Results 11 to 20 of about 12,139 (192)
Improved DRUS 4H-SiC MESFET with High Power Added Efficiency
Micromachines, 2019 A 4H-SiC metal semiconductor field effect transistor (MESFET) with layered doping and undoped space regions (LDUS-MESFET) is proposed and simulated by ADS and ISE-TCAD software in this paper.
Hujun Jia +7 more
doaj +1 more source
IET Microwaves, Antennas & Propagation, 2008 The design and linearisation techniques for a highly efficient but nonlinear Class-E power amplifier (PA) applied to linear RF transmitters are presented. A hybrid quadrature polar modulator (HQPM) is proposed to linearise the Class-E PA. To accomplish this HQPM-based transmitter, the Class-E PA is designed with a consideration of finite DC-feed ...
C.-J. Li +5 more
openaire +1 more source
Fully integrated CMOS power amplifier design using the distributed active-transformer architecture [PDF]
, 2002 A novel on-chip impedance matching and power-combining method, the distributed active transformer is presented. It combines several low-voltage push-pull amplifiers efficiently with their outputs in series to produce a larger output power while ...
Aoki, Ichiro +3 more
core +1 more source
Analysis and Design of CMOS Doherty Power Amplifier Based on Voltage Combining Method
IEEE Access, 2017 The impedance at the each input terminal of paper presents a voltage combining Doherty power amplifier in a standard 180-nm CMOS process. This Doherty PA uses a series combining transformer (SCT) to combine the output power and realize the load ...
Chenxi Zhao +3 more
doaj +1 more source
A 5.8 GHz 1.8 V +20 dBm 32.5% PAE Power Amplifier for a Short-Range Over-the-Air WPT Application
Sensors, 2023 This paper presents a 5.8 GHz differential cascode power amplifier for an over-the-air wireless power transfer application. Over-the-air wireless power transfer provides a variety of benefits in several applications such as the Internet of Things and ...
Myonggwan Kim +8 more
doaj +1 more source
Design and Simulation for a High-efficiency Class-B Power Amplifier
MATEC Web of Conferences, 2017 A class-B power amplifier with high output power and high power added efficiency (PAE) is designed in this paper. Based on the ADS tools of load-pull and source-pull, the optimal load impedance and source impedance can be obtained, respectively.
Jiang Wei, Lin Qian, Wu Haifeng
doaj +1 more source
Design of Multioctave High-Efficiency Power Amplifiers Using Stochastic Reduced Order Models [PDF]
, 2017 This paper presents a novel general design method of frequency varying impedance matching. The method is applied to design of a broadband high-efficiency power amplifier (PA).
Chen, A +5 more
core +2 more sources
Improved MRD 4H-SiC MESFET with High Power Added Efficiency
Micromachines, 2019 An improved multi-recessed double-recessed p-buffer layer 4H–SiC metal semiconductor field effect transistor (IMRD 4H-SiC MESFET) with high power added efficiency is proposed and studied by co-simulation of advanced design system (ADS) and technology ...
Shunwei Zhu +6 more
doaj +1 more source
A Wideband 77-GHz, 17.5-dBm Fully Integrated Power Amplifier in Silicon [PDF]
, 2006 A 77-GHz, +17.5 dBm power amplifier (PA) with fully integrated 50-Ω input and output matching and fabricated in a 0.12-µm SiGe BiCMOS process is presented.
Hajimiri, Ali, Komijani, Abbas
core +1 more source
Development of Efficient High Power Amplifier With More Than an Octave Bandwidth
IEEE Access, 2018 This paper presents a design of a GaN HEMT-based power amplifier (PA), with enhanced efficiency and linearity over the operation band from 0.5 to 1.5 GHz. The design is based on wideband load-pull and source-pull analysis.
Waqar Ahmad Malik +2 more
doaj +1 more source