Results 61 to 70 of about 3,739 (202)

Dual internal model control with improved load current feedback for enhanced dynamic performance in aircraft high‐voltage direct current brushless generator

IET Electric Power Applications, Volume 18, Issue 10, Page 1174-1186, October 2024.
A dual internal model control method utilising improved load current feedback to enhance the dynamic performance of aircraft HVDC wound rotor synchronous generator system under load variations is proposed. It employs internal model controllers in both voltage and current loops, thereby significantly augmenting the system's disturbance rejection ...
Heng Shi, Zhuoran Zhang
wiley   +1 more source

Failure Analysis of ESD-stressed SiC MESFET

, 2015
International audienceReliability studies are required for SiC device development. In a previous work we studied the intrinsicESD robustness of a SiC MESFET. The failure mechanism was related to the triggering of an NPN parasitictransistor. In this work,
Godignon, Philippe, Trémouilles, David, Phulpin, Tanguy, Tournier, Dominique, Austin, Patrick, Isoird, Karine   +5 more
core   +1 more source

Characterization of the transient behavior of a MESFET [PDF]

, 1994
: Modeling and parameter extraction -- Characterization of the MESFET -- Dc measurements -- Pulsed I-V measurements -- Pulsed RF ...
Borelli, Vesna, Bégin, Michel, Ghannouchi, Fadhel M.   +2 more
core   +1 more source

Performance Evaluation of Nanoscale Single- and Dual-Gate MESFETs Using COMSOL Multiphysics

Journal of ICT Research and Applications
In this work, a comparative numerical simulation of single-gate and double-gate depletion mode GaAs MESFETs in the nanometer domain using COMSOL Multiphysics was carried out.
Odai M. Bakrshoom, Mohammed F. Alharbi, Mohammed S. Nazer, Ahmed M.A.A. Elngar   +3 more
doaj   +1 more source

A triple-oxide SOI-MESFET with enhanced breakdown voltage and power density via buried aluminum engineering

e-Prime: Advances in Electrical Engineering, Electronics and Energy
This study presents a novel triple-oxide SOI-MESFET structure with an engineered aluminum layer in the buried oxide (BOX) to simultaneously enhance breakdown voltage and power density.
Hamed Mohammadi, Mohsen Hayati
doaj   +1 more source

MESFET-based spatial power combiners

, 1994
Design and experimental results for a unit cell incorporating one MESFET is presented.
A. Mortazawi, Ivanov, Toni, T. Ivanov, Mortazawi, Amir, Balasubramaniyan, Arul, A. Balasubramaniyan   +5 more
core   +1 more source

GaAs MESFET: a high-speed optical detector

, 2022
S.193The application of a GaAs MESFET as a high-speed optical detector has been investigated and compared with the result of a fast avalanche photodiode.13Nr.
Walf, G., Baack, C., Elze, G.
core   +1 more source

Green-light switching of Schottky-gated transistors made from phosphorylated cellulose nanofibers [PDF]

AIP Advances
In this study, we investigate the green-light switching effect of Schottky-gated metal–semiconductor field-effect transistors (MESFETs) fabricated using amorphous n-type phosphorylated cellulose nanofibers (PCNFs) with an electric conductivity of 0.61 mS/
Mikio Fukuhara, Tomonori Yokotsuka, Takahito Ono, Koshiro Yaegashi, Masahiko Kumadaki, Nobuhisa Fujima, Kentaro Kishi   +6 more
doaj   +1 more source

A simple broadband MESFET DRO design for millimeter-wave applications [PDF]

, 1990
The development of an hybrid dielectric resonator oscillator (DRO) based on a MMIC MESFET is described. Only one circuit was designed to cover the K band frequency range. A common source topology with series feedback was employed.
Dieudonne, J.M.
core   +1 more source

ANNs in Bias Dependant Small-Signal and Noise Modeling of Microwave FETs [PDF]

Telfor Journal, 2010
In this paper an efficient procedure for determination of small-signal and noise behavior of microwave transistors for various bias conditions is proposed. An empirical transistor noise model based on an equivalent circuit (improvement of Pospieszalski’s
V. Marković, Z. D. Marinković, O. Pronić-Rančić   +2 more
doaj