Results 21 to 30 of about 12,139 (192)
Octave bandwidth S- and C-band GaN-HEMT power amplifiers for future 5G communication [PDF]
, 2018 Dieser Beitrag ist mit Zustimmung des Rechteinhabers aufgrund einer (DFG geförderten) Allianz- bzw. Nationallizenz frei zugänglich.This publication is with permission of the rights owner freely accessible due to an Alliance licence and a national licence
Böck, Georg +4 more
core +1 more source
Design of a Doherty Power Amplifier for GSM Systems
Tikrit Journal of Engineering Sciences, 2011 This paper presents the design and analysis of Doherty power amplifier. The Doherty amplifier is used in a base station for mobile system because of its high efficiency.
Saad Wasmi Osman Luhaib
doaj +1 more source
The Class-E/F Family of ZVS Switching Amplifiers [PDF]
, 2003 A new family of switching amplifiers, each member having some of the features of both class E and inverse F, is introduced. These class-E/F amplifiers have class-E features such as incorporation of the transistor parasitic capacitance into the circuit ...
Aoki, Ichiro +3 more
core +1 more source
Increasing the talk-time of mobile radios with efficient linear transmitter architectures [PDF]
, 2000 In order to meet the linearity specification of standards such as GSM EDGE and TETRA the power amplifier (PA) linearisation methods in common usage today result in low DC to RF efficiency (e.g. Cartesian loop and adaptive predistortion).
Beach, MA +3 more
core +2 more sources
IET Circuits, Devices and Systems, 2023 A power amplifier design operating at 28 GHz for communication applications is presented in this paper. Analog predistorted technique is used to improve the linearity using a cold mode MOSFET linearizer.
N. A. Quadir +4 more
doaj +1 more source
Digital Detection of Oxide Breakdown and Life-Time Extension in Submicron CMOS Technology [PDF]
, 2008 An approach is introduced to extend the lifetime of high-voltage analog circuits in CMOS technologies based on redundancy, like that known for DRAMS. A large power transistor is segmented into N smaller ones in parallel. If a sub-transistor is broken, it
Acar, M., Annema, A.-J., Nauta, B.
core +3 more sources
Comparative analysis of VDMOS/LDMOS power transistors for RF amplifiers [PDF]
, 2009 A comparison between the RF performance of vertical and lateral power MOSFETs is presented. The role of each parasitic parameter in the assessment of the power gain, 1-dB compression point, efficiency, stability, and output matching is evaluated ...
Chevaux, N., De Souza, M.M.
core +1 more source
Highly Integrated, Very High Gain 20Watt X-Band SSPA in GaN Technology [PDF]
Radioengineering, 2022 This paper shows design and development of a highly integrated solid state power amplifier (SSPA) operating in X-Band. The last amplifying stage is realized in GaN technology.
P. Kant, J.J. Michalski
doaj
Envelope tracking of a radio frequency amplifier for Long Term Evolution using a three-level class-G modulator [PDF]
, 2013 In this contribution, efficiency enhancement of a radio frequency (RF) power amplifier (PA) for Long Term Evolution (LTE) base stations using envelope tracking is investigated. The dynamically adapted drain bias voltage is provided by a three-level class-
A. Bräckle +4 more
core +1 more source
A Fully-Integrated Quad-Band GSM/GPRS CMOS Power Amplifier [PDF]
, 2008 Concentric distributed active transformers (DAT) are used to implement a fully-integrated quad-band power amplifier (PA) in a standard 130 nm CMOS process.
Aoki, Ichiro +8 more
core +1 more source