Results 101 to 110 of about 3,739 (202)

A GaN-HEMT Active Drain-Pumped Mixer for S-Band FMCW Radar Front-End Applications. [PDF]

Sensors (Basel), 2023
Pagnini L, Collodi G, Cidronali A.
europepmc   +1 more source

Influence of Gate Geometry on the Characteristics of AlGaN/GaN Nanochannel HEMTs for High-Linearity Applications. [PDF]

Micromachines (Basel), 2023
Zhang M, Chen Y, Guo S, Lu H, Zhu Q, Mi M, Wu M, Hou B, Yang L, Ma X, Hao Y.   +10 more
europepmc   +1 more source

All-2D vertical metal-semiconductor field-effect transistor with sub-10 nm channel and contact lengths. [PDF]

Nat Commun
Zhang Y, Jia X, Chen J, Li M, Li Y, Dai L.   +5 more
europepmc   +1 more source

Evaluation of breakdown voltage differences between traditional and AlOx-MESFET configurations.

Evaluation of breakdown voltage differences between traditional and AlOx-MESFET configurations.
Ahmad Ghiasi (6572714), Abbas Rezaei (17696798), Lewis Nkenyereye (18452397), Muhammad Akmal Chaudhary (17696792), Maher Assaad (17696795), Fawwaz Hazzazi (11902912)   +5 more
core   +1 more source

Fault interruption scheme for HVDC systems using GaN-HEMT and VCB. [PDF]

J Power Electron
Raza A, Babar MZ, Shahid MU, Gulzar H, Gulzar Z, Rahman SU.   +5 more
europepmc   +1 more source

A Highly Sensitive and Miniature Optical Fiber Sensor for Electromagnetic Pulse Fields. [PDF]

Sensors (Basel), 2021
Zhao M, Zhou X, Chen Y.
europepmc   +1 more source

Criterios y métodos de reducción del ruido de fase en osciladores de microondas con MESFET

This paper gives several building criteria for the design of microwave oscillators with MESFET (MESFET-MWO) in order to achieve low phase noise. From device low frequency noise model and identification of phase noise mechanisms generation and sources in ...
Corbella Sanahuja, Ignasi
core  

Diamond for High-Power, High-Frequency, and Terahertz Plasma Wave Electronics. [PDF]

Nanomaterials (Basel)
Hasan MM, Wang C, Pala N, Shur M.
europepmc   +1 more source