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A 71.9% power-added-efficiency inverse Class-FLDMOS

2006 IEEE MTT-S International Microwave Symposium Digest, 2006
Design and measured results of an inverse class-F power amplifier for high efficiency operation built with an LDMOS transistor is reported in this paper. We describe the design methodology, in particular the choice of the optimum load impedance presented at the fundamental frequency and at the harmonics. Measurements performed at 1GHz on this one stage
Allam, S.   +4 more
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A 45% power-added-efficiency, Ku-band 60W GaN power amplifier

2011 IEEE MTT-S International Microwave Symposium, 2011
Summary form only given, as follows. A Ku-band 60 W GaN power amplifier is presented. To obtain the high efficiency, new matching circuit topology to control the reflection phase at the 2nd harmonic frequency (2fo) is applied to the power amplifier. The measured power added efficiency (PAE) of 44.9% with the output power of 47.9 dBm (62.2W) is obtained
Kazuhisa Yamauchi   +5 more
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