K. Moravvej-Farshi, M.A. Green
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Polysilicon angular microvibromotors
Journal of Microelectromechanical Systems, 1992Two types of LPCVD polysilicon angular microvibromotors were designed, fabricated, and successfully operated in air and in vacuum. Each utilizes an electrostatically driven lateral resonant structure (the converter) to actuate a circular microrotor by means of oblique mechanical impact.
A.P. Lee, A.P. Pisano
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Tensile testing of polysilicon
Experimental Mechanics, 1999Tensile specimens of polysilicon are deposited on a silicon wafer; one end remains affixed to the wafer and the other end has a relatively large paddle that can be gripped by an electrostatic probe. The overall length of the specimen is less than 2 mm, but the smooth tensile portion can be as small as 1.5×2μm in cross section and 50μm long.
W. N. Sharpe +2 more
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Wacker Opens Polysilicon Plant
Chemical & Engineering News Archive, 2012Wacker Chemie is starting up a $2.5 billion plant in Charleston, Tenn., that will make polysilicon for the solar panel industry.
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Electrical characterization of polysilicon surface roughness in double polysilicon EPROMS
Proceedings Ninth Biennial University/Government/Industry Microelectronics Symposium, 2002Data retention in floating gate double-polysilicon erasable programmable read-only memories (EPROMs) strongly depends on the insulating properties of the interpolyoxide layer. The author describes a method for rapid evaluation of the interpolyoxide quality and the surface texture of the underlying polysilicon by simple electrical measurements.
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