Results 221 to 230 of about 277,685 (261)

GaAs power MESFET with 41-percent power-added efficiency at 35 GHz

IEEE Electron Device Letters, 1988
A GaAs power MESFET has been optimized for Ka-Band operation. The device has an n/sup +/ ledge channel structure with a 0.25- mu m gate on MBE-grown material. An output power density of 0.71 W/mm was achieved with 5.2-dB gain and 34% power-added efficiency.
B. Kim, M. Wurtele, H.D. Shih, H.Q. Tserng   +3 more
openaire   +1 more source

A 560 mW, 21% power-added efficiency V-band MMIC power amplifier

GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium. 18th Annual Technical Digest 1996, 2002
In this paper we report the development of two V-band MMIC power amplifiers, based on 0.1 mm pseudomorphic HEMT (PHEMT) technology, that significantly advance the state of the art of V-band power MMIC performance. The first, a single-ended design, measures on-wafer 293 mW output power with a record 26% PAE and 9.9 dB power gain at 62.5 GHz.
O.S.A. Tang, K.H.G. Duh, S.M.J. Liu, P.M. Smith, W.F. Kopp, T.J. Rogers, D.J. Pritchard   +6 more
openaire   +1 more source

Quasi-monolithic 4-GHz power amplifiers with 65-percent power-added efficiency

1988., IEEE MTT-S International Microwave Symposium Digest, 2003
A highly miniaturized C-band 1-W GaAs FET amplifier, part of a three-stage power amplifier for communications satellite applications, has been designed, fabricated, and tested. It achieves a maximum power-added efficiency of 65%, and occupies an area of 0.20 by 0.36 inches.
B.D. Geller, P.E. Goettle
openaire   +1 more source

Distributed Power Control for Energy Efficient Routing in Ad Hoc Networks

Wireless Networks, 2004
In this paper, distributed power control is proposed as a means to improve the energy efficiency of routing algorithms in ad hoc networks. Each node in the network estimates the power necessary to reach its own neighbors, and this power estimate is used both for tuning the transmit power (thereby reducing interference and energy consumption) and as the
BERGAMO, PIERPAOLO, MANIEZZO, Daniela, A. TRAVASONI, GIOVANARDI, Alessandra, MAZZINI, Gianluca, ZORZI, Michele   +5 more
openaire   +3 more sources

Design of 60 Ghz CMOS power amplifier to improve power added efficiency

2017 International Conference on Smart grids, Power and Advanced Control Engineering (ICSPACE), 2017
This discourse used 45nm CMOS technology to model a power amplifier of class AB for a Power Added Efficiency (PAE) of 23% and power gain of lOdB at the 60GHz unlicensed band of frequency. This CMOS class-AB Power Amplifier (PA) is one of the important stages to enhance the power output of the transmitter chain.
P. Rakshitha, A. Bindu, B. V. Pavan Kumar, S. B. Rashmi, Siva S. Yellampalli   +4 more
openaire   +1 more source

Power Efficient MAC Protocol for Mobile Ad Hoc Networks

2013
Maximizing throughput and battery power are the key factors to design an efficient power control MAC protocol. Power management in MANET is a critical issue, since these are powered by batteries. It is also due to mobility of MANETs, the size of batteries is of great concerns.
Sohan Kumar Yadav, D. K. Lobiyal
openaire   +1 more source

1.5 V-operation GaAs spike-gate power FET with 65% power-added efficiency

Proceedings of International Electron Devices Meeting, 2002
A GaAs power FET with a spike-gate has been developed for the high efficiency operation under the extremely low voltage supply of 1.5 V. The spike-gate provides both the low on-resistance of 2.2 /spl Omega//mm and the high transconductance of 180 mS/mm without reducing the output impedance nor increasing the gate resistance.
T. Tanaka, H. Furukawa, H. Takenaka, T. Ueda, A. Noma, T. Fukui, K. Tateoka, D. Ueda   +7 more
openaire   +1 more source

Trade off analysis between power-added efficiency and linearity on HBT power amplifier

25th European Microwave Conference, 1995, 1995
Different HBT operating classes have been compared in terms of output power and power-added efficiency using a simulated multiharmonic load-pull type optimization and also in term of linearty measured on hybrid modules. A fully automatic test bench has been developed in order to perform linearity measurements among which Bit Error Rate (BER) and ...
C Pinatel, S Vuye, M. Riet, C Dubon-Chevalier, B Rojat, A Lermoyer   +5 more
openaire   +1 more source

Influence of output impedance on power added efficiency of Si-bipolar power transistors

2000 IEEE MTT-S International Microwave Symposium Digest (Cat. No.00CH37017), 2002
The power added efficiency (PAE) of low voltage RF bipolar power transistors for cellular applications, is carefully analyzed experimentally and theoretically. We found that the transistor with low output capacitance operates in "inverse class AB", which facilitates high efficiencies.
F. van Rijs, R. Dekker, H.A. Visser, H.G.A. Huizing, D. Hartskeerl, P.H.C. Magnee, R. Dondero   +6 more
openaire   +1 more source

Pseudomorphic power HEMT with 53.5% power-added efficiency for 1.9-GHz PHS standards

1996 IEEE MTT-S International Microwave Symposium Digest, 2002
We demonstrate a power-added efficiency of 53.5% at a very low idling current of 13 mA with a drain bias of 3 V in a proposed power amplifier. This amplifier meets the standards for the 1.9 GHz Japanese Personal Handy-phone System (PHS) which requires highly linear amplifiers, and this is the highest power-added efficiency and the lowest idling current
H. Ono, Y. Umemoto, M. Mori, M. Miyazaki, A. Terano, M. Kudo   +5 more
openaire   +1 more source