Results 101 to 110 of about 9,251,093 (173)

Design of a 0.1–16GHz Reconfigurable Ultra-Wideband MMIC Power Amplifier

IEEE Access
This paper proposes a reconfigurable ultra-wideband power amplifier based on reconfigurable technology. The power amplifier consists of a gain module and reconfigurable bias circuits.
Heyang Sun, Jingchang Nan, Jiadong Yu, Rufei Wang   +3 more
doaj   +1 more source

2.4-GHz CMOS Power Amplifier With Common-Mode Self-Rejection Technique to Suppress Even Harmonics

IEEE Access
In this study, we propose a common-mode self-rejection (CMSR) technique to improve the linearity of CMOS differential power amplifiers. The proposed CMSR technique is implemented through a matching network consisting of a Guanella transformer between the
Donghwan Seo, Jaeyong Lee, Jinho Yoo, Seongjin Jang, Changkun Park   +4 more
doaj   +1 more source

56% PAE mm-Wave SiGe BiCMOS Power Amplifier Employing Local Backside Etching

This letter presents a power amplifier (PA) with excellent power-added efficiency (PAE) for millimeter-wave (mm-wave) applications. The high efficiency is achieved by leveraging a local backside etching (LBE) process to enhance the quality factor ( Q ...
Mausolf, Thomas,, Fager, Christian, Malignaggi, Andrea,, Fager, Christian,, Franzese, Aniello, Carta, Corrado,, Franzese, Aniello,, Maletic, Nebojsa, Negra, Renato, Zhou, Han,, Wei, Muh-Dey, Wei, Muh-Dey,, Maletic, Nebojsa,, Malignaggi, Andrea, Mausolf, Thomas, Zhou, Han, Hasan, Raqibul,, Sutbas, Batuhan, Hasan, Raqibul, Carta, Corrado, Sutbas, Batuhan,, Negra, Renato,   +21 more
core   +1 more source

A Watt-Level 4G LTE CMOS Reconfigurable Power Amplifier with Efficiency Enhancement in Power Back-Off

, 2017
International audienceThis paper presents a reconfigurable two-stage power amplifier (PA) for use in 4G LTE unmanned aerial vehicle (UAV) applications. The PA using the TSMC bulk 65-nm CMOS process exhibits a saturated output power of 29.8 dBm, a power ...
Marie Pham, Jean, Luong, Quang Giap, Medrel, Pierre, Kerherve, Eric   +3 more
core   +2 more sources

A high efficiency class-F power amplifier design technique

In this article, a medium power pseudomorphic HEMT device is used in the design of a high efficiency class-F power amplifier (PA) operating at 900 MHz. The. purpose of this,article is to describe the design procedure of a class-F PA with a very low drain
Ooi SF, Smith D, Sambell A, Butterworth P, Gao S   +4 more
core   +4 more sources

PAE Enhancement Methodology for SiGe Power Amplifier in UMTS/W-CDMA Systems

, 2006
This paper demonstrates an integrated two-stage 1.95 GHz UMTS/W-CDMA handset RF Reconfigurable Power Amplifier (PA) implemented in a 0.25µm SiGe BiCMOS technology from ST Microelectronics. By acting on bias circuits, a dynamic control of 1 dB compression
Jarry, Pierre, Henry, Deltimple, Nathalie, Deval, Yann, Belot, Didier, Kerherve, Eric   +4 more
core  

AIGaN/GaN HEMTs Power Amplifier MIC with Power Combining at C-Band

, 2007
A power amplifier MIC with power combining based on AlGaN/GaN HEMTs was fabricated and measured. The amplifier consists of four 10×120μm transistors. A Wilkinson splitters and combining were used to divide and combine the power.
Yao Xiaojiang, Li Bin, Liu Guoguo, Luo Weijun, Liu Xinyu, Chen Yanhu, Wei Ke, WANG Xiaoliang, Li Chengzhan, Chen Xiaojuan, Liu Dan   +10 more
core  

6-18 GHz High-Efficiency Power Amplifier MMIC Based on Broadband Impedance Matching. [PDF]

Micromachines (Basel)
Liu S, Ma X, Zhang Y, Bian Z, Xu C.
europepmc   +1 more source

High-Efficiency Sub-100 nm Gate GaN HEMTs Enabled by Two-Step SiN_x Layer Etching Technique. [PDF]

Micromachines (Basel)
Cao X, Wang P, Mi M, Liu X, Xiao D, Du X, Lu M, Chen F, Huang Z, Yao J, Liang Y, Cui K, Ma X, Hao Y.   +13 more
europepmc   +1 more source

A Ku-Band 13 W GaN HEMT Power Amplifier MMIC with a Coupled-Line Interstage Stabilization Technique for Radar Sensor Systems. [PDF]

Sensors (Basel)
Kim J.
europepmc   +1 more source