Development of Efficient High Power Amplifier With More Than an Octave Bandwidth
IEEE Access, 2018 This paper presents a design of a GaN HEMT-based power amplifier (PA), with enhanced efficiency and linearity over the operation band from 0.5 to 1.5 GHz. The design is based on wideband load-pull and source-pull analysis.
Waqar Ahmad Malik +2 more
doaj +1 more source
Design of a Doherty Power Amplifier for GSM Systems
Tikrit Journal of Engineering Sciences, 2011 This paper presents the design and analysis of Doherty power amplifier. The Doherty amplifier is used in a base station for mobile system because of its high efficiency.
Saad Wasmi Osman Luhaib
doaj +1 more source
Digital Predistortion for High Efficiency Power Amplifier Architectures Using a Dual-input Modeling Approach [PDF]
, 2012 In this paper, a novel model is proposed for dual-input high efficiency power amplifier (PA) architectures, such as envelope tracking (ET) and varactor-based dynamic load modulation (DLM).
Cao, Haiying +4 more
core +1 more source
BRAIN‐online: An online cognitive and behavioral screening tool for fetal alcohol spectrum disorders [PDF]
Alcohol Clin Exp Res (Hoboken)Fetal alcohol spectrum disorders (FASD) are among the most common developmental disorders but are underdiagnosed because of the inaccessibility of valid screening tools. We describe BRAIN‐online, an accessible, web‐based, at‐home test that distinguishes individuals at risk for FASD with a high degree of accuracy (accuracy = 80%, sensitivity = 79 ...
Mattson S +7 more
europepmc +2 more sources
Octave bandwidth S- and C-band GaN-HEMT power amplifiers for future 5G communication [PDF]
, 2018 Dieser Beitrag ist mit Zustimmung des Rechteinhabers aufgrund einer (DFG geförderten) Allianz- bzw. Nationallizenz frei zugänglich.This publication is with permission of the rights owner freely accessible due to an Alliance licence and a national licence
Böck, Georg +4 more
core +1 more source
IET Circuits, Devices and Systems, 2023 A power amplifier design operating at 28 GHz for communication applications is presented in this paper. Analog predistorted technique is used to improve the linearity using a cold mode MOSFET linearizer.
N. A. Quadir +4 more
doaj +1 more source
Digital Detection of Oxide Breakdown and Life-Time Extension in Submicron CMOS Technology [PDF]
, 2008 An approach is introduced to extend the lifetime of high-voltage analog circuits in CMOS technologies based on redundancy, like that known for DRAMS. A large power transistor is segmented into N smaller ones in parallel. If a sub-transistor is broken, it
Acar, M., Annema, A.-J., Nauta, B.
core +3 more sources
Highly Integrated, Very High Gain 20Watt X-Band SSPA in GaN Technology [PDF]
Radioengineering, 2022 This paper shows design and development of a highly integrated solid state power amplifier (SSPA) operating in X-Band. The last amplifying stage is realized in GaN technology.
P. Kant, J.J. Michalski
doaj
Increasing the talk-time of mobile radios with efficient linear transmitter architectures [PDF]
, 2000 In order to meet the linearity specification of standards such as GSM EDGE and TETRA the power amplifier (PA) linearisation methods in common usage today result in low DC to RF efficiency (e.g. Cartesian loop and adaptive predistortion).
Beach, MA +3 more
core +2 more sources
A Novel 4H-SiC MESFET with a Heavily Doped Region, a Lightly Doped Region and an Insulated Region
Micromachines, 2021 A novel 4H-SiC MESFET was presented, and its direct current (DC), alternating current (AC) characteristics and power added efficiency (PAE) were studied.
Hujun Jia +4 more
doaj +1 more source