Results 1 to 10 of about 3,739 (202)
An Improved UU-MESFET With High Power Added Efficiency [PDF]
Micromachines, 2018 An improved ultrahigh upper gate 4H-SiC metal semiconductor field effect transistor (IUU-MESFET) is proposed in this paper. The structure is obtained by modifying the ultrahigh upper gate height h of the ultrahigh upper gate 4H-SiC metal semiconductor ...
Shunwei Zhu, Hujun Jia
exaly +5 more sources
Improved MRD 4H-SiC MESFET With High Power Added Efficiency [PDF]
Micromachines, 2019 An improved multi-recessed double-recessed p-buffer layer 4H–SiC metal semiconductor field effect transistor (IMRD 4H-SiC MESFET) with high power added efficiency is proposed and studied by co-simulation of advanced design system (ADS) and technology ...
Yintang Yang, Shunwei Zhu, Hujun Jia
exaly +5 more sources
Improved DRUS 4H-SiC MESFET with High Power Added Efficiency [PDF]
Micromachines, 2019 A 4H-SiC metal semiconductor field effect transistor (MESFET) with layered doping and undoped space regions (LDUS-MESFET) is proposed and simulated by ADS and ISE-TCAD software in this paper.
Hujun Jia +7 more
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An Improved 4H-SiC MESFET with a Partially Low Doped Channel [PDF]
Micromachines, 2019 An improved 4H-SiC metal semiconductor field effect transistor (MESFET) based on the double-recessed MESFET (DR-MESFET) for high power added efficiency (PAE) is designed and simulated in this paper and its mechanism is explored by co-simulation of ADS ...
Hujun Jia +7 more
doaj +3 more sources
A non linear model to analyze the DC performance of SiC MESFET
Ain Shams Engineering Journal, 2022 This paper presents a detailed analytical and non-linear mathematical model describing the I − V characteristics of submicron silicon Carbide (SiC) Metal semiconductor field effect transistor (MESFETs).
Asad Ali +4 more
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4H-SiC MESFET with darin-side and undoped region for modifying charge distribution and high power applications [PDF]
مجله مدل سازی در مهندسی, 2015 In this paper, a novel MESFET with an undoped region (DS-UR) and drain side-double recessed 4H-SiC metal semiconductor field effect transistor (MESFET) is presented.
Ali A. Orouji +2 more
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Фізика і хімія твердого тіла, 2020 In this paper described researched essentials and physical mechanisms of MESFET on epitaxy layers of GaAs with monocrystalline silicon wafer. Conducted computer modeling of MESFET with p-channel: distributions of potential, volumetric charge, current in ...
S. P. Novosyadliy +3 more
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Light effect in photoionization of traps in GaN MESFETs [PDF]
Papers in Physics, 2009 Trapping of hot electron behavior by trap centers located in buffer layer of a wurtzite phase GaN MESFET has been simulated using an ensemble Monte Carlo simulation.
H. Arabshahi, A. Binesh
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Photosensitivity of MESFETs on Epitaxy Layers of GaAs with Monocrystalline Silicon Wafer
Фізика і хімія твердого тіла, 2020 Researched essentials and physical mechanisms which determine photosensitivity of MESFET on epitaxy layers of GaAs with monocrystalline silicon wafer under their illumination in impure zone absorption spectrum.
S. Novosyadly +3 more
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Long-term radiation effects in GaAs microwave devices exposed to pulsed ionizing radiation [PDF]
ITM Web of Conferences, 2019 The investigation results of the GaAs microwave devices characteristics under pulse irradiation are presented. The study covers the field effect transistor with Schottky barrier, pseudomorphic high-electron mobility transistors and resonant tunnelling ...
Gromov Dmitry, Elesin Vadim
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