Results 41 to 50 of about 3,739 (202)
Advances in Materials Science and Engineering, 2014 A crack-free AlGaN/GaN heterostructure was grown on 4-inch Si (111) substrate with initial dot-like AlSiC precoverage layer. It is believed that introducing the AlSiC layer between AlN wetting layer and Si substrate is more effective in obtaining a ...
Jae-Hoon Lee, Jung-Hee Lee
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Thermal Characterization of Ultrawide Bandgap Semiconductor Devices: A Review
Advanced Physics Research, Volume 4, Issue 9, September 2025.This review outlines advanced thermal characterization methods essential for ultrawide bandgap semiconductors like β‐Ga₂O₃, AlN, and diamond. It critically compares optical and electrical techniques, highlights their applications in power and RF systems, and evaluates recent innovations.
Hassan Irshad Bhatti, Xiaohang Li
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Journal of King Saud University: Engineering Sciences, 1998 A high performance long-wavelength interdigitated metal-semiconductor-metal (MSM) photodetectors is reported in this paper. The photoabsorbing layer consists of an InGaAs/GaAs strained layer superlattice designed for light absorption in the long ...
Nacer Debbar
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Analytical Solution to the Gradual Channel Approximation
physica status solidi (b), Volume 262, Issue 9, September 2025.An analytical solution is provided for the potential along the channel for junction and Schottky gate field effect transistors within the Shockley model. The solution is valid for all drain voltages up to the saturation or pinch‐off. The problem of the potential distribution in a field effect transistor within the gradual channel approximation is ...
Marius Grundmann
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Results in EngineeringThis paper investigates the electrical properties of a 0.3 µm channel length Silicon-On-Insulator (SOI) Metal-Semiconductor Field-Effect Transistor (MESFET) with a nickel (Ni) metal region in the buried oxide layer. The simulation was conducted using the
Hamed Mohammadi, Mohsen Hayati
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Functional Diamond, 2022 The irradiation effect of X-ray on the electrical properties of Schottky-barrier diode (SBD) and metal-semiconductor field-effect transistors (MESFET) based on the surface conductivity of hydrogen-terminated single-crystal diamond (SCD) epilayers was ...
Mingchao Yang +5 more
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Fabrication and Characterization of Ga2O3 FinFETs on Patterned Silicon Substrate
Advanced Electronic Materials, Volume 11, Issue 11, July 2025.This study presents a Ga2O3‐based FinFET fabricated on a patterned silicon substrate using ALD. Electrical measurements reveal that post‐deposition annealing at 450 °C significantly improves the device performance, yielding a high Ion/Ioff ratio of 8.3 × 107, enhanced mobility of 8.5 cm2 V−1 s, and a breakdown voltage exceeding 200 V.
Hadi Ebrahimi‐Darkhaneh +4 more
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Radiation Characteristics of 3D Resonant Cavity Antenna with Grid-Oscillator Integrated Inside
International Journal of Antennas and Propagation, 2014 A three-dimensional (3D) rectangular cavity antenna with an aperture size of 80 mm × 80 mm and a length of 16 mm, integrated with a four-MESFET transistor grid-oscillator, is designed and studied experimentally.
L. A. Haralambiev, H. D. Hristov
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Engineering Reports, Volume 7, Issue 6, June 2025.This study explores how bidirectional semiconductor devices, enhanced by wide bandgap materials, significantly improve the efficiency and stability of DC and hybrid microgrids. Key findings demonstrate their potential in optimizing energy management and supporting renewable integration in advanced power systems.
Abdul Waheed +2 more
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Thermal Stability of Schottky Contacts and Rearrangement of Defects in β‐Ga2O3 Crystals
Advanced Electronic Materials, Volume 11, Issue 1, January 2025.This study investigates the thermal stability of various Schottky contacts (Au, Pt, and Ni) on β‐Ga2O3 under a 650 K thermal load. Intermixing of atoms at the interface between metal and β‐Ga2O3 is shown, with Ni oxidizing, and Au and Pt alloying with the Ga.
Palvan Seyidov +9 more
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