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Değişik mesfet modellerinin karşılaştırılmaları ve değerlendirilmesi
, 2005 There exist various models for Microwave MESFET equivalent circuit representations. These models use different mathematical models to describe the same MESFET and give similar results.
Altay, Mirkan
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Self-Assembled Monolayers: Versatile Uses in Electronic Devices from Gate Dielectrics, Dopants, and Biosensing Linkers. [PDF]
Micromachines (Basel), 2021 Kim S, Yoo H.
europepmc +1 more source
IEEE AccessElectrical degradation in wide-bandgap (WBG) power transistors is typically assessed through measurable electrical parameters such as threshold voltage shift, on-resistance increase, leakage current variation, transconductance degradation, and switching ...
Saif Ur Rahman +4 more
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Editorial for the Special Issue on SiC Based Miniaturized Devices. [PDF]
Micromachines (Basel), 2020 Saddow SE +4 more
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Demonstration of MOCVD-grown Ga2O3 power MOSFETs on sapphire with in-situ Si-doped by tetraethyl orthosilicate (TEOS). [PDF]
Discov Nano, 2023 Ngo ST +5 more
europepmc +1 more source
On-Chip Detection of the Biomarkers for Neurodegenerative Diseases: Technologies and Prospects. [PDF]
Micromachines (Basel), 2020 Song C, Que S, Heimer L, Que L.
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Guangtongxin yanjiu, 2008 文章介绍了一种在无法获取器件大信号模型的情况下采用小信号法设计宽带功率放大器的方法。基于微波砷化镓场效应管,采用小信号设计方法,利用ADS软件,依据宽带功率放大器的各项指标来同步进行电路的设计、优化和仿真,设计出了满足预期期望值的宽带功率放大器。
邢凌燕
doaj
Comparison of gate current of conventional and proposed AlOx-MESFET structure.
Comparison of gate current of conventional and proposed AlOx-MESFET structure.
Ahmad Ghiasi (6572714) +5 more
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Noise parameter extraction of a GaAs MESFET with Monte-Carlo simulation
, 1997 All of the noise parameters of a GaAs metal-semiconductor field-fffect transistor (MESFET) are extracted using 2-dimensional Monte-Carlo simulation for the first time. The general procedure for extracting the noise parameters is presented.
Baek, JY, Kwon, YS, Hong, Songcheol
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Modi e meccanismi di guasto dei MESFET al GaAs
, 1987 This paper is a tutorial on the reliability of microwave semiconductor devices and in particular of GaAs ...
ZANONI, ENRICO, C. Canali, F. Chiussi
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