Results 31 to 40 of about 3,739 (202)
Formation of delta-doped p-layer of hydrogen in natural and CVD-diamond crystals [PDF]
Tekhnologiya i Konstruirovanie v Elektronnoi Apparature, 2011 A method is proposed for the hydrogen heat treatment of natural and CVD-diamond crystals, which can serve as an alternative to conventional method of forming H-layer in microwave plasma of hydrogen as a simpler one and more reproducible.
Altukhov A. A. +5 more
doaj +2 more sources
Advanced Non‐Enzymatic Electrochemical Sensor Materials for Alzheimer's Disease Biomarkers
Analysis &Sensing, Volume 6, Issue 3, May 2026.This review summarizes advances in materials‐driven, non‐enzymatic electrochemical biosensors for early Alzheimer's diagnosis via biofluid analysis. Amyloid‐β and hyperphosphorylated Tau are highlighted alongside sensor performance metrics, including sensitivity and selectivity.
Wei‐Ting Ting +5 more
wiley +1 more source
On the ?-Particle Irradiation Effects in MESFETs
physica status solidi (a), 2000 α-particle irradiation investigations have been carried out on various structure GaAs metal-semiconductor field-effect transistors. The device characteristics were measured before irradiation and after α-particle irradiation with fluences ranging from 5×1010 to 3×1012 cm-2.
Papastamatiou, M +5 more
openaire +2 more sources
Advanced Materials Technologies, Volume 11, Issue 7, 6 April 2026.The 4R principle—Resilience, Repairability, Recyclability, and Renewability—enables sustainable liquid‐metal transistors. LM materials provide stretchable, damage‐tolerant architectures, allow rapid circuit repair, permit full material recovery through dissolution, and support renewable fabrication cycles, forming a closed‐loop pathway toward ...
Elahe Parvini, Abdollah Hajalilou
wiley +1 more source
Photoluminescence Spectra of MESFET and HEMT
Active and Passive Electronic Components, 1995 Photoluminescence spectroscopy has been employed in previous studies of semiconductor quantum wells and of buried interfaces in heterostructures. Nevertheless, the low amplitude of the signals collected, and the experimental difficulties, have limited ...
P. Conti
doaj +1 more source
physica status solidi (b), Volume 263, Issue 4, April 2026.Schematic of a metal‐oxide‐semiconductor field‐effect transistor at pinch‐off together with the channel potential. We revisit the problem of the potential distribution in an inversion channel field effect transistor (metal–oxide‐semiconductor field‐effect transistor) within the gradual channel approximation.
Marius Grundmann
wiley +1 more source
Active and Passive Electronic Components, 2002 In this paper active inductor circuits are employed to assess their suitability for providing a tuning function in GaAs MMIC circuits. The specifications for a mobile handset amplifier and a bandpass filter operating from a 3 V supply rail are used as ...
J. Rodriguez Tellez +2 more
doaj +1 more source
Parameter Extraction Framework for Substrate‐Dependent Compact Models of GaN HEMTs
International Journal of RF and Microwave Computer-Aided Engineering, Volume 2026, Issue 1, 2026.This paper provides a comparative analysis and electrothermal parameter extraction of six compact models: Statz, McCamant, McNally, Memon, Angelov, and Tajima for GaN high electron mobility transistors (HEMTs) fabricated on four different substrate materials: sapphire, silicon (Si), silicon carbide (SiC), and diamond.
Md. Shaheen Mia +5 more
wiley +1 more source
High‐Performance Ultra‐Wide‐Bandgap CaSnO3 Metal‐Oxide‐Semiconductor Field‐Effect Transistors
Advanced Electronic Materials, Volume 11, Issue 19, November 18, 2025.High‐performance enhancement‐mode MOSFET devices made from ultra‐wide bandgap semiconductor CaSnO3 are demonstrated for the first time with an on/off ratio exceeding 108, field‐effect mobility of 8.4 cm2 V−1 s−1, low contact resistance of 0.73 kΩ·µm, and a record breakdown field of ∼8.3 MV cm−1.
Weideng Sun +10 more
wiley +1 more source
Metal-Semiconductor Field-Effect Transistors Fabricated Using DVT Grown n-MoSe2 Crystals With Cu-Schottky Gates [PDF]
Журнал нано- та електронної фізики, 2011 Metal-semiconductor field-effect transistors (MESFETs) based on DVT grown MoSe2 crystals and Cu Schottky gate have been fabricated and studied.
C.K. Sumesh +3 more
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