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Modeling of Multi-Cell HBT Device Based on Device Structure. [PDF]

open access: yesMicromachines (Basel)
Zhao H   +5 more
europepmc   +1 more source

Atomically accurate de novo design of antibodies with RFdiffusion. [PDF]

open access: yesNature
Bennett NR   +31 more
europepmc   +1 more source

3.3-4.3 GHz efficient continuous class-F gallium nitride power amplifier based on simplified real frequency technique and harmonic tuning. [PDF]

open access: yesPLoS One
Sadeque MG   +7 more
europepmc   +1 more source

Long-Distance Passive Sensing Tag Design Based on Multi-Source Energy Harvesting and Reflection Amplification. [PDF]

open access: yesMicromachines (Basel)
Li G   +9 more
europepmc   +1 more source
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A 13.56MHz class e power amplifier for inductively coupled DC supply with 95% power added efficiency (PAE)

2015 International EURASIP Workshop on RFID Technology (EURFID), 2015
Recent development of GaN power transistors with blocking voltages up to 650V enables novel power electronics applications with outstanding performance in high-frequency operation. This paper demonstrates a class E power amplifier with 13.56MHz switching frequency for inductively coupled DC power supplies.
F. Stubenrauch   +4 more
openaire   +1 more source

A 2–10-GHz Reconfigurable GaN Power Amplifier With Average Power-Added Efficiency of 30% and Output Power of 2 W

IEEE Transactions on Circuits and Systems II: Express Briefs, 2023
Xiao Sun, Xu Zhu, Huaizong Shao
exaly  

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