Results 21 to 30 of about 3,739 (202)
Formation CMOS Schemes on GaAs with Self-Aligned Nitride and Silicide Gates
Фізика і хімія твердого тіла, 2016 Advanced integrated logic circuits on GaAs are mainly based on the using of n-channel field-effect transistors with gate Schottky (MESFET). To create the complementary MESFET integrated circuits the main problem is quite small Schottky barrier height ...
S. P. Novosjadly +2 more
doaj +1 more source
Design and Simulation of Microwave Oscillator [PDF]
Engineering and Technology Journal, 2009 This paper is concerned with the design and simulation of fixed frequency microwaveoscillator. Scattering parameters of the active device (MESFET-Afm02n8b) are used todesign and synthesize the oscillator.
Ahmed H. Reja +2 more
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Polycrystalline diamond normally-off MESFET passivated by a MoO3 layer
Results in Physics, 2021 The normally-off hydrogen-terminated diamond metal–semiconductor field effect transistors (MESFETs) with a MoO3 passivation layer were fabricated on the CVD grown polycrystalline diamond substrate.
Zeyang Ren +7 more
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A Framework for Automatic Generation of Neural Models of Electron Devices
Journal of the ACS Advances in Computer Science, 2007 In this paper a framework for automatic generation of neural network modelsfor the dual-gate MESFET is presented. Values of the large-signal model areextracted from S-parameter measurements at many DC-bias points.
M. Abdeen Abdeen
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Oxygen Plasma Treatment to Enable Indium Oxide MESFET Devices
Advanced Electronic Materials, 2023 Metal‐semiconductor field‐effect transistor (MESFET) devices based on pulsed laser deposition (PLD) grown In2O3 thin films with on–off ratios exceeding 6 orders of magnitude and low sub‐threshold swing values close to the thermodynamic limit are reported.
Fabian Schöppach +3 more
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Materials & Design, 2023 Metal-semiconductor field-effect transistors (MESFETs) offer the advantages of efficient gate control and low power consumption due to the large junction capacitance. However, the strong Fermi-level pinning caused by the metal-induced gap states makes it
Tianjiao Zhang +12 more
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A DC~1.6GHz DISTRIBUTEDAMPLIFIERWITHGaAs MESFETs
, 2016 In this study, a DC ~ 1.6 GHz bandwidth distributed amplifier (DA) is fabricated in printed circuit board (PCB). The scattering (S-) parameters of the distributed amplifier are measured and compared with simulated results. In characterization of the amplifier, small-signal microwave Sparameters given at some discrete frequencies of transistors are ...
Hiçdurmaz, Bahadır, Özzaim, Cengiz
openaire +3 more sources
Fault Interruption Scheme for HVDC System Using SiC-MESFET and VCB Based Hybrid Circuit Breaker
IEEE Access, 2021 As high voltage DC power system is gaining popularity, power electronic switching devices are becoming increasingly advanced to overcome problems of timely fault isolation.
Waheed A. Khan +6 more
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Advanced Materials Technologies, Volume 11, Issue 13, 8 July 2026.This review explores advances in wearable and lab‐on‐chip technologies for breast cancer detection. Covering tactile, thermal, ultrasound, microwave, electrical impedance tomography, electrochemical, microelectromechanical, and optical systems, it highlights innovations in flexible electronics, nanomaterials, and machine learning.
Neshika Wijewardhane +4 more
wiley +1 more source
IEEE Journal of Microwaves, 2021 This article is the second in a continuing series of biographical pieces on individuals who have made significant contributions to microwave science, technology and applications over the course of their careers.
Peter H. Siegel
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