Results 271 to 280 of about 52,078 (314)
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Effect of Post-Deposition Processing on ZnO Thin Films and Devices
Journal of Electronic Materials, 2009Post-deposition processing was conducted on ZnO thin films deposited by radio␣frequency (RF) magnetron sputtering. Rapid thermal annealing (RTA) and ion implantation followed by RTA gave increased conductivity and the latter increased Hall-effect mobility from 1.7 cm2 V−1 s−1 to 9.5 cm2 V−1 s−1 Metal–semiconductor–metal photodetectors (MSM-PDs) had a ...
Tingfang Yen +4 more
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IC Post-Processing Module for Deposition of Thin Metal Films
1998The postprocessing module described in this paper enables the addition of a wide range of desired metal film, while maintaining compatibility with IC processing. When being able to combine any thin metal film with electronics, a new class of transducers becomes feasible with a performance often superior to existing silicon transducers.
D. Wijngaards +2 more
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ACS Nano, 2012
The structuring in organic electrically active thin films critically influences the performance of devices comprising them. Controlling film structure, however, remains challenging and generally requires stringent deposition conditions or modification of the substrate. To this end, we have developed post-deposition processing methods that are decoupled
Anna M, Hiszpanski +5 more
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The structuring in organic electrically active thin films critically influences the performance of devices comprising them. Controlling film structure, however, remains challenging and generally requires stringent deposition conditions or modification of the substrate. To this end, we have developed post-deposition processing methods that are decoupled
Anna M, Hiszpanski +5 more
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Journal of the American Chemical Society, 2014
Though both the crystal structure and molecular orientation of organic semiconductors are known to impact charge transport in thin-film devices, separately accessing different polymorphs and varying the out-of-plane molecular orientation is challenging, typically requiring stringent control over film deposition conditions, film thickness, and substrate
Anna M, Hiszpanski +6 more
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Though both the crystal structure and molecular orientation of organic semiconductors are known to impact charge transport in thin-film devices, separately accessing different polymorphs and varying the out-of-plane molecular orientation is challenging, typically requiring stringent control over film deposition conditions, film thickness, and substrate
Anna M, Hiszpanski +6 more
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Applied Physics A, 2008
Electron beam induced deposition was performed using a Pt(PF3)4 precursor gas. Self-standing nanowires were produced on the edge of a molybdenum film, followed by two post-deposition processes; electron beam irradiation at room temperature and heating at about 400 K in vacuum. The as-deposited nanowires were composed of an amorphous phase, of which the
M. Takeguchi, M. Shimojo, K. Furuya
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Electron beam induced deposition was performed using a Pt(PF3)4 precursor gas. Self-standing nanowires were produced on the edge of a molybdenum film, followed by two post-deposition processes; electron beam irradiation at room temperature and heating at about 400 K in vacuum. The as-deposited nanowires were composed of an amorphous phase, of which the
M. Takeguchi, M. Shimojo, K. Furuya
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Physica C: Superconductivity and its Applications, 1989
Abstract The chemical and structural properties of epitaxial Y 1 Ba 2 Cu 3 (F)O thin films, fabricated by multilayer electron beam evaporation, are evaluated, both laterally and vertically, as a function of various annealing schedules by secondary ion mass spectrometry (SIMS) using a high resolution scanning ion microprobe. The presence of residual F
J.M. Chabala +6 more
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Abstract The chemical and structural properties of epitaxial Y 1 Ba 2 Cu 3 (F)O thin films, fabricated by multilayer electron beam evaporation, are evaluated, both laterally and vertically, as a function of various annealing schedules by secondary ion mass spectrometry (SIMS) using a high resolution scanning ion microprobe. The presence of residual F
J.M. Chabala +6 more
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ECS Transactions, 2016
The influence of the post deposition anneal (PDA) to the Al2O3 film quality was investigated. In the case of PDA using Ar/O2 plasma, the Al2O3/substrate interface quality was degraded because the oxidation at Al2O3/substrate interface proceeds. In the case of PDA using H2O, the gate leakage current can be decreased.
Tomoyuki Suwa +10 more
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The influence of the post deposition anneal (PDA) to the Al2O3 film quality was investigated. In the case of PDA using Ar/O2 plasma, the Al2O3/substrate interface quality was degraded because the oxidation at Al2O3/substrate interface proceeds. In the case of PDA using H2O, the gate leakage current can be decreased.
Tomoyuki Suwa +10 more
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Deposition and post-processing of polycrystalline diamond for freestanding films and substrates
The 33rd IEEE International Conference on Plasma Science, 2006. ICOPS 2006. IEEE Conference Record - Abstracts., 2006Summary form only given. In this paper, we report on the synthesis of high quality diamond and the fabrication of optical quality windows and uniform thickness ion beam stripping foils. Both of these applications require the deposition of high quality diamond, the laser cutting of the diamond to a desired shape, the post processing of the diamond by ...
S. Zuo +4 more
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Enhancement of surface reflectivity of fused deposition modeling parts by post-processing
Optics Communications, 2019Abstract Fused deposition modeling (FDM) parts were enhanced by post-processing to improve surface quality. After reforming with loading and heating applied, the surface can reflect light. Hence, FDM parts with reflective surfaces fabricated from the regular FDM process can be used as optical elements.
Yu-Fan Chen, Yen-Hung Wang, Jui-che Tsai
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