Improved MRD 4H-SiC MESFET with High Power Added Efficiency
Micromachines, 2019 An improved multi-recessed double-recessed p-buffer layer 4H–SiC metal semiconductor field effect transistor (IMRD 4H-SiC MESFET) with high power added efficiency is proposed and studied by co-simulation of advanced design system (ADS) and technology ...
Shunwei Zhu +6 more
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Design and Simulation for a High-efficiency Class-B Power Amplifier [PDF]
MATEC Web of Conferences, 2017 A class-B power amplifier with high output power and high power added efficiency (PAE) is designed in this paper. Based on the ADS tools of load-pull and source-pull, the optimal load impedance and source impedance can be obtained, respectively.
Jiang Wei, Lin Qian, Wu Haifeng
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Ultra Wideband High-Efficiency High-Power Amplifier Design by Simplified Output Matching Technique
ElectricaThis paper presents the design of a Gallium Nitride (GaN) transistor-based ultra-wideband (UWB) high-efficiency power amplifier (PA) with 25W (44 dBm) output power operating in the 2–6 GHz frequency band. The design of the matching circuits is based on a
Engin Çağdaş +2 more
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A 10-W GaN on SiC CPW MMIC High-Power Amplifier With 44.53% PAE for X-Band AESA Radar Applications
ElectricaThis article presents a novel X-band gallium nitride (GaN) on silicon carbide (SiC) co-planar waveguide (CPW) monolithic microwave integrated circuit (MMIC) highpower amplifier (HPA) design for radar applications. In design, 0.25 μm γ-shape gate and high
Galip Orkun Arıcan +1 more
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AlGaN/GaN-HEMT power amplifiers with optimized power-added efficiency for X-band applications [PDF]
, 2011 This work has arisen out of the strong demand for a superior power-added efficiency (PAE) of AlGaN/GaN high electron mobility transistor (HEMT) high-power amplifiers (HPAs) that are part of any advanced wireless multifunctional RF-system with limited ...
Kühn, Jutta
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Analysis and Design of CMOS Doherty Power Amplifier Based on Voltage Combining Method
IEEE Access, 2017 The impedance at the each input terminal of paper presents a voltage combining Doherty power amplifier in a standard 180-nm CMOS process. This Doherty PA uses a series combining transformer (SCT) to combine the output power and realize the load ...
Chenxi Zhao +3 more
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A PAE-Controlled Wideband Power Amplifier for Sub-6GHz 5G Applications in 28nm FDSOI Technology
, 2022 A wideband Power Amplifier (PA) with controlled efficiency based on the second harmonic matching and designed in 28nm FDSOI technology is proposed in this paper.
KERHERVE, Eric +5 more
core +1 more source
A 5.8 GHz 1.8 V +20 dBm 32.5% PAE Power Amplifier for a Short-Range Over-the-Air WPT Application
Sensors, 2023 This paper presents a 5.8 GHz differential cascode power amplifier for an over-the-air wireless power transfer application. Over-the-air wireless power transfer provides a variety of benefits in several applications such as the Internet of Things and ...
Myonggwan Kim +8 more
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A D-Band Power Amplifier with 12dBm P1dB, 10% Power Added Efficiency in InP-DHBT Technology
, 2022 This paper presents a D-band power amplifier (PA) using 800 nm InP-DHBT technology. It consists of a driver stage with a 2-way combined cascade unit power cell. Measurements show 12 dB small signal gain.
Heinrich, W. +15 more
core +1 more source
Development of Efficient High Power Amplifier With More Than an Octave Bandwidth
IEEE Access, 2018 This paper presents a design of a GaN HEMT-based power amplifier (PA), with enhanced efficiency and linearity over the operation band from 0.5 to 1.5 GHz. The design is based on wideband load-pull and source-pull analysis.
Waqar Ahmad Malik +2 more
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