Results 151 to 160 of about 9,251,093 (173)

Ka-Band Doherty Power Amplifier With 26.9 dBm Output Power, 42% Peak PAE and 32% Back-Off PAE Using GaAs PHEMTS [PDF]

open access: yesIET Microwaves, Antennas and Propagation, 2016
The authors present the design and development of a two stage Doherty power amplifier (DPA) in the Ka-band. The amplifier is fabricated in a 0.15-μm gallium arsenide (GaAs) pseudomorphic high electron mobility transistor (pHEMT) process.
Anh-Vũ Pham
exaly   +2 more sources
Some of the next articles are maybe not open access.

Related searches:

A 13.56MHz class e power amplifier for inductively coupled DC supply with 95% power added efficiency (PAE)

2015 International EURASIP Workshop on RFID Technology (EURFID), 2015
Recent development of GaN power transistors with blocking voltages up to 650V enables novel power electronics applications with outstanding performance in high-frequency operation. This paper demonstrates a class E power amplifier with 13.56MHz switching frequency for inductively coupled DC power supplies.
Franz Johann Stubenrauch   +4 more
openaire   +2 more sources

Effects of Output Harmonic Termination on PAE and Output Power of AlGaN/GaN HEMT Power Amplifier

open access: yesIEEE Microwave and Wireless Components Letters, 2002
This letter experimentally investigates and discusses the effects of output harmonic termination on power added efficiency (PAE) and output power of an AlGaN/GaN high electron mobility transistor (HEMT) power amplifier (PA).
K L Wang, S Cai, Y Chung
exaly   +1 more source

High-Efficiency Moderate-Power Amplifier Using Packaged GaN Transistor With Improved Average PAE and Gain for Batteryless IoT Applications

IEEE Transactions on Microwave Theory and Techniques, 2023
Ke Wu, Xiaoqiang Gu, Virgilio Almeida
exaly  

Home - About - Disclaimer - Privacy