Results 21 to 30 of about 9,251,093 (173)
High-Gain Over 30% PAE Power Amplifier MMICs in 100 nm GaN Technology at Ka-Band Frequencies
, 2015 International audienceTwo high-efficiency power amplifier MMICs utilizing a 100 nm AlGaN/GaN HEMT MMIC technology at Ka-band frequencies are reported in this paper. They have also been designed in order to ensure high output power and high gain.
M. Campovecchio +16 more
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A L-BAND 50-WATT GaAs Power FET with 58% power added efficiency [PDF]
, 2000 High efficiency 50W GaAs power device h s been developed using two high bre kdown voltage G As FET chips that have an AlGaAs/GaAs heterostructure.Circuit designing considerations include the termination of the second-harmonics for improved power added ...
Ui, Norihiko +3 more
core +1 more source
A 3.5 GHz High Efficiency Doherty GaN Power Amplifier for 5G Applications [PDF]
EPJ Web of ConferencesIn this paper, 3.5 GHz power amplifier (PA) for 5G-NR n78 band base stations has been designed and co-simulated. The PA is realized with the Doherty method using Wolfspeed CGHV35120F GaN HEMT on an FR4 substrate.
Elmouftih Abderrahim +2 more
doaj +1 more source
, 2023 We demonstrate the efficiency and linearity improvement of an E-band GaAs power amplifier (PA) through dynamic gate modulation. By optimizing the coefficients of the linear power tracking gate modulation function, we enhance the output power at the ...
Kaval, Göksu, +3 more
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Design of a Doherty Power Amplifier for GSM Systems
Tikrit Journal of Engineering Sciences, 2011 This paper presents the design and analysis of Doherty power amplifier. The Doherty amplifier is used in a base station for mobile system because of its high efficiency.
Saad Wasmi Osman Luhaib
doaj +1 more source
C-band 10-Watt HBT High-power Amplifier with 50% PAE [PDF]
, 2001 The design and measurement of a C-band HBT high-power amplifier (HPA) is discussed. The amplifier is realised in the HB20P power HBT process of UMS. The HPA combines a high average output power of 9 Watt with both a high gain of 21.6 dB and a high power ...
de Boer, A., de Hek, A.P., Svensson, T.
core +1 more source
, 2008 This paper highlights the achievement of constant efficiency (power added efficiency, PAE) across wide output power levels for fixed amplitude constant envelope modulation.
Limiti, E +11 more
core +5 more sources
Highly Integrated, Very High Gain 20Watt X-Band SSPA in GaN Technology [PDF]
Radioengineering, 2022 This paper shows design and development of a highly integrated solid state power amplifier (SSPA) operating in X-Band. The last amplifying stage is realized in GaN technology.
P. Kant, J.J. Michalski
doaj
IET Circuits, Devices and Systems, 2023 A power amplifier design operating at 28 GHz for communication applications is presented in this paper. Analog predistorted technique is used to improve the linearity using a cold mode MOSFET linearizer.
N. A. Quadir +4 more
doaj +1 more source
A Transformer-Based Dual-Mode Ka-Band CMOS Power Amplifier With Enhanced Back-Off Efficiency
IEEE Journal of MicrowavesThis paper presents the differential-to-single-ended load-modulated (DISEL)-power amplifier, a transformer-based dual-mode Ka-band CMOS power amplifier designed to enhance power-added efficiency (PAE) under output back-off conditions while maintaining ...
Hyunsoo Kim, Jaeyong Lee, Changkun Park
doaj +1 more source