Results 81 to 90 of about 3,739 (202)
III-Vs Review, 1998 AbstractThere is much talk about the continuing dominance of the traditional MESFET in GaAs MMICs. Many industry observers would like to see their predictions fulfilled and this ubiquitous device make way for the HEMT and HBT. Such higher performance discrete devices are now commercially available and some are even in the brochures for several leading ...
openaire +1 more source
Analytical modeling and ion implantation of GaN MESFET using MATLAB [PDF]
, 2011 A device modeling of a metal semiconductor field effect transistor (MESFET) fabricated by diffusion process is developed to characterize the threshold voltage Vr and the drain source current lvs The MESFET differs from the common insulated gate FET in ...
Lu, Honglu
core
RF characteristics of GaAs power MESFET's with superlattice buffer layer
, 2019 A GaAs power MESFET with a GaAs/AlGaAs superlattice buffer layer has been developed for high efficiency and low distortion. The power MESFET has a low-high doped channel structure and it is fabricated using the standard process of GaAs power MESFET.
Mun, JK +4 more
core
Microwave Pioneers: Mau-Chung Frank Chang, “The Power of Connections”
IEEE Journal of MicrowavesWe are pleased to pick up this continuing series on individuals within our community who have made significant impacts in the field of microwaves, and to the world, over the course of their careers.
Peter H. Siegel
doaj +1 more source
State-of-the-Art β-Ga2O3 Field-Effect Transistors for Power Electronics. [PDF]
ACS Omega, 2022 Liu AC +8 more
europepmc +1 more source
A Two-Dimensional (2D) Potential Distribution Model for the Short Gate-Length Ion-Implanted GaAs Mesfets Under Dark and Illuminated Conditions [PDF]
Журнал нано- та електронної фізики, 2011 An analytical 2D model to predict the potential distribution of short-channel ion-implanted GaAs MESFETs has been presented. The 2D potential distribution in the channel of the short-channel device has been obtained by solving the 2D Poisson’s equation ...
Shweta Tripathi, S. Jit
doaj
Journal of Engineering and Sustainable Development, 2009 The aim of this work is the design and analysis of power amplifiers that operate in the microwave band (9-11GHz) within the X-band and used in the terminal stage of solid-state transmitters.
M. S. Abdul-Wahab +2 more
doaj
Gallium arsenide field effect transistors microstrip integrated circuit dielectric resonator oscillators [PDF]
, 1988 Bibliography: leaves 175-177.This thesis is concerned with Gallium Arsenide Metal Semiconductor Field Effect Transistor Microstrip Integrated Circuit Dielectric Resonator Oscillators (GaAs MESFET MIC DROs) - the different types, their design and their ...
Crouch, David Andrew
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Carbon Nanotube and Its Derived Nanomaterials Based High Performance Biosensing Platform. [PDF]
Biosensors (Basel), 2022 Mondal J +7 more
europepmc +1 more source
On The Analysis Of Microwave Mesfet Mixers
, 1991 A new and efficient analysis method for microwave MESFET mixers was developed. The analysis incorporates harmonic balance large‐signal analysis, implemented using robust and fast numerical algorithms, into an extended small‐signal analysis originally ...
Nguyen, Cam, Christodoulou, Chistos
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