Results 71 to 80 of about 3,739 (202)
The Effect of Gate Work Function and Electrode Gap on Wide Band-Gap Sn-Doped α-Ga2O3 Metal-Semiconductor Field-Effect Transistors. [PDF]
Materials (Basel), 2022 Ro HS, Kang SH, Jung S.
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Temperature Effects on The Electrical Characteristics of In0.15Ga0.85As Pseudomorphic High-Electron-Mobility Transistors [PDF]
Journal of Electrical and Electronics Engineering, 2017 Nowadays, GaAs-based HEMTs and pseudomorphic HEMTs are speedily replacing conventional MESFET technology in military and commercial applications including, communication, radar and automotive technologies having need of high gain, and low noise figures ...
BECHLAGHEM Fatima Zohra +2 more
doaj
Results in Physics, 2017 In this article, one and two-dimensional hydrodynamical models of semiconductor devices are numerically investigated. The models treat the propagation of electrons in a semiconductor device as the flow of a charged compressible fluid.
Ubaid Ahmed Nisar +2 more
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MESFET GaAs controlado fotónicamente
, 1998 The illumination characteristic of GaAs MESFET has been measured with single optical fiber is reported. This technique permits an optical control and observer the edge-effect in the MESFET planar.
López Higuera, José Miguel +4 more
core
Progress in Gallium Oxide Field-Effect Transistors for High-Power and RF Applications. [PDF]
Materials (Basel), 2023 Maimon O, Li Q.
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Systematic Optimization Technique for MESFET
, 2007 Accurate small and large-signal models of metal-semiconductor field effect transistor (MESFET) devices are essential in all modern microwave and millimeter wave applications. Those models are used for robust designs and fabrication development.
Sedki M. Riad +5 more
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Criterios y métodos de reducción del ruido de fase en osciladores de microondas con MESFET [PDF]
, 1991 This paper gives several building criteria for the design of microwave oscillators with MESFET (MESFET-MWO) in order to achieve low phase noise. From device low frequency noise model and identification of phase noise mechanisms generation and sources in ...
Corbella Sanahuja, Ignasi
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Modeling of transverse propagation delays in a GaAs MESFET
, 1998 A numerical model of the transverse propagation delays in a GaAs MESFET is presented. This model allows for ramp input signals, considers the resistance of the driving source, and includes more accurate values of the MESFET parameters. The model has been
Goel, A. K., Mohun, V. T.
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Special Issue on Miniaturized Transistors, Volume II. [PDF]
Micromachines (Basel), 2022 Filipovic L, Grasser T.
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Microwave GaAs MESFET nonlinearity and large-signal modeling [PDF]
, 1993 The nonlinearity analysis for a 0.5μm gate length microwave GaAs metal-semiconductor field-effect transistor (MESFET) by HP85150B Microwave Design System was investigated.
He, Yan
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