Results 11 to 20 of about 3,739 (202)

A Novel 4H-SiC MESFET with a Heavily Doped Region, a Lightly Doped Region and an Insulated Region [PDF]

Micromachines, 2021
A novel 4H-SiC MESFET was presented, and its direct current (DC), alternating current (AC) characteristics and power added efficiency (PAE) were studied.
Hujun Jia, Mengyu Dong, Xiaowei Wang, Shunwei Zhu, Yintang Yang   +4 more
doaj   +2 more sources

Modified Effective Carrier Density in SOI-MESFET With an Asymmetric Dielectric Trapdoor

IET Circuits, Devices and Systems
In this paper, a new silicon-on-insulator-metal semiconductor field effect transistor (SOI-MESFET) is introduced with improved DC and RF characteristics compared to conventional SOI-MESFETs (C-SOI-MESFETs).
Zohreh Roustaie, Melina Kehtarmanesh, Ali Asghar Orouji   +2 more
doaj   +2 more sources

A Time Delay Neural Network Based Technique for Nonlinear Microwave Device Modeling [PDF]

Micromachines, 2020
This paper presents a nonlinear microwave device modeling technique that is based on time delay neural network (TDNN). The proposed technique can accurately model the nonlinear microwave devices when compared to static neural network modeling method.
Wenyuan Liu, Lin Zhu, Feng Feng, Wei Zhang, Qi-Jun Zhang, Qian Lin, Gaohua Liu   +6 more
doaj   +2 more sources

Designing process and analysis of a new SOI-MESFET structure with enhanced DC and RF characteristics for high-frequency and high-power applications. [PDF]

PLoS ONE
This research introduces a new designing process and analysis of an innovative Silicon-on-Insulator Metal-Semiconductor Field-Effect (SOI MESFET) structure that demonstrates improved DC and RF characteristics.
Ahmad Ghiasi, Lewis Nkenyereye, Fawwaz Hazzazi, Muhammad Akmal Chaudhary, Maher Assaad, Abbas Rezaei   +5 more
doaj   +2 more sources

Versatile Contact Engineering on β‐Ga2O3 Using EGaIn for Schottky Diodes and MESFET Applications

Advanced Electronic Materials
Beta gallium oxide (β‐Ga2O3) has emerged as a promising ultrawide bandgap n‐type semiconductor for large‐area circuit integration and high‐power device applications in the field of 5G and AI technology.
Gyeong Seop Kim, Jin Hyuk Choi, Min‐gu Kim, Ji‐Hoon Kang, Young Tack Lee   +4 more
doaj   +2 more sources

Schottky-gated transistors using chitosan extracted from marine crab [PDF]

Scientific Reports
Amorphous chitosan nanoparticles (AChNPs) are extracted from marine crab shells for use as the active semiconductor material in paper-based electronics.
Mikio Fukuhara, Tomonori Yokotsuka, Nobuyuki Kobayashi, Masahiko Kumadaki, Nobuhisa Fujima, Toshiyuki Hashida   +5 more
doaj   +2 more sources

Hybrid multimodule DC–DC converters accelerated by wide bandgap devices for electric vehicle systems [PDF]

Scientific Reports
In response to the growing demand for fast-charging electric vehicles (EVs), this study presents a novel hybrid multimodule DC–DC converter based on the dual-active bridge (DAB) topology.
Abdul Waheed, Saif ur Rehman, Faisal Alsaif, Shoaib Rauf, Ismail Hossain, Mukesh Pushkarna, Fsaha Mebrahtu Gebru   +6 more
doaj   +2 more sources

Intermodulation distortion performance enhancement of microwave power amplifiers [PDF]

, 2000
This thesis was submitted for the degree of Doctor of Philosophy and awarded by Brunel University.This thesis reports the author's investigation of the effects of the injection of specific signals on the intermodulation distortion performance of ...
Mbabele, M., Mbabele, Modeste
core   +7 more sources

A simple one-dimensional model for the explanation and analysis of GaAs MESFET behavior [PDF]

, 1998
The explanation of GaAs metal-semiconductor field effect transistor (MESFET) operation often involves the use of simplistic analytical formulae, which serve to obscure the more subtle physics of device action.
Baric, Adrijan, McNally, Patrick J.
core   +2 more sources

A P-well GaAs MESFET technology [PDF]

The semiconductor gallium arsenide (GaAs) has many potential advantages over the more widely used semiconductor silicon (Si). These include higher low field mobility, semi-insulating substrates, a direct band-gap, and greater radiation hardness.
Canfield, Philip C.
core   +5 more sources