Results 51 to 60 of about 3,739 (202)
Физика волновых процессов и радиотехнические системы, 2013 Field and volume charge structure in the junction between semiinsulating chrome doped substrate and n-channel of GaAs MESFET was analyzed by means of a computational modeling. It was used a four-level model of semiinsulating GaAs with deep levels.
A.M. Bobreshov +2 more
doaj
Semiconductor Membrane Exfoliation: Technology and Application
Advanced Electronic Materials, Volume 11, Issue 1, January 2025.This review systematically outlines diverse technical strategies commonly employed by the scientific community to achieve exfoliation‐transfer of semiconductor structures from conventional rigid substrates. Simultaneously, it also highlights the potential of membrane through various exfoliation‐transfer methods in multifunctional (opto)electronic ...
Hongliang Chang +7 more
wiley +1 more source
Recent Advanced Ultra‐Wide Bandgap β‐Ga2O3 Material and Device Technologies
Advanced Electronic Materials, Volume 11, Issue 1, January 2025.The advanced ultra‐wide bandgap semiconductor material β‐Ga2O3 is highly favored for its exceptional material properties. This sudy provides a comprehensive review of its developments in areas such as materials, power devices, and RF devices. The current status of its commercialization process is outlined, along with an analysis of the challenges it is
Sihan Sun +5 more
wiley +1 more source
AlGaN/GaN Dual‐Gate HEMT Using a High Al Mole Fraction and Thin Barrier Layer
Electronics Letters, Volume 61, Issue 1, January/December 2025.This article examines the use of a high Al mole fraction (x = 0.34) and a thin barrier layer (t = 11.5 nm) in AlGaN/GaN high electron mobility transistors (HEMTs) with both single‐gate and dual‐gate configurations. Single‐gate HEMTs with the current epitaxial structure demonstrated an improved maximum drain current and transconductance, as well as ...
Yuji Ando +4 more
wiley +1 more source
A Comparison Between GaAs Mesfet and Si NMOS ESD Behaviour
Active and Passive Electronic Components, 1987 Work is in hand at Loughborough University to investigate and compare the ESD sensitivity of GaAs D-MESFETs and unprotected enhancement mode NMOS structures.
A. J. Franklin +2 more
doaj +1 more source
Recent progress on heteroepitaxial growth of single crystal diamond films
Electron, Volume 2, Issue 4, November 2024.Diamond exhibits exceptional semiconductor properties across diverse applications. Heteroepitaxial growth offers a route to diamond wafers via chemical vapor deposition. By exploiting the lattice matching to minimize interfacial strain, iridium substrates enable scalable growth of high‐quality single‐crystal diamond films suitable for power electronics,
Vedaste Uwihoreye +5 more
wiley +1 more source
A Low-Power Enable/Disable GaAs MESFET Differential Logic
, 2007 In this work, a novel and straightforward Enable/Disable GaAs MESFET Differential Logic (EMDL) structure is presented. EMDL is compatible with DCFL and some reported MESFET differential logic families, like DPTL, DCVS and DC 2 FL.
Mesfet Differential, Ribas Bernal
core
Optically controlled GaAs dual-gate MESFET and permeable base transistors [PDF]
, 1986 Optically induced voltage and dc characteristics of the GaAs Dual-gate MESFET and the Permeable Base Transistor (PBT) with optical illumination at wavelength below 0.87 microns were obtained and compared with GaAs MESFET.
Simons, R. N., Bhasin, K. B.
core
Active inductances controlled in GaAs MESFET technology [PDF]
, 2006 Two new structures of active inductance which implement MESFET transistors are proposed in this article. The technological parameters of the components of “inductances” are those of 0.8 µm MESFET technology.
Benbouza, M.S. +4 more
core +2 more sources
Schottky Diode Leakage Current Fluctuations: Electrostatically Induced Flexoelectricity in Silicon
Advanced Science, Volume 11, Issue 38, October 16, 2024.Electrostatic attractive forces between a Pt atomic force microscopy (AFM) tip and an oxide‐free silicon surface lead to a strain gradient in the semiconductor, which results in a flexoelectric junction voltage. Flexoelectricity increases diode leakage and shifts the Schottky junction knee voltage away from the origin, accounting for parasitic effects ...
Carlos Hurtado +3 more
wiley +1 more source