Results 111 to 120 of about 70,463 (263)

A 6-18 GHz High-Efficiency GaN Power Amplifier Using Transistor Stacking and Reactive Matching. [PDF]

Micromachines (Basel)
Wang C, Liao X, Gong M, Xiao F, Guan H, Zhang F, Zhou D.   +6 more
europepmc   +1 more source

A Ku-Band Broadband Stacked FET Power Amplifier Using 0.15 μm GaAs pHEMT. [PDF]

Micromachines (Basel), 2023
Li J, Yuan Y, Yuan B, Fan J, Zeng J, Yu Z.   +5 more
europepmc   +1 more source

Continuous Stiffness Graded Metal–Ceramic Femoral Stems: UMAT‐Based Design and Finite Element Assessment

Advanced Engineering Materials, EarlyView.
Functionally graded metal–ceramic femoral stems are engineered through continuous UMAT‐based stiffness tailoring, eliminating discrete material interfaces while enhancing biomechanical compatibility. Low‐index power‐law gradation optimizes load transfer, reduces stress shielding, and controls implant–bone micromotion, highlighting a materials‐design ...
Rihem Nouira, Sameh Elleuch, Hanen Jrad
wiley   +1 more source

Multi-Objective Optimization Design of Doherty Power Amplifier Circuits Based on Non-Dominated Sorting Genetic Algorithm-II. [PDF]

Micromachines (Basel)
Qu H, Zhang X, Gao S, Yan S.
europepmc   +1 more source

A Dual Load-Modulated Doherty Power Amplifier Design Method for Improving Power Back-Off Efficiency. [PDF]

Sensors (Basel), 2023
Jin Y, Dai Z, Ran X, Xu C, Li M.
europepmc   +1 more source

Model‐Guided Design of Paper Membrane Architectures for Controlled Flow and Enhanced Diagnostic Sensitivity

Advanced Engineering Materials, EarlyView.
Geometrical modifications on nitrocellulose membranes can result in observable differences in signal intensity relative to a reference membrane (top and bottom left). Using two reference experiments, we have developed a theoretical model that can reproduce the experimentally observed flow changes and provide information on membrane parameters, e.g ...
Maria Dimaki, Lea Holritz, Winnie E. Svendsen   +2 more
wiley   +1 more source

A Low-Cost and Compact High-Frequency Gallium Nitride Gradient Power Amplifier for Low-Field MRI. [PDF]

Magn Reson Med
Bolding NR, Hannan J, Vaughn C, Patel A, Lin S, Sun JEP, Grissom W, Griswold MA.   +7 more
europepmc   +1 more source

Design and fabrication of a GaN HEMT power amplifier based on hidden Markov model for wireless applications. [PDF]

PLoS One, 2023
Soruri M, Razavi SM, Forouzanfar M, Colantonio P.   +3 more
europepmc   +1 more source

Intermediate Resistive State in Wafer‐Scale Vertical MoS2 Memristors Through Lateral Silver Filament Growth for Artificial Synapse Applications

Advanced Functional Materials, EarlyView.
In MOCVD MoS2 memristors, a current compliance‐regulated Ag filament mechanism is revealed. The filament ruptures spontaneously during volatile switching, while subsequent growth proceeds vertically through the MoS2 layers and then laterally along the van der Waals gaps during nonvolatile switching.
Yuan Fa, Milan Buttberg, Ke Ran, Rana Walied Ahmad, Dennis Braun, Lukas Völkel, Jimin Lee, Sofía Cruces, Bart Macco, Bárbara Canto, Holger Lerch, Thorsten Wahlbrink, Holger Kalisch, Michael Heuken, Andrei Vescan, Joachim Mayer, Zhenxing Wang, Ilia Valov, Stephan Menzel, Max C. Lemme   +19 more
wiley   +1 more source

A Ku-Band 13 W GaN HEMT Power Amplifier MMIC with a Coupled-Line Interstage Stabilization Technique for Radar Sensor Systems. [PDF]

Sensors (Basel)
Kim J.
europepmc   +1 more source